STANFORD AMPLIFIER Search Results

Contextual Info: ßäf Stanford M icrodevices SCA-1 Product Description Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. 0.3-3 GHz, Cascadable

Contextual Info: 3 Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET M MIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable

Contextual Info: Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate M ESFET process. 0.3-3 GHz, Cascadable GaAs MMIC Amplifier

LM 344 IC

Abstract: LM 344 H pin for lm 339 ic cy 5103
Contextual Info: ¿3 Stanford Microdevices Product Description SCA-1 Stanford M icrodevices’ SCA-1 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of

Contextual Info: EJ Stanford Microdevices Product Description SCA-11 Stanford M icrodevices’ SCA-11 is a high perform ance Gallium Arsenide M ESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This am plifier is internally m atched with typical VSW R of

sna476tr1

Abstract: sna4 sna476
Contextual Info: Stanford Microdevices Product Description SNA-476 Stanford Microdevices' SNA-476 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline ceramic package. This amplifier provides 13dB of gain when biased at 70mA and 5.0V.

Contextual Info: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of

Contextual Info: IO Stanford Microdevices Product Description SCA-14 Stanford M icrodevices’ SCA-14 is a high performance Gallium Arsenide Hetrojunction Bipolar Transistor M MIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: Stanford Microdevices Product Description SMM-208 Stanford Microdevices' SM M -208 is a gallium arsenide monolithio-microwave-integrated circuit M M IC amplifier housed in a low cost, surface-mountable ceramic package. Designed for operation in w ireless system s

Contextual Info: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of

Contextual Info: 3 Stanford Microdevices Product Description SCA-5 Stanford M icrodevices’ SCA-5 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: i Stanford Microdevices Product Description SCA-16 Stanford M icrodevices’ SCA-16 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: É0 Stanford Microdevices Product Description SNA-586 Stanford Microdevices’ SNA-586 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surfacemountable plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V.

Contextual Info: Stanford Microdevices Product Description SMM-280-4 Stanford Microdevices' SMM-280-4 is a gallium arsenide monolithic-microwave-integrated circuit MMIC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 4 Watt GaAs MMIC Amplifier

188-114 DB 25 pin out

Abstract: 120C AX RF amplifier IC
Contextual Info: Product Description SCA-1 Stanford Microdevices’ SCA-1 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of

100C

Abstract: SCA-11
Contextual Info: Product Description SCA-11 Stanford Microdevices’ SCA-11 is a high performance Gallium Arsenide MESFET MMIC Amplifier. This device is fabricated using Stanford’s reliable 0.5 micron gate MESFET process. This amplifier is internally matched with typical VSWR of

Contextual Info: èSl Stanford Microdevices SCA-15 Product Description Stanford M icrodevices’ SCA-15 is a high perform ance Galliu Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases

Contextual Info: Stanford Microdevices Product Description SNA-387 Stanford Microdevices1 SNA-387 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 21 dB of gain when biased at 35mA and 4V. DC-3 GHz, Cascadable

Contextual Info: § Stanford Microdevices Product Description SMM-280-2 Stanford Microdevices’ SM M -280-2 is a gallium arsenide monolithic-microwave-integrated circuit M M IC amplifier housed in a copper-tungsten package for efficient heat transfer. 1.5-2.7 GHz, 2 Watt

Contextual Info: ßäf Stanford M icrodevices Product Description SCA-16 Stanford M icrodevices’ SCA-16 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perform ance up to 3 GHz. The heterojunction increases

SNA-587

Abstract: ic 7710 SNA-587-TR1
Contextual Info: Stanford Microdevices Product Description SNA-587 Stanford Microdevices’ SNA-587 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost drop-in plastic package. This amplifier provides 19dB of gain when biased at 80mA and 5.0V, DC-3 GHz, Cascadable

Contextual Info: Stanford Microdevices Product Description SCA-6 Stanford M icrodevices’ SCA-6 is a high perform ance Gallium Arsenide Hetrojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband perfor­ mance up to 3 GHz. The heterojunction increases break­

SNA-276

Contextual Info: gO Stanford Microdevices Product Description SNA-276 Stanford Microdevices’ SNA-276 is a GaAs monolithic broadband amplifier MMIC housed in a low-cost surface mountable stripline package. This amplifier provides 16dB of gain when biased at 50mA and 4V.

SNA-576

Contextual Info: Stanford Microdevices Product Description SNA-576 Stanford Microdevices' SNA-576 is a GaAs monolithic broadband amplifier housed in a tow-cost stripline ceramic package. This amplifier provides 19dB of gain when biased at 70mA and 5.0V, DC-3 GHz, Cascadable