HM-6516-5
Abstract: HM-6516 HM6516
Text: HARRIS SEMICOND SECTOR ‘ÌS D E j M30ES71 DOlDYOb v T-46-23-1Z H M -6516 h a r r is 2K x 8 CMOS RAM Features Pinouts TOP VIEW • Low Power Standby. 275pW/MHz Max. • • • • • • • • • Low Power O .
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T-46-23-1Z
HM-6516
55mW/MHz
120/200ns
HM-6516-5.
HM-6516-9.
HM-6516-8.
HM-6516-5
HM6516
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MB8416A-15
Abstract: MB8416A-12L 24LAA tc5517 B8416A-16 MB8416A MB8416A-12/15
Text: FUJITSU MICROELECTRONICS 7fl D Ë J 37MT7L.2 00033D2 3 | ~ - 3749762 FUJITSU MICROELECTRONICS M O S • M e m 78C 03302 D< T-46-23-12 FU JITSU o r ie s M B 8 4 1 6 A - 1 2 , M B 8 4 1 6 A - 1 2 L , M B 8 4 1 6 A - 1 5 , M B 8 4 1 6 A - 1 5 L CM OS 16,384-Bit
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37MT7L
00033D2
--78C
T-46-23-12
384-Bit
MB8416A
2048-word
B8416A-12
B8416
MB8416A-15
MB8416A-12L
24LAA
tc5517
B8416A-16
MB8416A-12/15
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Untitled
Abstract: No abstract text available
Text: KM681000BLE / BLE-L CMOS SRAM 128Kx8 Bit Extended Temperature Range Operating SRAM FEATURES GENERAL DESCRIPTION • Extended Temperature Range : -25 to 85°C • Fast Access Time : 70,100 ns Max. • Low Power Dissipation Standby (CM O S): 550nW(Max.)L-Ver.
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KM681000BLE
128Kx8
550nW
275pW
385mW
KM681000BLGE/BLGE-L
32-pin
525mil)
KM681000BLTE/BLTE-L
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mb8417
Abstract: tc5516 MB8417A-12 MB8417A-12L MB8417A-15 MB8417A-15L
Text: FUJITSU MOS Memories • M B 8 4 1 7 A - 1 2 , M B 8 4 1 7 A - 1 2 L , M B 8 4 1 7 A - 1 5 , M B 8 4 1 7 A - 1 5 L CMOS 16,384-Bit Static Random Access Memory Description The F u jits u M B8417A is a 2048-w ord by 8 -b it s ta tic ra n d o m a c ce s s m e m o ry fa b ric a te d w ith C M O S s itic o n g a te pro c e s s . The
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MB8417A-12,
MB8417A-12L,
MB8417A-15,
MB8417A-15L
384-Bit
MBB417A
2048-word
MB8417A
24-Laad
DIP-24C-C03
mb8417
tc5516
MB8417A-12
MB8417A-12L
MB8417A-15
MB8417A-15L
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MB8416A-15
Abstract: MB8416A-15L MB8416A-12 TC5517 MB8416A-12L MB8416A
Text: F U JIT S U MOS Memories • M B8416A-12, M B8416A-12L, M B8416A-15, M B8416A-15L CMOS 16,384-Bit Static Random Access Memory D escription The Fujitsu MB8416A Is a 2048-word by 8-bit s ta tic random a c c e ss memory fabricated with C M O S silico n gate process. The
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B8416A-12,
B8416A-12L,
B8416A-15,
B8416A-15L
384-Bit
MB8416A
2048-word
B8416A-12
B8418A-12L
MB8416A-15
MB8416A-15L
MB8416A-12
TC5517
MB8416A-12L
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Untitled
Abstract: No abstract text available
Text: F U J IT S U MOS M em ories • M B 8 4 1 7 A -1 2 , M B 8 4 1 7 A -1 2 L , M B 8 4 1 7 A -1 5 , M B 8 4 1 7 A -1 5 L CMOS 16,384-Bit Static Random Access Memory D escription The Fujitsu MBB417A is a 2048-word by 8-bit static random ac cess memory fabricated with CMOS silicon gate process. The
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384-Bit
MBB417A
2048-word
MB8417A
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