33N20 Search Results

c3320

Abstract: l33a sth33n20fi UPS smk CIRCUIT STH33N20 STW33N20
Contextual Info: 2 < a O , ln é SGSTHOMSON E 33N20/FI 33N20 !ül gT[E M(gI i N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR T YPE S 33N20 33N20FI STW 33N20 V dss R D S (o n Id 200 V 200 V 200 V < 0.085 n < 0.085 n < 0.085 n 33 A 20 A 33 A . TYPICAL RDS(on) = 0.073 Q

SGS-Thomson mosfet

Contextual Info: s= 7 SGS-THOMSON ^7# K l «iLiM (s iO (gS 33N20 N - CHANNEL ENHANCEMENT MODE POWER MOSFET TYPE STW 33N20 V dss RDS(on) Id 200 V < 0.085 Q 33 A . TYPICAL Rds(oh) = 0.073 £1 m AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100 °C

ld33a

Abstract: c3320 D33A STH33N20 STH33N20FI LD33 RC50 STW33N20 D-33A 7W237
Contextual Info: 7 T S T E 3 7 DO HSTHS 3G 3 « S Ü T H 33N20/FI 33N20 SGS-THOMSON ¡[iJ § «S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 33N20 S TH 33N20FI STW 33N20 • . . . . V d ss Ros(on Id 200 V 200 V 200 V < 0.085 Q < 0.085 £i < 0.085 n

Contextual Info: SGS-THOMSON RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ 33N20 N - CHANNEL ENHANCEMENT MODE POWER MOSFET TYP E V STW 33N20 . . . . . . . . dss 200 V R d S ( o ii) Id < 0 .0 8 5 Q. 33 A TYPICAL Ros(on) =0.073 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

33N20

Abstract: sth33n20fi
Contextual Info: SGS-THOMSON 33N20 33N20FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V dss 33N20 33N20FI 200 V 200 V RDS on 0.085 0.085 n n Id 33 A 20 A . AVALAN C H E RUG G EDN ESS TECHNO LO GY . 100% AVALANC HE TESTED . REPETITIVE AVALANCHE DATA AT 100°C

12N60FI

Abstract: K791 a4n50e 2N60E k2n50 2SK1118 cross reference p3n90 p3n60 P6N60 TP3055EL
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON SGS-THOMSON NEAREST PAGE 633 2SK 955 STH V82 481 113 481 34 9 2S K 9 5 6 31 9 2SK960 2SK961 2SK962 S TH 8N 80 STP3N 60FI 2S K 1117 B U Z 80 STH V82 S TH 5N 90