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    Samsung Semiconductor KM681001AJ-20

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    Bristol Electronics KM681001AJ-20 62
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    Quest Components KM681001AJ-20 17
    • 1 $24.71
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    Samsung Semiconductor KM681001AJ-15

    IC,SRAM,128KX8,CMOS,SOJ,32PIN,PLASTIC
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    Quest Components KM681001AJ-15 38
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    SEC KM681001AJ-20

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    ComSIT USA KM681001AJ-20 283
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    SEC KM681001AJ-15

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    Samsung Semiconductor KM681001AJ20

    128K X 8 BIT HIGH-SPEED CMOS STATIC RAM Standard SRAM, 128KX8, 20ns, CMOS, PDSO32
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    KM681001A Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM681001A Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681001A-15 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF
    KM681001A-20 Samsung Electronics 128K x 8 Bit High-Speed CMOS Static RAM Original PDF

    KM681001A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM681001AJ

    Abstract: KM681001A KM681001A-15 KM681001A-20
    Text: PRELIMINARY CMOS SRAM KM681001A Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target


    Original     		PDF KM681001A 128Kx8 15/17/20ns 190/180/170mA 32-SOJ-400 KM681001AJ KM681001A KM681001A-15 KM681001A-20

    300mil-SOJ

    Abstract: KM681001A KM681001A-15 KM681001A-20 KM681001AJ 32SOJ
    Text: PRELIMINARY CMOS SRAM KM681001A Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target


    Original     		PDF KM681001A 128Kx8 15/17/20ns 190/180/170mA 32-SOJ-400 300mil-SOJ KM681001A KM681001A-15 KM681001A-20 KM681001AJ 32SOJ

    ionograph

    Abstract: 32256LK KM681001AJ SYS32128LK-020 ANH004 KM641001AJ
    Text: Hybrid Memory Products Ltd SRAM Module Mean Time Between Failure Analysis MTBF Introduction In general terms, the reliability of any plastic module assembly can be assessed by dividing the assembly into 4 critical areas - active devices, passive devices,


    Original     		PDF SYS32128LK-020 ionograph 32256LK KM681001AJ ANH004 KM641001AJ

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    UM61256AK-15

    Abstract: UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM FLASH MICROCONTROLLER SERIAL FLASH JULY 1998 Integrated Silicon Solution, Inc. CP005-1E 7/1/98 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1E AS7C1024-12JC AS7C1024-12PC AS7C1024-12TJC AS7C1024-12TPC AS7C1024-15JC AS7C1024-15PC AS7C1024-15TJC AS7C1024-15TPC AS7C1024-20JC UM61256AK-15 UM61256ak sram um61256ck-20 HY62256ALP10 XL93LC46AP w24m257 GVT7164D32Q-6 km62256blg-7 w24m257ak-15 UM61256

    um61256ak-15

    Abstract: w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257
    Text: ISSI Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM/NVM Serial EEPROM EPROM FLASH Static RAM SEPTEMBER 1996 CROSS REFERENCE GUIDE E2PROM ATMEL ISSI MIL PACKAGE SYMBOL PC P SC G SC GR AT93C46-10PC AT93C46-10PC-2.7 AT93C46-10SC AT93C46-10SC-2.7


    Original     		PDF AT93C46-10PC AT93C46-10PC-2 AT93C46-10SC AT93C46-10SC-2 AT93C46R-10SC AT93C46R-10SC-2 AT93C46W-10SC AT93C46W-10SC-2 AT93C56-10PC AT93C56-10PC-2 um61256ak-15 w24m257ak-15 um61256 um61256ck-20 um61256ak-12 km62256blg-7 KM68257Bp-20 W24M257AK HY6264ALP-10 w24M257

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


    Original     		PDF 74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624

    KM681001A

    Abstract: KM681001A-15 KM681001A-20
    Text: PRELIMINARY KM681001A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION > F a st A cce ss T im e 1 5,1 7,20 n s M ax. • Low P o w e r D issip a tio n S ta n d by (T T L) : 3 0 m A (M a x.) (C M O S ): 10 m A (M ax.) O p e ra tin g K M 6 8 1 0 0 1 A -1 5 : 190 m A (M a x.)


    OCR Scan     		PDF KM681001A 128Kx KM681001A-15 KM681001A-17 KM681001A-20 681001AJ: 32-SOJ-4QO KM681001A 576-bit KM681001A-15 KM681001A-20

    KM681001A

    Abstract: KM681001A-15 KM681001A-20 KM681001AJ D0237
    Text: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. .• Low Power Dissipation Standby (TTL) The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by


    OCR Scan     		PDF KM681001A 128Kx KM681001A-15 KM681001A-17 KM681001A-20 KM681001AJ 32-SOJ-40Q KM681001A 576-bit KM681001A-15 KM681001A-20 KM681001AJ D0237

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM681001A CMOS SRAM 1 2 8 K x 8 B it High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation Standby (TTL) : 30 mA(Max.) (CMOS): 10 mA(Max.) Operating KM681001A-15 :190 mA (Max.)


    OCR Scan     		PDF KM681001A KM681001A-15 KM681001A-17 KM681001A-20 KM681001AJ 32-SQJ-400 KM681001A 576-bit 002147T

    Untitled

    Abstract: No abstract text available
    Text: KM681001A CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns Max. • Low Power Dissipation The KM681001A is a 1,048,576-bit high-speed static random access memory organized as 131,072 words by


    OCR Scan     		PDF KM681001A KM681001A 576-bit KM681001A-15 KM681001A-17 KM681001A-20 GG23777

    Untitled

    Abstract: No abstract text available
    Text: KM681001A CMOS SRAM 128Kx 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,20ns Max. • Low Power Dissipation Standby (T U ) : 25mA(Max.) (CMOS) : BmA(Max ) Operating KM681001A - 1 5 :125mA(Max.) KM681001A - 20 : 120mA(Max.)


    OCR Scan     		PDF KM681001A 128Kx KM681001A 125mA 120mA KM681001AJ 32-SOJ-400 576-bit

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAMI KM681001A Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. History Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM681001A 128Kx8 15/17/20ns 190/180/170mA 32-SOJ-400

    KM681001ASJ

    Abstract: No abstract text available
    Text: KM681001A CMOS SRAM Document Title 128Kx8 High Speed Static RAM 5V Operating , Evolutionary Pin Out. Operated at Commercial Temperature Range. Revision History Rev. No. H is to ry Rev. 0.0 Initial release with Design Target. Jan. 18th, 1995 Design Target Rev. 1.0


    OCR Scan     		PDF KM681001A 128Kx8 15/17/20ns 190/180/170mA 12/12/13ns 8/9/10ns June-1997 KM681001ASJ

    01-I04

    Abstract: KM641001A KM641001A-15 KM641001A-20
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 B it With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation Standby (TTL) The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A-15 KM641001A-17 KM641001A-20 KM641001AJ 28-SQJ-400 KM641001A 576-bit OOPm53 01-I04 KM641001A-15 KM641001A-20

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM641001A CMOS SRAM 256K x 4 Bit With OE High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast A ccess Time 15,17,20 ns(Max.) The KM641001A is a 1,048,576-bit high-speed Static • Low Power Dissipation Standby (TTL) Random Access Memory organized as 262,144 words


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 41001A-20

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    soj 36

    Abstract: SOJ 44 KM68257
    Text: MEMORY ICS 3. FUNCTION GUIDE 5V CMOS Fast SRAM Power Dissipation Den. Part Name 256K IM Speed ns Tech. Active Max(mA) Standby Max(mA) Package 28 DI P/SO J KM64258C 64Kx4 12/15/20 CMOS 150 2 KM68257C 32Kx8 12/15/20 CMOS 165 2 28 DIP/SOJ KM641001 256Kx4 20/25/35


    OCR Scan     		PDF KM64258C KM68257C 64Kx4 32Kx8 256Kx4 128Kx8 soj 36 SOJ 44 KM68257

    Untitled

    Abstract: No abstract text available
    Text: CM OS SRAM KM681001 A D o s u m e n t IB tie 1 2 8 K x 8 Hi gh S p e e d St at i c R A M 5 V O p e r a t i n g , E v o l u t i o n a r y Pin Out . O p e ra ted at C o m m e r c i a l T e m p e r a t u r e R an ge. Rev. No. History Rev. 0.0 Initial release with Design Target.


    OCR Scan     		PDF KM681001 15/17/20ns 190/180/170mA