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Microchip Technology Inc 2N6059 PNP POWER TRANSISTOR SILICON AMP
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DigiKey	2N6059	Bulk			100	1 - 10 - 100 $47.03 1000 $47.03 10000 $47.03	Buy Now
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Microchip Technology Inc	2N6059		232		1	1 $50.65 10 $50.65 100 $50.65 1000 $50.65 10000 $50.65	Buy Now

Onlinecomponents.com	2N6059					1 - 10 - 100 $44.91 1000 $44.91 10000 $44.91	Buy Now
NAC	2N6059	Tray			6	1 $51.69 10 $51.69 100 $47.61 1000 $44.12 10000 $44.12	Buy Now
EBV Elektronik	2N6059			37 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	2N6059					1 - 10 - 100 $44.91 1000 $44.91 10000 $44.91	Buy Now
STMicroelectronics 2N6059 TRANS NPN DARL 100V 12A TO3
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Bristol Electronics	2N6059		2,705			1 - 10 - 100 - 1000 - 10000 -	Get Quote
	2N6059		15			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	2N6059		2,164			1 $3.6 10 $3.6 100 $3.6 1000 $1.35 10000 $1.35	Buy Now
Microchip Technology Inc JAN2N6059 TRANS NPN DARL 100V 12A TO204AA
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DigiKey	JAN2N6059	Bulk			100	1 - 10 - 100 $47.97 1000 $47.97 10000 $47.97	Buy Now
Avnet Americas	JAN2N6059	Bulk		36 Weeks	100	1 $51.66 10 $51.66 100 $47.97 1000 $46.13 10000 $46.13	Buy Now
Newark	JAN2N6059	Bulk			100	1 - 10 - 100 $47.97 1000 $46.13 10000 $46.13	Buy Now
Microchip Technology Inc	JAN2N6059		79			1 $51.66 10 $51.66 100 $51.66 1000 $51.66 10000 $51.66	Buy Now
NAC	JAN2N6059	Tray			6	1 $52.71 10 $52.71 100 $48.55 1000 $45 10000 $45	Buy Now

Master Electronics	JAN2N6059					1 - 10 - 100 $45.81 1000 $45.81 10000 $45.81	Buy Now
Microchip Technology Inc JANTX2N6059 TRANS NPN DARL 100V 12A TO204AA
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DigiKey	JANTX2N6059	Bulk			100	1 - 10 - 100 $68.8101 1000 $68.8101 10000 $68.8101	Buy Now
Avnet Americas	JANTX2N6059	Bulk		36 Weeks	100	1 $74.1 10 $74.1 100 $68.81 1000 $66.16 10000 $66.16	Buy Now
Newark	JANTX2N6059	Bulk			100	1 - 10 - 100 $68.81 1000 $66.16 10000 $66.16	Buy Now
Microchip Technology Inc	JANTX2N6059		419			1 $74.1 10 $74.1 100 $74.1 1000 $74.1 10000 $74.1	Buy Now
NAC	JANTX2N6059	Tray			4	1 $75.61 10 $75.61 100 $69.64 1000 $64.55 10000 $64.55	Buy Now

EBV Elektronik	JANTX2N6059			37 Weeks	100	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	JANTX2N6059					1 - 10 - 100 $67.78 1000 $67.78 10000 $67.78	Buy Now
Microchip Technology Inc JANTXV2N6059 TRANS NPN DARL 100V 12A TO3
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DigiKey	JANTXV2N6059	Bulk			100	1 - 10 - 100 $87.83 1000 $87.83 10000 $87.83	Buy Now
Avnet Americas	JANTXV2N6059	Bulk		36 Weeks	100	1 $94.58 10 $94.58 100 $87.83 1000 $84.45 10000 $84.45	Buy Now
Newark	JANTXV2N6059	Bulk			100	1 - 10 - 100 $87.83 1000 $84.45 10000 $84.45	Buy Now
Microchip Technology Inc	JANTXV2N6059					1 $94.58 10 $94.58 100 $94.58 1000 $94.58 10000 $94.58	Buy Now
NAC	JANTXV2N6059	Tray			3	1 $96.51 10 $96.51 100 $88.89 1000 $82.39 10000 $82.39	Buy Now

Master Electronics	JANTXV2N6059					1 - 10 - 100 $86.51 1000 $86.51 10000 $86.51	Buy Now

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2N6059 Datasheets (50)

Part	Manufacturer	Description	Datasheet Type	PDF
2N6059	Comset Semiconductors	Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6059	Microsemi	NPN Darlington Power Silicon Transistor	Original	PDF
2N6059	Motorola	Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6059	On Semiconductor	TRANS DARLINGTON NPN 100V 12A 3TO-204AA - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6059	On Semiconductor	DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6059	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6059	STMicroelectronics	TRANS DARLINGTON NPN 100V 12A 2TO-3 - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6059	STMicroelectronics	SILICON NPN POWER DARLINGTON TRANSISTOR - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Original	PDF
2N6059	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF
2N6059	Boca Semiconductor	DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6059	Central Semiconductor	Darlington Bipolar Transistor, NPN, 100V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6059	Central Semiconductor	POWER DARLINGTON TRANSISTORS (METAL)	Scan	PDF
2N6059	Crimson Semiconductor	EPITAXIAL BASE / PLANAR Transistors	Scan	PDF
2N6059	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF

2N6059	General Electric	12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6059	LAMBDA	Semiconductor Data Book V1 1988	Scan	PDF
2N6059	Mospec	POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=100 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150	Scan	PDF
2N6059	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF
2N6059	Motorola	European Master Selection Guide 1986	Scan	PDF
2N6059	Motorola	Power Transistor Selection Guide	Scan	PDF

2N6059 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
2N6058 Abstract: 2N6059 Text: Product Specification www.jmnic.com 2N6058/2N6059 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High gain ・High current ・High dissipation ・Complement to type 2N5883/2N5884 APPLICATIONS ・They are intended for use in power linear	Original	PDF	2N6058/2N6059 2N5883/2N5884 2N6058 2N6059 120mA 2N6058 2N6059
100 amp npn darlington power transistors Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052 Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.	Original	PDF	2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
2N6292 Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111 Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes	Original	PDF	2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6059 2N6107 2N6111
Untitled Abstract: No abstract text available Text: 2N6059+JAN Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750	Original	PDF	2N6059
2N6059 Abstract: No abstract text available Text: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE s t c u d o ) r s ( P t c e t u e d l o o r s P b	Original	PDF	2N6059 2N6059
2N6059 Abstract: 2n6059 03 transistor 1547 b Text: 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR • ■ ■ ■ ■ ■ STMicrolectronics PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 1 2 APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL	Original	PDF	2N6059 2N6059 2n6059 03 transistor 1547 b
2n6059 Abstract: 100 amp darlington transistors 2N6058 2n6052 Text: ON Semiconductort PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN . . . designed for general−purpose amplifier and low frequency switching applications. 2N6058 2N6059* • High DC Current Gain — • hFE = 3500 Typ @ IC = 5.0 Adc Collector−Emitter Sustaining Voltage — @ 100 mA	Original	PDF	2N6052* 2N6058 2N6052, 2N6059 2N6059* 100 amp darlington transistors 2n6052
2N6059 JANTXV Abstract: 2N6059 Text: 2N6059 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	PDF	2N6059 O204AA) 31-Jul-02 2N6059 JANTXV 2N6059
1N5825 Abstract: 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA Text: MOTOROLA Order this document by 2N6052/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6052* Darlington Complementary Silicon Power Transistors NPN 2N6058 2N6059* . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain —	Original	PDF	2N6052/D 2N6052* 2N6058 2N6059 2N6052, 1N5825 2N6052 2N6058 2N6059 MSD6100 2N6058 MOTOROLA
2N6058 Abstract: 2N6059 2N5883 2N5884 Text: SavantIC Semiconductor Product Specification 2N6058 2N6059 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High current ;high dissipation ·DARLINGTON ·Complement to type 2N5883;2N5884 APPLICATIONS ·They are intended for use in power linear	Original	PDF	2N6058 2N6059 2N5883 2N5884 2N6058 120mA 2N6059 2N5884
Untitled Abstract: No abstract text available Text: SILICON MULTI-EPITAXIAL NPN TRANSISTOR 2N6059 • High Current Capability. • Hermetic TO3 Metal package. • Screening Options Available. ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated VCBO VCEO VEBO IC IB PD TJ Tstg Collector – Base Voltage	Original	PDF	2N6059 O-204AA)
2N605 Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224 Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc	Original	PDF	2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
BUX98PI Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490	Original	PDF	2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
Untitled Abstract: No abstract text available Text: 2N6059+JANTX Transistors NPN Darlington Transistor Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)150# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.750	Original	PDF	2N6059

2N 6058 Abstract: No abstract text available Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)	OCR Scan	PDF	2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058
500 watts audio amplifiers schematic diagram Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059 Text: 3875081 G E SOLID STATE 01 DE \| 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	PDF	17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058
2N6052 Abstract: No abstract text available Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058	OCR Scan	PDF	2N6051, 2N6052, 2N6058 2N6059 00Q33D2 2N6058, 2N6052
Untitled Abstract: No abstract text available Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency	OCR Scan	PDF	2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058
Untitled Abstract: No abstract text available Text: 2N6059 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6059 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 12 A Vce 1OO V Pd is s 15O W @ Te " 25 0C Tj -65 0C to &2OO 0C Ts t g -65 0C to &2OO 0C	OCR Scan	PDF	2N6059
Untitled Abstract: No abstract text available Text: i*imi ra@iû gs SCS-THOMSON 2N6059 SILICON NPN POWER DARLINGTON TRANSISTOR . . . . . . SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL	OCR Scan	PDF	2N6059 2N6059
RCA-2N6050 Abstract: n6050 2N60S Text: 3875081 6 E SOLID STATE Ql DE \| 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic	OCR Scan	PDF	17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S
2N6050 Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.	OCR Scan	PDF	2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S
2N6220 Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079	OCR Scan	PDF	2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60
2N6050 Abstract: No abstract text available Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon	OCR Scan	PDF	2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050

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2N6059 Datasheets (50)

2N6059 Datasheets Context Search

2N6058

100 amp npn darlington power transistors

2N6292

Untitled

2N6059

2N6059

2n6059

2N6059 JANTXV

1N5825

2N6058

Untitled

2N605

BUX98PI

Untitled

2N 6058

500 watts audio amplifiers schematic diagram

2N6052

Untitled

Untitled

Untitled

RCA-2N6050

2N6050

2N6220

2N6050