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    2N6051 Price and Stock

    Microchip Technology Inc 2N6051

    PNP POWER TRANSISTOR SILICON AMP
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    Microchip Technology Inc JAN2N6051

    TRANS PNP DARL 80V 12A TO3
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    Microchip Technology Inc JANTX2N6051

    TRANS PNP DARL 80V 12A TO204AA
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    Microchip Technology Inc JANTXV2N6051

    TRANS PNP DARL 80V 12A TO3
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    Central Semiconductor Corp 2N6051

    Trans Darlington PNP 80V 12A 2-Pin TO-3 Bag - Rail/Tube (Alt: 2N6051)
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    2N6051 Datasheets (47)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6051 Comset Semiconductors Power Complementary Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6051 Microsemi PNP Darlington Power Silicon Transistor Original PDF
    2N6051 Motorola Darlington Complementary Silicon Power Transistor - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6051 Semelab Bipolar PNP Device in a Hermetically Sealed TO3 Metal Package - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6051 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6051 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6051 Central Semiconductor Darlington Bipolar Transistor, PNP, 80V at Tc=25C, TO-3, 2-Pin - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6051 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6051 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6051 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6051 General Electric 12A P-N-P monolithic darlington power transistor. - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6051 LAMBDA Semiconductor Data Book V1 1988 Scan PDF
    2N6051 Mospec POWER TRANSISTORS(12A,150W) - Pol=PNP / Pkg=TO3 / Vceo=80 / Ic=12 / Hfe=750-12k / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6051 Motorola The European Selection Data Book 1976 Scan PDF
    2N6051 Motorola Power Transistor Selection Guide Scan PDF
    2N6051 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6051 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6051 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6051 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6051 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    2N6051 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6050

    Abstract: 2N6057 2N6052 2N6058 2N6051 2N6059
    Text: POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency switching applications. The complementary NPN types are


    Original     		PDF 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6051 2N6058 2N6050 2N6057

    2N6052

    Abstract: 2N6051 1000C 100C JANTX 2N6052
    Text: TECHNICAL DATA PNP DARLINGTON POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/501 Devices Qualified Level 2N6051 JAN JANTX JANTXV 2N6052 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF MIL-PRF-19500/501 2N6051 2N6052 1000C O-204AA) 2N6052 2N6051 1000C 100C JANTX 2N6052

    Untitled

    Abstract: No abstract text available
    Text: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6051 O204AA) 16-Jul-02

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224

    2n6050

    Abstract: 2n6057 2N6052
    Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050,

    2N6051

    Abstract: No abstract text available
    Text: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6051 O204AA) 31-Jul-02 2N6051

    Untitled

    Abstract: No abstract text available
    Text: 2N6051 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6051 O204AA) 18-Jun-02

    2N6052

    Abstract: 1000C 100C 2N6051
    Text: TECHNICAL DATA 2N6051 JAN, JTX, JTXV 2N6052 JAN, JTX, JTXV Processed per MIL-PRF-19500/501 PNP DARLINGTON POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current


    Original     		PDF 2N6051 2N6052 MIL-PRF-19500/501 1000C 2N6051 2N6052 O-204AA) 1000C 100C

    2N6050

    Abstract: 2N6057 2N6052 2N6051 2N6059 2N6058
    Text: 2N6050/51/52 2N6057/58/59 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n n n n 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES HIGH GAIN HIGH CURRENT HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic


    Original     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058

    Untitled

    Abstract: No abstract text available
    Text: Bipolar Darlington Transistors Page 1 of 2 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE (min/max @ A/V) VCE(sat)@ IC/IB (V@A/A) COB pF fT MHZ PNP TO-3/204AA 2N6050 60 12 750/18000@6/3 2.0@6/.024 500 4.0 PNP TO-3/204AA 2N6051 * 80


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6282 2N6283 2N6284 2N6285

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    BU406O

    Abstract: 2N5876 bu409
    Text: EPITAXIAL BASE TO-3 continued Vc»o (V ) V -1o lc (V ) (A ) <W) 1 0 0 /8 0 80 60 10 7 115 80 7 115 3 /2 35 0 .5 /4 35 0 .5 /4 60 10 150 20 80 80 150 2N 6053 2N 6054 60 80 60 80 10 8 100 20 750 8 100 2N 6050 60 60 12 2N6051 2N 6052 80 80 12 100 100 12 NPN


    OCR Scan     		PDF 2N5871 2N6051 T0-220 BU406O 2N5876 bu409

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR VcEO sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051A 80 2N6052A PACKAGE DEVICE TYPE PNP TO-3 TO-204AA TO-254AA hrE @ Id VCE min/max @ A/V ^ C E (sa t) @ Ic/Iß V @ A/A c ¥* p fx (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 2N6051A 2N6052A O-204AA 2N6285 2N6286A 2N6287A 2N7371A 2N6057A

    2N 6058

    Abstract: No abstract text available
    Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)


    OCR Scan     		PDF 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058

    2N6052

    Abstract: No abstract text available
    Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058


    OCR Scan     		PDF 2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency


    OCR Scan     		PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058

    Untitled

    Abstract: No abstract text available
    Text: r z 7 SGS-THOMSON “ 7# [MO MHLi(m]»KS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY DARLINGTON • HIGH GAIN ■ HIGH CURRENT ■ HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epi­ taxial base PNP transistors in monolithic Darlington


    OCR Scan     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S

    2N6050

    Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S
    Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.


    OCR Scan     		PDF 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    2N6050

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


    OCR Scan     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050

    2N6059

    Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
    Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059


    OCR Scan     		PDF 2N6051, 2N6052, 2N6058 2N6059 2N6058, 2N6059 2N6052 2N6059) 2N6051 2N60S2 DARLINGTON 3A 100V npn

    wf vqe 24 d

    Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058
    Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc


    OCR Scan     		PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052

    2N6059

    Abstract: 2N6050 2N6057 2N6051 2N6052 2N6058 2n6052 sgs N6050 SGS transistors n6052
    Text: « SGS-THOMSON WM RflDeœillLiO'irifiiOlsaDOS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES . HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


    OCR Scan     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058 2n6052 sgs N6050 SGS transistors n6052