1MX4 Search Results

K6R4004C1D-JC

Abstract: K6R4004V1D K6R4016V1D-J
Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

Contextual Info: PcRam TS1M9360 Description Features The TS1M9360 is a 1M by 9-bit dynamic RAM • 1,048,576-word by 9-bit organization. module with 2pcs of 1Mx4 and 1pc of 1Mx1 DRAMs • Fast Page Mode operation. assembled on the printed circuit board. • Single +5.0V ± 10% power supply.

we 510

Abstract: UG9M
Contextual Info: UG9M13621DBG T 4M Bytes (1M x 36 ) DRAM w/Parity 72Pin SIMM based on 1M X 4 General Description Features The UG9M13621DBG(T) is a 1,048,576 bits by 36 SIMM module.The UG9M13621DBG(T) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package, and 1 pc of 1Mx4 Quad-CAS

1Mx4

Contextual Info: UG8M13201DBJ N 4M Bytes (1M x 32 ) DRAM 72Pin SIMM based on 1M X 4 General Description Features The UG8M13201DBJ(N) is a 1,048,576 bits by 32 SIMM module.The UG8M13201DBJ(N) is assembled using 8 pcs of 1Mx4 1K refresh in 300mil package,mounted on a 72 Pin unbuffered

Contextual Info: K6R4004C1C-C, K6R4004C1C-E, K6R4004C1C-I PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

K6R4008V1D

Abstract: K6R4016C1D 44-TSOP2
Contextual Info: PRELIMINARY CMOS SRAM K6R4004V1D Document Title 1Mx4 Bit High Speed Static RAM 3.3V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Preliminary. Aug. 20. 2001 Preliminary

Contextual Info: SMART SM5360140U1EUUU Modular Technologies November 12, 1996 4MByte 1M x 36 DRAM Module - 1Mx4 based 72-pin SIMM, ECC Features Part Numbers • • • • • • • • • • • SM536014001EUUU SM536014011EUUU SM536014081EUUU SM536014091EUUU Standard

Contextual Info: IC41UV4105 Document Title 1Mx4 bit Dynamic RAM with Fast Page Mode Revision History Revision No History Draft Date Remark 0A 0B Initial Draft 1.Change for VCC 2.6±0.3 to 2.6±0.2V August 9,2001 August 24,2001 Preliminary The attached datasheets are provided by ICSI. Integrated Circuit Solution Inc reserve the right to change the specifications and

Contextual Info: SMART SM5331000 Modular Technologies February 12, 1997 4MByte 1M x 33 DRAM Module - 1Mx4 based 72-pin SIMM Features • • • • • • • • • • • Standard : JEDEC Configuration : Parity Access Time : 60/70/80ns Operation Mode : FPM Operating Voltage :

K6R4016V1D-J

Contextual Info: Preliminary PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001

Contextual Info: PRELIMINARY Preliminary CMOS SRAM K6R4004C1C-C, K6R4004C1C-I Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

Contextual Info: PRELIMINARY Preliminary CMOS SRAM KM644002C, KM644002CI Document Title 1Mx4 Bit High Speed Static RAM 5V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.

HY514400A

Abstract: HY514400AJ HY514400ALJ HY514400ALT HY514400AT
Contextual Info: HY514400A 1Mx4, Fast Page mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design

tb41

Contextual Info: DRAM MODULE KMM5362203AW/AWG KMM5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The

taa 440

Contextual Info: SMART SM5320140U1XUUU Modular Technologies November 19, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SIMM Features Part Numbers • • • • • • • • • • • SM532014001XUUU SM532014011XUUU SM532014081XUUU SM532014091XUUU Standard

HY514404A

Abstract: 1Mx4 EDO RAM
Contextual Info: HY514404A 1Mx4, Extended Data Out mode DESCRIPTION This family is a 4M bit dynamic RAM organized 1,048,576 x 4-bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The circuit and process

Contextual Info: SMART SM5320140U1XSUU Modular Technologies May 13, 1996 4MByte 1M x 32 DRAM Module - 1Mx4 based 72-pin SODIMM Features Part Numbers • • • • • • • • • • • SM532014001XSUU SM532014011XSUU SM532014081XSUU SM532014091XSUU Standard :

Contextual Info: KM644002, KM644002E, KM644002I CMOS SRAM Document Title 1Mx4 Bit with OË High Speed Static RAM(5V Operating), Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0

KM44C4000aS 6

Abstract: KM44C4000AS KM44C4000A-S km44c4100as KM48V2100AL KM416V256BL
Contextual Info: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION DRAM 4 M b it 4Mx1 1Mx4 KM41C4000C-6 KM41C4000C-7 " KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7 KM41C4000CL-8 - KM41C4002C-5 KM41C4002C-6 KM41C4002C-7 KM41C4002C-8 - KM41V4000C-6 KM41V4000C-7 KM41V4000C-8 - KM41V4000CL-6

km44c1003cj

Contextual Info: DRAM MODULE KMM5361203AW/AWG KMM5361203AW/AWG Fast Page Mode 1Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM5361203AW is a 1M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5361203AW consists of two CMOS

Contextual Info: PRELIMINARY CMOS SRAM KM64V4002B/BL, KM64V4002BI/BLI Document Title 1Mx4 Bit with OE High Speed Static RAM(3.3V Operating), Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark

44-TSOP2

Abstract: K6R4004C1D
Contextual Info: PRELIMINARY CMOS SRAM K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM 5.0V Operating . Operated at Commercial and Industrial Temperature Ranges. Revision History Rev No. History Rev. 0.0 Initial release with Preliminary. September. 7. 2001 Preliminary

Contextual Info: HY514400B Series - H Y U N D A I 1Mx4-bit CMOS DRAM DESCRIPTION The HY514400B is the new generation and fast dynamic RAM organized 1,048,576 x 4-bit. The HY514400B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide

A19T

Contextual Info: Prelim inary CMOS SRAM KM 64V4002B/BL, KM 64V4002B/BLI D o cu m e n t Title 1Mx4 Bit with OE High Speed Static RAM (3.3V Operating), Revolutionary Pin out. Operated at Com m ercial and Industrial Tem perature Range. R evision H istory Draft Data R em ark