STRH40P10FSY1 Search Results

Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA

STRH40P10FSY3

Abstract: JESD97 STRH40P10FSY1
Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened

to-254aa

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened

RH40P

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge

STRH40P10FSY3

Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened