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    CY62168DV30 Search Results

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    CY62168DV30 Price and Stock

    Infineon Technologies AG CY62168DV30LL-55BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVI Tray
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    Flip Electronics CY62168DV30LL-55BVI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVI Tray 30
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    Flip Electronics CY62168DV30LL-55BVIT

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVIT Reel 100
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    Infineon Technologies AG CY62168DV30LL-55BVIT

    IC SRAM 16MBIT PARALLEL 48VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CY62168DV30LL-55BVIT Reel
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    Avnet Americas CY62168DV30LL-55BVIT Reel 0 Weeks, 2 Days 94
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    Infineon Technologies AG CY62168DV30LL-55BVXI

    IC SRAM 16MBIT PARALLEL 48VFBGA
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    DigiKey CY62168DV30LL-55BVXI Tray
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    CY62168DV30 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY62168DV30 Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30L-55BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30L-55BVXI Cypress Semiconductor Original PDF
    CY62168DV30L-70BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30L-70BVXI Cypress Semiconductor Original PDF
    CY62168DV30LL-55BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30LL-55BVI Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62168DV30LL-55BVIT Cypress Semiconductor 16-Mbit (2M x 8) MoBL(R) Static RAM; Density: 16 Mb; Organization: 2Mb x 8; Vcc (V): 2.20 to 3.60 V; Original PDF
    CY62168DV30LL-55BVIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62168DV30LL-55BVXI Cypress Semiconductor Original PDF
    CY62168DV30LL-55BVXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 16MBIT 55NS 48VFBGA Original PDF
    CY62168DV30LL-70BVI Cypress Semiconductor 16-Mbit (2048K x 8) Static RAM Original PDF
    CY62168DV30LL-70BVXI Cypress Semiconductor Original PDF

    CY62168DV30 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CY62168DV30

    Abstract: CY62168DV30LL-55BVI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when


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    PDF CY62168DV30 16-Mbit CY62168DV30LL-55BVI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE 1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


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    PDF CY62168DV30 16-Mbit 2048K 48-ball

    AN1064

    Abstract: CY62168DV30 CY62168DV30LL-55BVI cypress AN1064 sram system guidelines
    Text: CY62168DV30 MoBL ® 16-Mbit 2 M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)


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    PDF CY62168DV30 16-Mbit AN1064 CY62168DV30LL-55BVI cypress AN1064 sram system guidelines

    ultra fine pitch BGA

    Abstract: CY62168DV30 CY62168DV30LL-55BVI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when


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    PDF CY62168DV30 16-Mbit ultra fine pitch BGA CY62168DV30LL-55BVI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


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    PDF CY62168DV30 2048K 48-ball CY62168DV30

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V–3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)


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    PDF CY62168DV30 16-Mbit

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL  16-Mbit 2M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fMax (55 ns Speed)


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    PDF 16-Mbit CY62168DV30 48-ball

    Untitled

    Abstract: No abstract text available
    Text: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)


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    PDF CY62168DV30 2048K 48-ball CY62168DV30

    CY62168DV30

    Abstract: CY62168DV30LL-55BVI
    Text: CY62168DV30 MoBL ® 16-Mbit 2M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fMax (55 ns Speed)


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    PDF CY62168DV30 16-Mbit CY62168DV30LL-55BVI

    55BVXI

    Abstract: CY62168DV30 CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


    Original
    PDF CY62168DV30 16-Mbit 2048K CY62168DV30 55BVXI CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL ® 16-Mbit 2 M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)


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    PDF CY62168DV30 16-Mbit

    Untitled

    Abstract: No abstract text available
    Text: CY62168DV30 MoBL 16-Mbit 2048K x 8 MoBL® Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in


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    PDF CY62168DV30 16-Mbit 2048K 48-ball

    cy62168dv30ll55bvi

    Abstract: CY62168DV30 CY62168DV30LL-55BVI
    Text: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when


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    PDF CY62168DV30 16-Mbit cy62168dv30ll55bvi CY62168DV30LL-55BVI

    CY62167DV30L-55ZI

    Abstract: CY62167DV30
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed


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    PDF CY62167DV30 16-Mbit I/O15) CY62167DV30 48-lead BV48A BV48B CY62167DV30L-55ZI

    CY62167DV30LL-70ZXI

    Abstract: 2057-01 Z48A BV48
    Text: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are


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    PDF CY62167DV30 16-Mbit 48-ball 48-pin I/O15) 48-lead BV48A BV48B 45-ns CY62167DV30LL-70ZXI 2057-01 Z48A BV48

    CY62167DV30

    Abstract: CY62167DV30LL
    Text: CY62167DV30 MoBL 16 MB 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed


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    PDF CY62167DV30 I/O15) CY62167DV30 CY62167DV30LL