STRH40P Search Results
STRH40P Price and Stock
STMicroelectronics STRH40P10HYG- Bulk (Alt: STRH40P10HYG) |
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STRH40P10HYG | Bulk | 111 Weeks | 10 |
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STMicroelectronics STRH40P10HYT- Bulk (Alt: STRH40P10HYT) |
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STRH40P10HYT | Bulk | 111 Weeks | 10 |
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STMicroelectronics STRH40P10HY1- Bulk (Alt: STRH40P10HY1) |
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STRH40P10HY1 | Bulk | 111 Weeks | 10 |
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STRH40P10HY1 |
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STRH40P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened |
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STRH40P10 O-254AA SC06140p | |
to-254aaContextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened |
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STRH40P10 O-254AA STRH40P10FSY1 STRH40P10FSY01 to-254aa | |
RH40PContextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization |
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STRH40P10FSY3 O-254AA O-254AA STRH40P10 RH40P | |
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
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STRH40P10 O-254AA SC06140p DocID18354 | |
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
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STRH40P10 O-254AA SC06140p DocID18354 | |
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
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STRH40P10 O-254AA SC06140p DocID18354 | |
strh40p10
Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
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STRH40P10 O-254AA SC06140p strh40p10 STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H | |
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite |
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STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10Hy | |
Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■ |
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STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA | |
Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA |
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STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm O-254AA | |
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
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STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354 | |
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite |
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STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10HYG | |
Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge |
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STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA | |
strh40p10
Abstract: STRH40P10HYG
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STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P strh40p10 STRH40P10HYG | |
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STRH40P10FSY3
Abstract: JESD97 STRH40P10FSY1
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STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm STRH40P10FSY3 JESD97 STRH40P10FSY1 | |
Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened |
Original |
STRH40P10 O-254AA O-254AA SC06140p |