Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STATIC RAM 2048K 70 NS Search Results

    STATIC RAM 2048K 70 NS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DF2B5M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B6M4ASL Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B5PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    DF2B7PCT Toshiba Electronic Devices & Storage Corporation TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2) Visit Toshiba Electronic Devices & Storage Corporation
    MD2114A/BVA Rochester Electronics LLC STATIC RAM; 1K X 4 Visit Rochester Electronics LLC Buy

    STATIC RAM 2048K 70 NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 2048K 48-ball CY62168DV30

    Untitled

    Abstract: No abstract text available
    Text: EDI8G322048V White Electronic Designs 2048K x 32 STATIC RAM CMOS, HIGH SPEED MODULE FEATURES DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory n n n Access Times: 20, 25, and 35ns n Individual Byte Selects n Fully Static, No Clocks n TTL Compatible I/O


    Original     		PDF EDI8G322048V 2048K EDI8G322048V 1024Kx4

    cd 5151

    Abstract: 1MX4 EDI8G322048V EDI8G322048V20MMC DQ28-DQ31
    Text: EDI8G322048V 2048K x 32 Static RAM CMOS, High Speed Module Features DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048V is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ


    Original     		PDF EDI8G322048V 2048K EDI8G322048V 1024K EDI8G322048V20MMC EDI8G322048V25MMC EDI8G322048V35MMC cd 5151 1MX4 EDI8G322048V20MMC DQ28-DQ31

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.dalsemi.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


    Original     		PDF DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin A11TTP 32-pin, 600-mil DS1249Y/AB DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 2048K 48-ball CY62168DV30

    32-PIN

    Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
    Text: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns


    Original     		PDF DS1249Y/AB 2048k DS1249Y) DS1249AB) 32-pin 32-pin, 600-mil DS1249Y/AB 740-MIL DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70

    Untitled

    Abstract: No abstract text available
    Text: EDI8G322048C 2048K x 32 Static R AM CMOS, High Speed Module RAM FEATURES DESCRIPTION n 2048K x 32 bit CMOS Static n Random Access Memory The EDI8G322048C is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ


    Original     		PDF EDI8G322048C 2048K EDI8G322048C 1024K EDI8G322048C20MMC EDI8G322048C25MMC EDI8G322048C35MMC

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE 1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


    Original     		PDF CY62168DV30 16-Mbit 2048K 48-ball

    DQ8-DQ11

    Abstract: EDI8G322048C static ram 2048K 70 ns
    Text: EDI8G322048C 2048K x 32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION •2048K x 32 bit CMOS Static The EDI8G322048C is a high speed 64 megabit Static RAM module organized as 2048K words by 32 bits. This module is constructed from sixteen 1024K x 4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.


    Original     		PDF EDI8G322048C 2048K EDI8G322048C 1024K 8G322048C EDI8G322048C20MMC DQ8-DQ11 static ram 2048K 70 ns

    DS1249AB

    Abstract: DS1249Y
    Text: DS1249Y/AB DS1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Read and write access times as fast as 70 ns A6 6 27


    Original     		PDF DS1249Y/AB 2048K DS1249Y) DS1249Y/AB DS1249AB DS1249Y

    static ram 2048K 70 ns

    Abstract: DS1249AB DS1249Y
    Text: DS1249Y/AB DS1249Y/AB 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Read and write access times as fast as 70 ns A6 6 27


    Original     		PDF DS1249Y/AB 2048K DS1249Y) DS1249Y/AB static ram 2048K 70 ns DS1249AB DS1249Y

    32-PIN

    Abstract: DS1249Y
    Text: DS1249Y DS1249Y 2048K Nonvolatile SRAM FEATURES PIN ASSIGNMENT • 10 years minimum data retention in the absence of external power NC 1 32 VCC A16 2 31 A15 A14 3 30 A17 A12 4 29 WE A7 5 28 A13 • Low-power CMOS A6 6 27 A8 • JEDEC standard 32–pin DIP package


    Original     		PDF DS1249Y 2048K DS1249Y 32-PIN 32-PIN

    55BVXI

    Abstract: CY62168DV30 CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


    Original     		PDF CY62168DV30 16-Mbit 2048K CY62168DV30 55BVXI CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 MoBL® Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


    Original     		PDF CY62168DV30 16-Mbit 2048K 48-ball

    Untitled

    Abstract: No abstract text available
    Text: DALLAS DS1249Y 2048K Nonvolatile SRAM s e m ic o n d u c t o r PIN ASSIGNM ENT FEATURES • Data retention in the absence of Vqc I1 1 I1 2 I1 3 I1 4 I1 5 I1 6 II 7 I1 6 I1 9 I1 10 A1 I1 11 AO 11 12 DQO 11 13 DQ1 I1 14 DQ2 I1 15 GND I1 16 NC A16 A14 A12 A7


    OCR Scan     		PDF DS1249Y 2048K 32-pin DS1249Y

    Untitled

    Abstract: No abstract text available
    Text: D S 1249Y DALLAS SEMICONDUCTOR DS1249Y 2048K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • Data retention in the absence of Vcc • Data is automatically protected during power loss • Replaces 256K x 8 volatile static RAM or EEPROM • Unlimited write cycles


    OCR Scan     		PDF 1249Y DS1249Y 2048K 32-pin DS1249Y 32-PIN Pbl4130

    Untitled

    Abstract: No abstract text available
    Text: DS 1249Y DALLAS DS1249Y 2048K Nonvolatile SR A M s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power NC • Data is automatically protected during power loss • Directly replaces 256K x 8 volatile static RAM


    OCR Scan     		PDF 1249Y DS1249Y 2048K 32-pin 0013S02 DS1249Y 32-PIN

    static ram 2048K

    Abstract: No abstract text available
    Text: DALLAS s e m ic o n d u c t o r DS1249Y 2048K Nonvolatile SRAM PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power Vcc A15 • Data is automatically protected during power loss A17 • Directly replaces 256K x 8 volatile static RAM


    OCR Scan     		PDF 2048K DS1249Y 32-pin DS1249 DS1249Y static ram 2048K

    Untitled

    Abstract: No abstract text available
    Text: AK5322048BW 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory m O C IM T C O R PO m O N DESCRIPTION The Accutek AK5322048BW high density memory module is a CMOS dynamic RAM organized in 2048K x 32 bit words. The mod­ ule consists of four standard 1 Meg x 16 bits DRAMs in plastic SOJ


    OCR Scan     		PDF AK5322048BW 2048K

    32-PIN

    Abstract: DS1249Y DS1249Y-100 DS1249Y-85
    Text: DS 1249Y DALLAS „ DS1249Y 2048K Nonvolatile S R A M s e m ic o n d u c t o r PIN ASSIGNMENT FEATURES • 10 years minimum data retention in the absence of external power NC I1 1 • Data is automatically protected during power loss A16 I1 A14 I1 • Directly replaces 256K x 8 volatile static RAM


    OCR Scan     		PDF DS1249Y 2048K 32-pin D013SG2 DS1249Y 32-PIN DS1249Y-100 DS1249Y-85

    DIP 32 pinout

    Abstract: No abstract text available
    Text: ^EDI EDI8M8257C Electronic Designs Inc. • High Speed Two Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8257C is a 2048K bit CMOS Static RAM based on two 128Kx8 Static RAMs mounted on a multi­ layered ceramic substrate. Functional equivalence to the monolithic two megabit


    OCR Scan     		PDF 256Kx8 150ns 150ns EDI8M8257LP) EDI8M8257C EDI8M8257C 2048K 128Kx8 EDI8M8257LP100C6B DIP 32 pinout

    Untitled

    Abstract: No abstract text available
    Text: AK5322048N 2,097,152 Word by 32 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION minimi innmmi The Accutek AK5322048N high density memory module is a CMOS dynamic RAM organized in 2048K x 32 bit words. The module consists of four standard 1 Meg x 16 DRAMs in plastic TSOP


    OCR Scan     		PDF AK5322048N AK5322048N 2048K

    Untitled

    Abstract: No abstract text available
    Text: DS 1249Y DALLAS „ DS1249Y 2048K Nonvolatile SRAM s e m ic o n d u c to r PIN ASSIGNMENT FEATURES • 10 years m inimum data retention in the absence of external power NC I1 1 32 I VCC A16 I1 2 31 A15 A14 I1 3 30 1 At 7 A12 I1 4 29 I WE A7 I1 5 28 I A13


    OCR Scan     		PDF DS1249Y 2048K 32-pin D013SG2 32-PIN

    Untitled

    Abstract: No abstract text available
    Text: AK5362048WP 2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK53620482WP high density memory module is a CMOS dynamic RAM organized in 2048K x 36 bit words. The module consists of sixteen standard 1 Meg x 4 DRAMs in plastic


    OCR Scan     		PDF AK5362048WP AK53620482WP 2048K AK5362048