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STMicroelectronics STRH40P10HY1 Trans MOSFET P-CH 100V 34A 3-Pin(3+Tab) TO-254AA - Bulk (Alt: STRH40P10HY1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STRH40P10HY1	Bulk			10	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Mouser Electronics	STRH40P10HY1					1 - 10 - 100 - 1000 - 10000 -	Get Quote

STRH40P10HY1 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	PDF	STRH40P10 O-254AA SC06140p DocID18354
Untitled Abstract: No abstract text available Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	PDF	STRH40P10 O-254AA SC06140p DocID18354
Untitled Abstract: No abstract text available Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	PDF	STRH40P10 O-254AA SC06140p DocID18354
strh40p10 Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2	Original	PDF	STRH40P10 O-254AA SC06140p strh40p10 STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Untitled Abstract: No abstract text available Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	PDF	STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10Hy
Untitled Abstract: No abstract text available Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	PDF	STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354
Untitled Abstract: No abstract text available Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	PDF	STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10HYG
strh40p10 Abstract: STRH40P10HYG Text: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	PDF	STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P strh40p10 STRH40P10HYG