Untitled
Abstract: No abstract text available
Text: SBA-5089 Z SBA-5089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-89 Product Description Features RFMD’s SBA-5089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5089
OT-89
areA-5089
SBA5089â
SBA5089Zâ
SBA-5089Z
SBA-5089
EDS-102743
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Untitled
Abstract: No abstract text available
Text: SGA-4563 Z SGA-4563(Z) DC to 2500MHz, Cascadable SiGe HBT MMIC Amplifier DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description Features The SGA-4563 is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA-4563
2500MHz,
OT-363
31mil
DS091118
SGA-4563
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SGB-2233Z
Abstract: SGB-2233
Text: SGB-2233 Z DC to 4.5GHz Active Bias Gain Block SGB-2233(Z) Preliminary DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-2233
16-Pin
SGB-2233
SGB2233"
SGB22Z"
SGB-2233Z
SGB-2233Z
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SGB-6433Z
Abstract: SGB-6433
Text: SGB-6433 Z SGB-6433(Z) DC to 3.5GHz ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-6433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-6433
16-Pin
SGB6433"
SGB64Z"
SGB-6433Z
SGB-6433
SGB-6433Z
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pseudomorphic HEMT
Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm
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FPD6836SOT343
FPD6836SOT3
OT343
FPD6836SOT343
mx750
1850MHz)
18dBm
2002/95/EC)
FPD6836SOT343E
FPD6836SOT343E-AG
pseudomorphic HEMT
TRANSISTOR c 5578 B
TRANSISTOR BC 135
0604HQ
OT343
3.5GHz BJT
bc 548 transistor
transistor bc 731
transistor bc 564
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet Product Description Sirenza Microdevices’ SGB-2233 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to
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SGB-2233
SGB-2233
SGB-2233Z
EDS-103079
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FPD750SOT89
Abstract: BC 148 TRANSISTOR DATASHEET SSG 23 TRANSISTOR TRANSISTOR BC 135 FPD750SOT89E
Text: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD750SOT89
25dBm
39dBm
FPD750SOT89
25mx1500m
FPD750SOT89E:
FPD750SOT89CE-BC
FPD750SOT89CE-BE
FPD750SOT89CE-BG
BC 148 TRANSISTOR DATASHEET
SSG 23 TRANSISTOR
TRANSISTOR BC 135
FPD750SOT89E
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2.4GHz amplifier schematic
Abstract: FPD750SOT89 EB750SOT89BG 26GHz LNA
Text: EB750SOT89BG FPD750SOT89 2.4GHz to 2.6GHz LNA EVALUATION BOARD FEATURES Frequency GHz P1dB (dBm) SSG (dB) N.F. (dB) OIP3 (dBm) Bias 2.4 24.3 15.4 0.95 34.0 2.5 24.3 15.2 0.95 35.0 5V, 100mA 2.6 24.4 15.0 1.0 34.0 DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, power amplifier. It is reactively
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EB750SOT89BG
FPD750SOT89
100mA
FPD750SOT89;
30mil
31mil
2.4GHz amplifier schematic
EB750SOT89BG
26GHz LNA
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BF5Z
Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar
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SBF-5089
500MHz,
OT-89
EDS-103413
SBF5089"
SBF5089Z"
BF5Z
hemt Ee
marking ee hemt
SBF 5089
SBF5089
SBF-5089Z
SBF50
sbf5089z
marking code 827 sot89
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0603 footprint IPC
Abstract: FPD3000 TRANSISTOR BC 157 FPD3000SOT89 FPD3000SOT89E
Text: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky
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FPD3000SOT89
FPD3000SOT8
30dBm
45dBm
FPD3000SOT89
25mx1500m
FPD3000SOT89E:
FPD3000SOT89CE-BD
FPD3000SOT89CE-BE
FPD3000SOT89CE-BG
0603 footprint IPC
FPD3000
TRANSISTOR BC 157
FPD3000SOT89E
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FPD750SOT89
Abstract: No abstract text available
Text: EB750SOT89BA FPD750SOT89 1.85GHz LNA EVALUATION BOARD FEATURES • 24dBm Output Power • 17.5dB Gain ¥ 0.7dB Noise Figure ¥ 35dBm IP3 @ 10dBm Pout per Tone ¥ Bias 5V, 100mA DESCRIPTION AND APPLICATIONS This evaluation board is a single-ended, dual biased, low noise amplifier. It is reactively
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EB750SOT89BA
FPD750SOT89
85GHz
24dBm
35dBm
10dBm
100mA
85GHz.
FPD750SOT89.
30mil
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SBA-5086
Abstract: BA5 Amplifier sba-5086z sba5086z
Text: SBA-5086 Z SBA-5086(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number) Package: SOT-86 Product Description Features RFMD’s SBA-5086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-5086
OT-86
SBA-5086
SBA-5086Z
EDS-102742
BA5 Amplifier
sba-5086z
sba5086z
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BA4Z
Abstract: sba4089 SBA-4089 sba-4089z InP transistor HEMT sot 163 Package
Text: SBA-4089 Z SBA-4089(Z) DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5GHz with excellent thermal
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SBA-4089
OT-89
Matching-5570
SBA4089"
SBA4089Z"
SBA-4089Z
SBA-4089
BA4Z
sba4089
sba-4089z
InP transistor HEMT
sot 163 Package
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Untitled
Abstract: No abstract text available
Text: Advanced Information Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam
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SZA-6044
SZA-6044
SZA-6044"
EDS-103535
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Untitled
Abstract: No abstract text available
Text: SCA-7 Product Description DC-3 GHz, Cascadable GaAs HBT MMIC Amplifier Sirenza Microdevices SCA-7 is a high performance Gallium Arsenide Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration is utilized for broadband performance up to 3 GHz. The heterojunction increases breakdown
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24dBm.
12dBm
EDS-102422
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4533
Abstract: No abstract text available
Text: Product Description Sirenza Microdevices’ SGB-4533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to 5V supply
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SGB-4533
SGB-4533"
EDS-103091
4533
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SZA-6044
Abstract: digital 5.1 amplifier diagram schematic 55ghz
Text: Preliminary Product Description Sirenza Microdevices’ SZA-6044 is a high linearity Class A GaAs Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam
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SZA-6044
SZA-6044
SZA-6044"
EDS-103535
digital 5.1 amplifier diagram schematic
55ghz
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simple circuit diagram of electronic choke
Abstract: SGB-4533 SGB-4533Z 4533 marking 45z
Text: Product Description Sirenza Microdevices’ SGB-4533 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V to
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SGB-4533
SGB-4533
SGB-4533Z
EDS-103091
simple circuit diagram of electronic choke
SGB-4533Z
4533
marking 45z
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Untitled
Abstract: No abstract text available
Text: SGA5289Z SGA5289ZDC to 5000MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SGA5289Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and
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SGA5289Z
SGA5289ZDC
5000MHz,
OT-89
SGA5289Z
DS111014
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Untitled
Abstract: No abstract text available
Text: SBA4086Z SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description Features RFMD’s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to
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SBA4086Z
OT-86
SBA4086Z
SBA4086ZSQ
SBA4086ZPCK1
SBA4086ZSR
850MHz,
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Untitled
Abstract: No abstract text available
Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal
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SBF5089Z
SBF5089ZDC
500MHz,
OT-89
SBF5089Z
DS111011
SBF5089ZSQ
SBF5089ZSR
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Untitled
Abstract: No abstract text available
Text: SGB-2433 Z DC to 4GHz Active Bias Gain Block SGB-2433(Z) Preliminary DC to 4GHZ ACTIVE BIAS GAIN BLOCK RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: 3x3 QFN, 16-Pin Product Description Features RFMD’s SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides
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SGB-2433
16-Pin
SGB2433â
SGB24Zâ
SGB-2433Z
SGB-2433
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Untitled
Abstract: No abstract text available
Text: SBW-5089 Z SBW-5089(Z) DCto8GHz Cascadable InGaP/GaAs HBT MMIC Amplifier DCto8GHz CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features The SBW-5089(Z) is a high performance InGaP/GaAs HBT MMIC Amplifier. A Darlington circuit fabricated with InGaP process technology provides broadband RF performance up to 8GHz and excellent thermal performance. The heterojunction
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SBW-5089
OT-89
SBW5089â
SBW5089Zâ
SBW-5089Z
DS091130
SBW-5089
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3VR24,A,B
Abstract: max2630 IP3 MARK AABl MAX2630EUS-T MAX2631EUK-T MAX2632EUK-T MAX2633 MAX2633EUT-T Transistor AAAA SOT23
Text: 19-1181; Rev 2; 8/03 VHF-to-Microwave, +3V, General-Purpose Amplifiers _Applications Global Positioning Systems Cellular Phones Wireless Local Area Networks ISM Radios Wireless Local Loops TV Tuners Land Mobile Radios Set-Top Boxes _Typical Operating Circuit
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MAX2632/MAX2633)
MAX2631/MAX2633)
MAX2630EUS-T
OT143-4
MAX2631EUK-T
MAX2632EUK-T
MAX2633EUT-T
OT23-5
OT23-6
3VR24,A,B
max2630
IP3 MARK
AABl
MAX2630EUS-T
MAX2633
Transistor AAAA SOT23
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