Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STH33N20FI Search Results

    STH33N20FI Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STH33N20FI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STH33N20FI STMicroelectronics N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR Scan PDF

    STH33N20FI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STE100N20

    Abstract: Ultrasonic welding circuit diagram STH33N20FI E81743
    Text: STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE V DSS R DS on ID STE100N20 200 V < 0.021 Ω 100 A 4 • ■ ■ ■ ■ ■ ■ ■ ■ HIGH CURRENT POWER MODULE AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)


    Original     		PDF STE100N20 STH33N20FI E81743) STE100N20 Ultrasonic welding circuit diagram E81743

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    SSH6N80

    Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
    Text: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent

    100N20

    Abstract: ste100n20 C59-60
    Text: £ j ï SGS-THOMSON S T E 100N 20 ULKgraMOeS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYP E V STE100N20 dss 200 V RDS on Id < 0.021 Q. 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING) . VERY LARGE SOA - LARGE PEAK POWER


    OCR Scan     		PDF STE100N20 STH33N20FI E81743) 100N20 ste100n20 C59-60

    Untitled

    Abstract: No abstract text available
    Text: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)


    OCR Scan     		PDF STE100N20 STH33N20FI E81743) 5606Q

    ISD100A

    Abstract: STE100N20 100R6 STH33N20FI DD45
    Text: m 7 ^ 5 ^53? 0045632 Sfl3 • S G T H f Z 7 SCS-THOMSON Ä 7# STE100N20 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN ISOTOP PACKAGE TYPE STE100N20 V dss RüS on Id 200 V < 0.021 Q 100 A . HIGH CURRENT POWER MODULE . AVALANCHE RUGGED TECHNOLOGY (SEE STH33N20FI FOR RATING)


    OCR Scan     		PDF STE100N20 STE100N20 STH33N20FI E81743) 7TE1E37 100R6 GC5606 ISD100A DD45

    33N20

    Abstract: sth33n20fi
    Text: SGS-THOMSON STH33N20 STH33N20FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss STH33N20 STH33N20FI 200 V 200 V RDS on 0.085 0.085 n n Id 33 A 20 A . AVALAN C H E RUG G EDN ESS TECHNO LO GY . 100% AVALANC HE TESTED . REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF STH33N20 STH33N20FI O-218 ATT218 STH33M20/-I 33N20 sth33n20fi

    c3320

    Abstract: l33a sth33n20fi UPS smk CIRCUIT STH33N20 STW33N20
    Text: 2 < a O , ln é SGSTHOMSON E STH33N20/FI STW33N20 !ül gT[E M(gI i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE S TH33N20 STH33N20FI STW 33N20 V dss R D S (o n Id 200 V 200 V 200 V < 0.085 n < 0.085 n < 0.085 n 33 A 20 A 33 A . TYPICAL RDS(on) = 0.073 Q


    OCR Scan     		PDF STH33N20/FI STW33N2Q STH33N20 STH33N20FI STW33N20 STH/STW33N20 STH33N20FI CC27111 STH33N20/F1 STW33N20 c3320 l33a UPS smk CIRCUIT

    TSD45N50V

    Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
    Text: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00


    OCR Scan     		PDF O-220 TSD45N50V TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V

    SGS M114S

    Abstract: M114S TDA 931 PS TDA7284 equivalent TDA2003 equivalent TDA73XX TOKO kacs 10.7MHz fm coil TBA820M equivalent 27mhz remote control transmitter circuit FOR CAR UC3840
    Text: AUDIO POWER & PROCESSING ICs DATABOOK 1st EDITION JUNE 1991 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS W ITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics.


    OCR Scan     		PDF

    ld33a

    Abstract: c3320 D33A STH33N20 STH33N20FI LD33 RC50 STW33N20 D-33A 7W237
    Text: 7 T S T E 3 7 DO HSTHS 3G 3 « S Ü T H STH33N20/FI STW33N20 SGS-THOMSON ¡[iJ § «S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 33N20 S TH 33N20FI STW 33N20 • . . . . V d ss Ros(on Id 200 V 200 V 200 V < 0.085 Q < 0.085 £i < 0.085 n


    OCR Scan     		PDF 7TSTE37 STH33N20/FI STW33N20 STH33N20 STH33N20FI STW33N20 STH/STW33N20 7TST237 STH33N20/FI-STW33N20 ld33a c3320 D33A LD33 RC50 D-33A 7W237

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


    OCR Scan     		PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V

    5358A

    Abstract: d 317 transistor TSD4M251F TSD4M251V SP 358 s
    Text: 3QE D • 7^237 Q0305Sb b SGS-THOMSON IILHO T *! Ç7 ' r 3 °i S G S-THOMSON 5 TSD4M251F TSD4M251V N - CHANNEL ENHANCEMENT MODE ISOFET POWER MOS TRANSISTOR MODULE TY P E V dss RDS on Id TS D 4M 251F/V 150 V 0.021 n 110 A . . ■ ■ . . ■ . HIGH CURRENT POWER MOS MODULE


    OCR Scan     		PDF Q0305Sb 251F/V TSD4M251F TSD4M251V STH33N20FI T-91-20 O-240) PC-029« 5358A d 317 transistor TSD4M251V SP 358 s