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    SRAM 68100 Search Results

    SRAM 68100 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    R1LV0408DSP-7LR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1WV3216RBG-7SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0816ASD-5SI#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    R1LV0408DSP-5SR#S0 Renesas Electronics Corporation Low Power SRAM Visit Renesas Electronics Corporation
    7MP4060-000 Renesas Electronics Corporation SRAM MODULE Visit Renesas Electronics Corporation

    SRAM 68100 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLI/BLI-L CMOS SRAM 128Kx8 Bit Industrial Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Tem perature Range : -40 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power D issipation Standby (CMOS) : 550^W (Max.)L-Ver.


    OCR Scan     		KM681000BLI/BLI-L 128Kx8 385mW KM681000BLGI/BLGI-L 32pin 525mil) 681000BLTI/BLTI-L 0820F) KM681000BLRI/BLRI-L PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.


    OCR Scan     		KM681000BLE 128Kx8 550nW 275pW 385mW KM681000BLGE/BLGE-L 32-pin 525mil) KM681000BLTE/BLTE-L PDF

    A13CH

    Abstract: km6810008 A12CZ KM681000BLI km6810008l
    Text: CMOS SRAM KM681000BLI / BLI-L 128Kx8 Bit Industrial Temperature Range Operating SRAM GENERAL DESCRIPTION FEATURES • Industrial Tem perature R ange : -40 to 8 5°C • Fast Access Tim e : 7 0 ,1 0 0 ns M ax. • Low Pow er Dissipation Standby (C M O S ) : 5 5 0 pW (M ax.)L -V er.


    OCR Scan     		KM681000BLI 128Kx8 550pW 385mW KM681000BLGI/BLG 32pin 525mil) KM681000BLTI/BLTI-L 0820F) A13CH km6810008 A12CZ km6810008l PDF

    68 1103

    Abstract: KM681000BL A14F
    Text: CMOS SRAM KM681000BL / L-L 128Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION The KM 681000BUBL-L is a 1,048,576-bit high-speed Static Random Access Memory organized as131,072 words by 8 bits. The device is fabricated using Samsung's advanced


    OCR Scan     		KM681000BL 128Kx8 385mW KM681OOOBLP/BLP-L 600mil) KM681000BLG/BLG-L: 525mil) KM681OOOBLT/BLT-L 0820F) KM681000BLR/BLR-L: 68 1103 A14F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM O S) : 2mA (max.) Operating KM681001P/J-20: 170m A (max.) K M 681001P/J-25: 150mA (max.)


    OCR Scan     		KM681001 KM681001P/J-20: 681001P/J-25: 150mA KM681001P/J-35: 681001P: 32-pin 681001J: PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM The KM681002 is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by 8 bits. The KM 681002 uses eight com m on input and output lines and has an output enable pin w hich operates


    OCR Scan     		KM681002 KM681002-17 KM681002-20 681002J: 32-SQJ-400 KM681002 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002B, KM681002BI CMOS SRAM Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Remark Rev No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		KM681002B, KM681002BI 128Kx8 32-SOJ-300 8/10/12ns 160/150/140mA 160/155/150mA PDF

    681000CLP

    Abstract: P55n 681000C 2U27 0-00C M681000CL
    Text: Advance Information KM681000C Family CMOS SRAM 128Kx8 bit Low Power CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 uM CMOS • Organization : 128Kx8 • Power Supply Voltage : Single 5V +/-10% The KM681000C family is fabricated


    OCR Scan     		KM681000C 128Kx8 128Kx8 32-DIP, 32-SOP, 32-TSOP KM681000CL 681000CLP P55n 681000C 2U27 0-00C M681000CL PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002C/CL, KM681002CI CLI PRELIMINARY CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		KM681002C/CL, KM681002CI 128Kx8 32-SOJ-400 32-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002A, KM681002AI CMOS SRAM Document T itle 128Kx8 High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		KM681002A, KM681002AI 128Kx8 12/15/17/20ns 200/190/180/170mA 170/165/165/160mA 32-Pin PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM681002C/CL, KM681002CI/CLI CMOS SRAM Document Title 128Kx8 Bit High-Speed CMOS Static RAM 5V Operating Operated at Commercial and Industrial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial Draft Draft Data Aug. 5. 1998


    OCR Scan     		KM681002C/CL, KM681002CI/CLI 128Kx8 32-SOJ-400 32-TSOP2-400F I0-050I PDF

    cs1g

    Abstract: No abstract text available
    Text: KM681000ALI/ALI-L CM O S SRAM 131,072 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range: - 4 0 to 85°C The KM 681000ALI/ALI-L is a 1,048,576-bit high-speed S ta tic R and o m A c c e s s M em ory o rganized as 131,072


    OCR Scan     		KM681000ALI/ALI-L 100ns 110mW KM681000ALPI/ALPI-L: 32-pin 600mil) KM681000ALGI/ALGI-L: 525mil) 681000ALI/ALI-L cs1g PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. The KM681001 Is a 1,048,576-bit • Low Power Dissipation Random Access Memory organized as 131,072 words Standby (TTL) : 40 mA(Max.)


    OCR Scan     		KM681001 128Kx KM681001 576-bit PDF

    cm 324

    Abstract: KM681002A KM681002A-12 KM681002A-15 KM681002A-20 74114
    Text: PRELIMINARY CMOS SRAM KM681002A 128K x 8 Bit High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time 12,15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681002A-12 : 200 mA (Max.)


    OCR Scan     		KM681002A KM681002A-12 KM681002A-15 KM681002A-17 KM681002A-20 KM681002AJ 32-SOJ-400 KM681002AT 32-TSOP2-400F KM681002A cm 324 KM681002A-12 KM681002A-15 KM681002A-20 74114 PDF

    KM681001ASJ

    Abstract: No abstract text available
    Text: KM681001A CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. H is to ry Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		KM681001A 128Kx8 15/17/20ns 190/180/170mA 12/12/13ns 8/9/10ns June-1997 KM681001ASJ PDF

    KM681002A

    Abstract: KM681002A-12 KM681002A-15 KM681002A-20
    Text: ADVANCED INFORMATION CM O S SRAM KM681002A 131,072 WORDx8 Bit High-Speed CMOS Static RAM FEATURES • Fast Access Time : 1 2 ,1 5 ,1 7 ,20ns max. • Low Power Dissipation Standby (TTL) : 20mA (max.) (CMOS) : 3mA (max.) Operating : KM681002A-12 : 185mA (max.)


    OCR Scan     		KM681002A KM681002A-12 185mA KM681002A-15 165mA KM681002A-17 145mA KM681002A-20 125mA KM681002AJ KM681002A KM681002A-12 KM681002A-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002B, KM681002BI CMOS SRAM Document Title 128Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History R ev. 0.0 Initial re le a s e w ith D esign T a rge t.


    OCR Scan     		KM681002B, KM681002BI 128Kx8 32-SOJ-400 32-TSOP2-400F PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681000B Family CMOS SRAM Document Title 128K x8 bit Low Power CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft for com m ercial product - Com mercial Product only O ctober 28th, 1992 Prelim inary 0.1 - Initial draft for Extended/Industrial Product


    OCR Scan     		KM681000B 0820F) 0820R) PDF

    KM681001P

    Abstract: cs-113-1 KM681001-35 KM681001-25
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CMOS) : 2mA (max.) Operating KM681001P/J-20: 170mA (max.) KM681001P/J-25: 150mA (max.)


    OCR Scan     		KM681001 KM681001P/J-20: 170mA KM681001P/J-25: 150mA KM681001P/J-35: 130mA KM681001P: 32-pin 400mil) KM681001P cs-113-1 KM681001-35 KM681001-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681002A, KM681002AI CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15, 20ns Max. • Low Power Dissipation Standby (TO .) : 25mA(Max.) (CMOS) : 8mA(Max.) Operating KM681002A -1 2 : 170mA(Max.) KM681002A -1 5 : 165mA(Max.)


    OCR Scan     		KM681002A, KM681002AI KM681002A 170mA 165mA 160mA KM681002AJ: 32-SOJ-400 PDF

    Untitled

    Abstract: No abstract text available
    Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) The KM681001 is a 1,048,576-bit high-speed Static Random Access Memory organized as 131,072 words


    OCR Scan     		KM681001 KM681001 576-bit 170mA KM681001-25 PDF

    KM681001J

    Abstract: KM681001-35 KM681001
    Text: KM681001 CMOS SRAM 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Tim e 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40m A (max.) (CMOS) : 2mA (max.) Operating KM681001 -20 : 1 70mA(max.) KM681001 - 2 5 : 150mA(max.)


    OCR Scan     		KM681001 128KX8 KM681001 170mA 150mA KM681001-35 130mA KM681001P 32-DIP-400 KM681001J PDF

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM681001 1 2 8 K X 8 Bit High-Speed Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35ns max. • Low Power Dissipation Standby (TTL) : 40mA (max.) (CM OS): 2mA (max.) Operating KM6S1001P/J-20:170mA (max.) KM081001P/J-25:150mA (max.)


    OCR Scan     		KM681001 KM6S1001P/J-20 170mA KM081001P/J-25 150mA KM681001P/J-35 130mA KM681001P: 32-pln 400mil) PDF