STP3N100XI Search Results

Contextual Info: STP3N100XI Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)1.0k V(BR)GSS (V)20 I(D) Max. (A)1.6# I(DM) Max. (A) Pulsed I(D)1 @Temp (øC)100# IDM Max (@25øC Amb)6.4 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)30# Minimum Operating Temp (øC)

Contextual Info: 712T237 D04LEGÔ 7bb •SGTH / = 7 SGS-THOMSON Ä 7# S T P 3 N 100X 1 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S TP 3N 100XI . . ■ . . ■ V dss RDS on Id 1000 V <61! 1.6 A AVALANCHE RUGGED TECHNO LOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

stp3n100xi

Abstract: 692m
Contextual Info: SGS-THOMSON * t7 ilL J O T « ! S T P 3 N 1OOXI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE S T P 3 N 1 0 0X I V d ss RDS on Id 1 000 V 6 Í1 1.6 A AVALANC HE RUG G EDNESS TECHNO LO G Y 100% AVALAN C H E TESTED REPETITIVE AVALANC HE DATA AT 100°C

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

TSD45N50V

Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Contextual Info: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000