Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N6057 Search Results

    SF Impression Pixel

    2N6057 Price and Stock

    Microchip Technology Inc 2N6057

    POWER BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2N6057 Bulk 100
    • 1 -
    • 10 -
    • 100 $47.0402
    • 1000 $47.0402
    • 10000 $47.0402
    		Buy Now
    Avnet Americas 2N6057 Bulk 36 Weeks 100
    • 1 $50.66
    • 10 $50.66
    • 100 $47.04
    • 1000 $45.22
    • 10000 $45.22
    		Buy Now
    Mouser Electronics 2N6057
    • 1 $50.66
    • 10 $50.66
    • 100 $50.66
    • 1000 $50.66
    • 10000 $50.66
    		Get Quote
    Newark 2N6057 Bulk 100
    • 1 -
    • 10 -
    • 100 $47.04
    • 1000 $45.22
    • 10000 $45.22
    		Buy Now
    Future Electronics 2N6057 100
    • 1 -
    • 10 -
    • 100 $50.25
    • 1000 $50.25
    • 10000 $50.25
    		Buy Now
    Microchip Technology Inc 2N6057 1
    • 1 $50.66
    • 10 $50.66
    • 100 $50.66
    • 1000 $50.66
    • 10000 $50.66
    		Buy Now
    Onlinecomponents.com 2N6057
    • 1 -
    • 10 -
    • 100 $44.91
    • 1000 $44.91
    • 10000 $44.91
    		Buy Now
    NAC 2N6057 6
    • 1 $51.69
    • 10 $51.69
    • 100 $47.61
    • 1000 $44.12
    • 10000 $44.12
    		Buy Now
    EBV Elektronik 2N6057 37 Weeks 100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Master Electronics 2N6057
    • 1 -
    • 10 -
    • 100 $44.91
    • 1000 $44.91
    • 10000 $44.91
    		Buy Now

    NTE Electronics Inc 2N6057

    Transistor, Npn, 100V, 12A, To-204Aa-2; Transistor Polarity:Npn; Collector Emitter Voltage Max:100V; Continuous Collector Current:12A; Power Dissipation:150W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:- Rohs Compliant: Yes |Nte Electronics 2N6057
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark 2N6057 Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    Bristol Electronics 2N6057 16 1
    • 1 $14.625
    • 10 $10.9688
    • 100 $9.8719
    • 1000 $9.8719
    • 10000 $9.8719
    		Buy Now
    Quest Components 2N6057 12
    • 1 $19.5
    • 10 $14.625
    • 100 $14.625
    • 1000 $14.625
    • 10000 $14.625
    		Buy Now

    Motorola Mobility LLC 2N6057

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N6057 7 2
    • 1 -
    • 10 $4.48
    • 100 $4.48
    • 1000 $4.48
    • 10000 $4.48
    		Buy Now

    Motorola Semiconductor Products 2N6057

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N6057 7
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components 2N6057 7
    • 1 $2.25
    • 10 $2.07
    • 100 $2.07
    • 1000 $2.07
    • 10000 $2.07
    		Buy Now
    2N6057 5
    • 1 $6
    • 10 $4
    • 100 $4
    • 1000 $4
    • 10000 $4
    		Buy Now

    RCA 2N6057

    TRANSISTOR,BJT,DARLINGTON,NPN,60V V(BR)CEO,12A I(C),TO-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N6057 9
    • 1 $2.25
    • 10 $2.07
    • 100 $2.07
    • 1000 $2.07
    • 10000 $2.07
    		Buy Now

    2N6057 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6057 Comset Semiconductors Power Complementary Silicon Transistors - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6057 Motorola Darlington Complementary Silicon Power Transistor - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6057 Semelab Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Original PDF
    2N6057 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N6057 Boca Semiconductor DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6057 Central Semiconductor POWER DARLINGTON TRANSISTORS (METAL) Scan PDF
    2N6057 Central Semiconductor Darlington Bipolar Transistor, NPN, 60V at Tc=25C, TO-3, 2-Pin - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6057 Crimson Semiconductor EPITAXIAL BASE / PLANAR Transistors Scan PDF
    2N6057 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N6057 General Electric 12A N-P-N monolithic darlington power transistor. - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6057 Mospec POWER TRANSISTORS(12A,150W) - Pol=NPN / Pkg=TO3 / Vceo=60 / Ic=12 / Hfe=750min / fT(Hz)=4M / Pwr(W)=150 Scan PDF
    2N6057 Mospec Darlington Complementary Silicon-Power Transistor Scan PDF
    2N6057 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6057 Motorola European Master Selection Guide 1986 Scan PDF
    2N6057 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6057 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N6057 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6057 Unknown Transistor Replacements Scan PDF
    2N6057 Unknown Cross Reference Datasheet Scan PDF
    2N6057 Unknown Transistor Replacements Scan PDF

    2N6057 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6057

    Abstract: No abstract text available
    Text: 2N6057 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6057 O204AA) 31-Jul-02 2N6057

    100 amp npn darlington power transistors

    Abstract: 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052
    Text: MOTOROLA Order this document by 2N6050/D SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications.


    Original     		PDF 2N6050/D 2N6050 2N6052* 2N6057 2N6059 2N6050, 2N6051, 2N6058 2N6052, 100 amp npn darlington power transistors 10 amp npn darlington power transistors 2N6050 2N6057 MOTOROLA 2N6059 MOTOROLA darlington complementary power amplifier NPN 300 VOLTS vce POWER TRANSISTOR 1N5825 2n6051 motorola 2N6052

    2N6292

    Abstract: motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6057 2N6059 2N6107 2N6111
    Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes


    Original     		PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6107 2N6109* 2N6111, 2N6288 2N6292 motorola 2N6109 transistor 2N6109 2N6288 1N5825 2N6050 2N6059 2N6107 2N6111

    2N605

    Abstract: 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224
    Text: PNP NPN 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 ~~ DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed forgeneral-purpose amplifier and low-speed switching applications. . High DC Current hFE = 3500 Gain — Typ o Collector-Emitter @ IC = 5.0 Adc


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050, 80Vdc 2N6051, 2N605 2N6058 0S3224 2N6058 MOTOROLA 2N6050 2N6051 2N6052 2N6057 2N6059 DS3224

    2n6050

    Abstract: 2n6057 2N6052
    Text: 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 PNP NPN w w w. c e n t r a l s e m i . c o m COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base


    Original     		PDF 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6050,

    2SA1046

    Abstract: 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N6050 thru 2N6052* NPN 2N6057 thru 2N6059* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — hFE = 3500 Typ @ IC = 5.0 Adc


    Original     		PDF 2N6050, 2N6057 2N6051, 2N6058 2N6052, 2N6059 TIP73B TIP74 TIP74A TIP74B 2SA1046 2SC160 BU108 2sd718 amplifier d41k2 2SC237 BU100 MJD350-1 2N6052 equivalent TIP127 TIP122 AUDIO AMPLIFIER CIRCUIT

    2N6050

    Abstract: 2N6057 2N6052 2N6051 2N6059 2N6058
    Text: 2N6050/51/52 2N6057/58/59 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS n n n n 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES HIGH GAIN HIGH CURRENT HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon epitaxial-base PNP transistors in monolithic


    Original     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058

    2SA1046

    Abstract: mje15033 replacement 2SC1030 BD417 BD415 BD295 BU108 2SB528 BD262 2SC2080
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Complementary Silicon Plastic Power Transistors PNP 2N6107 2N6109* . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 7.0 Amperes


    Original     		PDF 2N6057 2N6059 2N6050) 2N6111, 2N6288 2N6109 2N6107, 2N6292 2SA1046 mje15033 replacement 2SC1030 BD417 BD415 BD295 BU108 2SB528 BD262 2SC2080

    Untitled

    Abstract: No abstract text available
    Text: 2N6057 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)


    Original     		PDF 2N6057 O204AA) 18-Jun-02

    2N6059

    Abstract: 2N6051 2N6057 2n6058 2N6052 2N6050 2N6052 equivalent npn darlington transistor 150 watts
    Text: 2N6050/51/52 2N6057/58/59 POWER COMPLEMENTARY SILICON TRANSISTORS The 2N6050, 2N6051 and 2N6052 are silicon epitaxialbase PNP transistors in monolithic Darlington configuration mounted in Jedec TO-3 metal case. They are inteded for use in power linear and low frequency


    Original     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050 2N6057 2N6057 2N6050 2N6052 equivalent npn darlington transistor 150 watts

    2N 6058

    Abstract: No abstract text available
    Text: 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 File Number 12-Ampere Complementary P-N-P and N-P-N Monolithic Darlington Power Transistors 1185 TERM INAL DESIGNATIONS c 60-80-100 Volts, 150 Watts Gain of 7000 Typ. at 5 A (2N6050, 2N6051, 2N6052) Gain of 4000 (Typ.) at 5 A (2N6057, 2N6058, 2N6059)


    OCR Scan     		PDF 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 2N6052) 2N 6058

    500 watts audio amplifiers schematic diagram

    Abstract: 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058 2N6059
    Text: 3875081 G E SOLID STATE 01 DE | 3ß?SDfil □□17E3Q □ 1~ T ~ 33- 1 3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere 500 watts audio amplifiers schematic diagram 2N6057 rca 2N6061 2N6050 2N60S0 31715 2N6051 2N6052 2N6058

    Untitled

    Abstract: No abstract text available
    Text: Back to Bipolar Darlington Transistors PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose am plifier and low frequency


    OCR Scan     		PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6051, 2N6058

    2N6052

    Abstract: 2N6057 2N6050 2N6051 2N6058 2N6059
    Text: 2N6050,2N6051,2N6052 PNP / 2N6057, 2N6058.2N6059 NPN ELECTRICAL CHARACTERISTICS Tc = 25°C unless otherwise noted Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector - Emitter Sustaining Voltage (1) ( I- = 100 mA, I- = 0 ) Collector Cutoff Current


    OCR Scan     		PDF 2N6050 2N6051 2N6052 2N6057, 2N6058 2N6059 2N6050, 2N6057 2N6051,

    RCA-2N6050

    Abstract: n6050 2N60S
    Text: 3875081 6 E SOLID STATE Ql DE | 3fl?SDfil □□17E3Q □ 1~ T~ 3 3 - ?3 Darlington Power = _ 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere Complementary P-N-P and N-P-N Monolithic


    OCR Scan     		PDF 17E3Q 2N6050, 2N6051, 2N6052, 2N6057, 2N6058, 2N6059 12-Ampere RCA-2N6050 n6050 2N60S

    2N6050

    Abstract: 2N6051 2N6052 2N6057 2N6058 2N6059 2n60 2N60S
    Text: DARLINGTOM COMPLEMENTARY SILICON-POWER TRANSISTORS NPN PNP 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 .designed for general-purpose power amplifier and low frequency switching applications FEATURES: * Monolithic Construction with Bult-in Base-Emitter Shunt Resistors.


    OCR Scan     		PDF 2N6050 2N6057 2N6051 2N6058 2N6052 2N6059 2N6057 2N60S8 2N6058 2N6059 2n60 2N60S

    2N6220

    Abstract: 2N6256 2N6258 PNP 2N60 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051
    Text: 4ÖE J> m Ö1331Ö7 00DÜ442 322 SEMELAB SEMELAB LT D TW t> \ BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N6033 2N6047 2N6049 2N6049E 2N6050 2N6051 2N6052 2N6053 2N6054 2N6055 2N6056 2N6057 2N6058 2N6059 2N6077 2N6078 2N6079


    OCR Scan     		PDF 2N6033 2N6047 2N6049 2N6049E 2N6050 750-12k 2N6051 2N6052 2N6220 2N6256 2N6258 PNP 2N60

    2N6050

    Abstract: No abstract text available
    Text: SGS-THOMSON 2N6050/51/52 2N6057/58/59 [¡»æSLitgraiMOOi COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052,2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES • HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


    OCR Scan     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052 2N6057 2N6059 2N6051 2N6057, 2N6050

    wf vqe 24 d

    Abstract: WF VQE 13 2N6050 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052 2N6057 2N6058
    Text: PNP NPN 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* *also available a JAN, JANTX, JANTXV DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS DARLINGTON 12 AMPERE . . . designed for general-purpose amplifier and low frequency switching applications. • High DC Current G ainhpE = 3500 Typ @ lc - 5.0 Adc


    OCR Scan     		PDF 2N6050 2N6057 2N6051* 2N6058* 2N6052* 2N6059* 2N6050, 2N6057 2N6051, 2N6058 wf vqe 24 d WF VQE 13 M6052 WF VQE 11 E WF vqe 24 e 2N6051 2N6052

    2N6059

    Abstract: 2N6050 2N6057 2N6051 2N6052 2N6058 2n6052 sgs N6050 SGS transistors n6052
    Text: « SGS-THOMSON WM RflDeœillLiO'irifiiOlsaDOS 2N6050/51/52 2N6057/58/59 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . 2N6050, 2N6052, 2N6057 AND 2N6059 ARE SGS-THOMSON PREFERRED SALESTYPES . HIGH GAIN . HIGH CURRENT . HIGH DISSIPATION DESCRIPTION The 2N6050, 2N6051 and 2N6052 are silicon


    OCR Scan     		PDF 2N6050/51/52 2N6057/58/59 2N6050, 2N6052, 2N6057 2N6059 2N6051 2N6052 2N6057, 2N6050 2N6058 2n6052 sgs N6050 SGS transistors n6052

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6107/D SEMICONDUCTOR TECHNICAL DATA 2N6057 thru 2N6059 See 2N6050 Com plem entary Silicon Plastic Power Transistors PNP 2N 61 07 . . . designed for use in general-purpose amplifier and switching applications. • • •


    OCR Scan     		PDF 2N6107/D 2N6057 2N6059 2N6050) 2N6109* 2N6111, 2N6288 2N6109

    2N6057

    Abstract: 2N6050 2N6051 2N6052 2N6058 2N6059
    Text: Datasheet 2N6050, 2N6051, 2N6052 2N6057, 2N6058, 2N6059 Central PNP NPN COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-3 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF 2N6050, 2N6051, 2N6052 2N6057, 2N6058, 2N6059 2N6057 2N6050 2N6051 2N6058

    transistor 206

    Abstract: 2N7370 AN-750 2N6050 2N6051 2N6052 2N6057 2N6058 2N6059 2N6285
    Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR DARLINGTON PNP TRANSISTOR sus VOLTS Ic (max) AMPS 2N6050 60 12 2N6051 80 2N6052 PACKAGE DEVICE TYPE PNP TO-3 TO-204AA flCX TO-254AA V cE O Ic/ V c E min/max @ A/V 1*FE @ ^C E (sat) @ IC/IB V @ A/A C(P P Ît (MHz) 750/18000@6/3


    OCR Scan     		PDF 2N6050 O-204AA 2N6051 2N6052 2N6285 2N6286 2N6287 O-254AA 2N7371 T0-204AA transistor 206 2N7370 AN-750 2N6057 2N6058 2N6059

    Untitled

    Abstract: No abstract text available
    Text: General Transistor Corporation CASE TO-3 le MAX = 2-50A V c e o (sus) = 35-500V NPN Power Transistors PNP Type No. complement MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 DARLINGTON yes yes yes yes MJ10012 MJ13015 MJ 13330 VCEO (sus) IC (max) (v) (A)


    OCR Scan     		PDF 5-500V MJ1000 MJ900 MJ1001 MJ3001 MJ13014 MJ901 MJ2501 MJ10012 MJ13015