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    SPD0 Price and Stock

    Infineon Technologies AG SPD03N60C3ATMA1

    MOSFET N-CH 600V 3.2A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD03N60C3ATMA1 Reel 15,000 2,500
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    Avnet Americas SPD03N60C3ATMA1 Reel 5,000 15 Weeks 2,500
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    Verical SPD03N60C3ATMA1 17,500 14
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    • 100 $0.7063
    • 1000 $0.5399
    • 10000 $0.4663
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    SPD03N60C3ATMA1 17,500 2,500
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    SPD03N60C3ATMA1 12,500 2,500
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    Arrow Electronics SPD03N60C3ATMA1 17,500 15 Weeks 2,500
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    SPD03N60C3ATMA1 17,500 1
    • 1 $1.3629
    • 10 $0.9619
    • 100 $0.7063
    • 1000 $0.5399
    • 10000 $0.4663
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    SPD03N60C3ATMA1 12,500 15 Weeks 2,500
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    Rochester Electronics SPD03N60C3ATMA1 54 1
    • 1 $0.5529
    • 10 $0.5529
    • 100 $0.5197
    • 1000 $0.47
    • 10000 $0.47
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    Ameya Holding Limited SPD03N60C3ATMA1 8,053
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    EBV Elektronik SPD03N60C3ATMA1 2,500 16 Weeks 2,500
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    IBS Electronics SPD03N60C3ATMA1 2,500
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    New Advantage Corporation SPD03N60C3ATMA1 2,500 1
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    Vyrian SPD03N60C3ATMA1 12,003
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    Infineon Technologies AG SPD08P06PGBTMA1

    MOSFET P-CH 60V 8.83A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD08P06PGBTMA1 Reel 5,000 2,500
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    Mouser Electronics SPD08P06PGBTMA1 99,220
    • 1 $0.66
    • 10 $0.555
    • 100 $0.413
    • 1000 $0.29
    • 10000 $0.258
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    Rochester Electronics SPD08P06PGBTMA1 12,686 1
    • 1 $0.2763
    • 10 $0.2763
    • 100 $0.2597
    • 1000 $0.2349
    • 10000 $0.2349
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    TME SPD08P06PGBTMA1 1
    • 1 $0.642
    • 10 $0.513
    • 100 $0.388
    • 1000 $0.308
    • 10000 $0.287
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    Chip One Stop SPD08P06PGBTMA1 Cut Tape 2,480 0 Weeks, 1 Days 5
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    • 100 $0.268
    • 1000 $0.195
    • 10000 $0.186
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    EBV Elektronik SPD08P06PGBTMA1 11 Weeks 2,500
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    IBS Electronics SPD08P06PGBTMA1 2,500
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    New Advantage Corporation SPD08P06PGBTMA1 5,000 1
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    Win Source Electronics SPD08P06PGBTMA1 25,001
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    Infineon Technologies AG SPD04N50C3ATMA1

    MOSFET N-CH 500V 4.5A TO252-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SPD04N50C3ATMA1 Cut Tape 4,476 1
    • 1 $1.5
    • 10 $1.112
    • 100 $0.8962
    • 1000 $0.65514
    • 10000 $0.65514
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    SPD04N50C3ATMA1 Digi-Reel 4,476 1
    • 1 $1.5
    • 10 $1.112
    • 100 $0.8962
    • 1000 $0.65514
    • 10000 $0.65514
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    SPD04N50C3ATMA1 Reel 2,500 2,500
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    EBV Elektronik SPD04N50C3ATMA1 16 Weeks 2,500
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    TE Connectivity 2MM-HSP-D03-VT-02-H-TB

    6P, AMPMODU 2 MM, SHROUDED HEADE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2MM-HSP-D03-VT-02-H-TB Tube 2,826 1
    • 1 $1.51
    • 10 $1.51
    • 100 $1.12353
    • 1000 $0.97015
    • 10000 $0.94932
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    Avnet Americas 2MM-HSP-D03-VT-02-H-TB Tube 5,984 68
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    • 1000 $0.91104
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    Newark 2MM-HSP-D03-VT-02-H-TB Bulk 5,727 1
    • 1 $1.92
    • 10 $1.82
    • 100 $1.52
    • 1000 $1.36
    • 10000 $1.34
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    TE Connectivity 2MM-HSP-D03-VT-02-H-TB 2,826 1
    • 1 $1.91
    • 10 $1.87
    • 100 $1.76
    • 1000 $1.64
    • 10000 $1.56
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    TE Connectivity 2MM-HSP-D07-HT-02-H-TB

    14P, AMPMODU 2 MM, SHROUDED HEAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 2MM-HSP-D07-HT-02-H-TB Tube 1,556 1
    • 1 $2.83
    • 10 $2.83
    • 100 $2.20471
    • 1000 $1.88104
    • 10000 $1.88104
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    Newark 2MM-HSP-D07-HT-02-H-TB Bulk 1,632 1
    • 1 $4.64
    • 10 $4.28
    • 100 $3.66
    • 1000 $3.38
    • 10000 $2.98
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    TE Connectivity 2MM-HSP-D07-HT-02-H-TB 1,556 1
    • 1 $3.76
    • 10 $3.67
    • 100 $3.39
    • 1000 $3.1
    • 10000 $3.1
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    Find more SPD0 price and stock on Findchips.com

    SPD0 Datasheets (192)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPD005G Smartec Smartec Pressure Sensor Original PDF
    SPD014A SIPAT SAW Duplexer 836.5/881.5MHz Original PDF
    SPD015A Smartec Smartec Pressure Sensor Original PDF
    SPD015A Smartec Smartec Pressure Sensor Original PDF
    SPD015G Smartec Smartec Pressure Sensor Original PDF
    SPD01A Sunplus Technology DUAL-TONE MELODY GENERATOR Original PDF
    SPD01N50M2 Infineon Technologies Transistor Mosfet N-CH 550V 0.8A 3P-TO252 Original PDF
    SPD01N50M2 Infineon Technologies Cool MOS Power-Transistor Original PDF
    SPD01N50M2 Infineon Technologies CoolMOS Power-Transistor Scan PDF
    SPD01N60C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; VDS (max): 600.0 V; Package: DPAK (TO-252); RDS(ON) @ TJ=25°C VGS=10: 6,000.0 mOhm; ID(max) @ TC=25°C: 0.8 A; IDpuls (max): 1.6 A; Original PDF
    SPD01N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD01N60C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD01N60C3BTMA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 0.8A TO-252 Original PDF
    SPD01N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPD01N60S5 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SPD025980 Luxo Optical Inspection Equipment - Accessories - SP SUCTION LENS 4D Original PDF
    SPD026586 Luxo Optical Inspection Equipment - Accessories - HANDLE WHITE Original PDF
    SPD026587 Luxo Optical Inspection Equipment - Accessories - HANDLE LT GRAY Original PDF
    SPD026588 Luxo Optical Inspection Equipment - Accessories - HANDLE BLACK Original PDF
    SPD02N50C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    ...

    SPD0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    EN60947-5-1

    Abstract: SPD03505
    Text: S/MOD/SPD03505/E/13/01/2011 page 1 / 2 F/GB Relais Statique DC DC Solid State Relay SPD03505 24VDC input 5A/24VDC output • Compatibilité du brochage avec les Relais Electro-mécaniques . • Commande DC Non polarisée. • Sortie DC. • Importantes surcharges en courants admissibles.


    Original     		S/MOD/SPD03505/E/13/01/2011 SPD03505 24VDC A/24VDC EN60947-5-1 SPD03505 PDF

    VPT09050

    Abstract: *08P06P transistor SMD 352
    Text: SIEM EN S SPD08P06P SPU08P06P Preliminary data SIPMOS Power Transistor • P-Channel • Enhancement mode • Avalanche rated VPT09050 VPT09051 • dvldt rated • 175°C operating temperature Type SPD08P06P VDS -60 V b -8.8 A ^DSion 0.3 Q Pin 1 Pin 2 Pin 3


    OCR Scan     		SPD08P06P SPU08P06P VPT09050 VPT09051 P-T0252 Q67040-S4153-A2 P-T0251-3-1 Q67040-S4154-A2 VPT09050 *08P06P transistor SMD 352 PDF

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: SPU01N60S5 SPD01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 PDF

    04N80C3

    Abstract: PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking
    Text: SPD04N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPD04N80C3 PG-TO252 Q47040-S4563 04N80C3 04N80C3 PG-TO252-3-11 Q47040-S4563 SPD04N80C3 INFINEON marking PDF

    78510

    Abstract: No abstract text available
    Text: 3M High-Speed Card-Edge Connector, SPD08 The High-Speed Card-Edge Connector SPD08 is the latest board-to-board offering from 3M. It is suitable for a wide variety of applications in these markets: datacom systems, enterprise servers, telecommunications equipment, defense and


    Original     		SPD08 SPD08 78510 PDF

    SP*02N60

    Abstract: P-TO252 SPD02N60 SPU02N60
    Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified


    Original     		SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60 PDF

    03N60C3

    Abstract: SPD03N60C3
    Text: SPD03N60C3 SPU03N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 1.4 Ω • Extreme dv/dt rated ID 3.2


    Original     		SPD03N60C3 SPU03N60C3 P-TO251 P-TO252 Q67040-S4421 03N60C3 03N60C3 SPD03N60C3 PDF

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Text: SPD04N60C3 SPU04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3 PDF

    02N60C3

    Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
    Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 PDF

    07N60S5

    Abstract: P-TO251-3-1 P-TO252 SPD07N60S5 SPU07N60S5
    Text: SPU07N60S5 SPD07N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity


    Original     		SPU07N60S5 SPD07N60S5 O-251 O-252 SPUx3N60S5/SPDx3N60S5 SPU07N60S5 P-TO251-3-1 07N60S5 Q67040-S4196 07N60S5 P-TO251-3-1 P-TO252 SPD07N60S5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPD0801 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.0 @Temp (øC) (Test Condition)55# V(RRM)(V) Rep.Pk.Rev. Voltage80 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.100 V(FM) Max.(V) Forward Voltage950m @I(FM) (A) (Test Condition)1.0


    Original     		SPD0801 Voltage80 Voltage950m Current200u Current10m PDF

    04N60S5

    Abstract: SPD04N60S5 P-TO251-3-1 P-TO252 SPU04N60S5 04N60
    Text: SPU04N60S5 SPD04N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated S,3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPU04N60S5 SPD04N60S5 SPUx6N60S5/SPDx6N60S5 SPU04N60S5 P-TO251-3-1 P-TO252 04N60S5 Q67040-S4228 04N60S5 SPD04N60S5 P-TO251-3-1 P-TO252 04N60 PDF

    SPD015A

    Abstract: No abstract text available
    Text: last update februari 28, 2011 DATASHEET SPD015AATO05 reference spd015aato05n.doc page 1/1 A 15 PSI ABSOLUTE PRESSURE SENSOR FOR ATMOSPHERIC PRESSURE MEASUREMENT This 1 bar absolute pressure sensor is specially designed for measuring the pressure of the atmosphere. By means of an analogue output connection to


    Original     		SPD015AATO05 spd015aato05n SPD015A PDF

    Smartec pressure sensor

    Abstract: SPD015A SPD015AA
    Text: last update februari 28, 2011 DATASHEET SPD015AAsil reference spd015aasiln.doc page 1/1 ABSOLUTE PRESSURE SENSOR WITH COMPENSATED ANALOGUE OUTPUT: SPD015AAsil This Smartec pressure sensor has an amplified analogue output. The sensor is compensated for offset, sensitivity, temperature drift and nonlinearity.


    Original     		SPD015AAsil spd015aasiln Smartec pressure sensor SPD015A SPD015AA PDF

    02N80C3

    Abstract: JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c
    Text: SPD02N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 2.7 Ω Q g,typ 12 nC • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		SPD02N80C3 PG-TO252-3 02N80C3 02N80C3 JESD22 SPD02N80C3 Transistor d12 t smd G47 02n80c PDF

    07n60c2

    Abstract: TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2
    Text: SPD07N60C2 SPU07N60C2 Preliminary data Cool MOS Power Transistor COOLMOS Power Semiconductors Feature • New revolutionary high voltage technology · Worldwide best RDS on in TO-251 and TO-252 · Product Summary VDS 600 V Ultra low gate charge R DS(on)


    Original     		SPD07N60C2 SPU07N60C2 O-251 O-252 P-TO251 P-TO252 Q67040-S4312 07N60C2 07n60c2 TRANSISTOR SMD MARKING CODE 12w smd transistor marking 12W transistor SMD 12W smd transistor 12W 98 smd transistor code 12w 07N60C2 equivalent P-TO252 SDP06S60 SPD07N60C2 PDF

    SPD09N05

    Abstract: P-TO252 SPU09N05 spd09n
    Text: SPD09N05 SPU09N05 Preliminary data SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/dt rated • 175°C operating temperature Type VDS ID RDS on Package Ordering Code SPD09N05 55 V 9.2 A 0.15 Ω P-TO252 Q67000-. . . . - . .


    Original     		SPD09N05 SPU09N05 P-TO252 Q67000-. P-TO251 16/Oct/1997 SPD09N05 P-TO252 SPU09N05 spd09n PDF

    1N5817-1N5819

    Abstract: SPD0801SM SPD0801SMS SPD0901SM SPD1001SM SPD1001SMS
    Text: PRELIMINARY SPD0801SMST thru SPD1001SMS SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 Designer’s Data Sheet FEATURES: PIV to 100 Volts Extremely Low Forward Voltage Drop Low Reverse Leakage Current


    OCR Scan     		670-SSDI SPD0801SMST SPD1001SMS 1N5817-1N5819 SPD0801SM SPD0901SM SPD1001SM 300ps SPD0801SMS SPD1001SMS PDF

    02N50C3

    Abstract: 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490
    Text: SPD02N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPD02N50C3 P-TO252-3-1 Q67040-S4570 02N50C3 02N50C3 02N5 Q67040-S4570 SPD02N50C3 TRANSISTOR SMD MARKING CODE 490 PDF

    03n60s5

    Abstract: 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5
    Text: SPU03N60S5 SPD03N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 1.4 Ω ID 3.2 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU03N60S5 SPD03N60S5 P-TO252 P-TO251-3-1 Q67040-S4227 03N60S5 03n60s5 03n60 P-TO251-3-1 P-TO252 SPD03N60S5 SPU03N60S5 PDF

    04N80C3

    Abstract: 04N80 Q47040-S4563 SPD04N80C3 04n80c
    Text: SPD04N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 800 V RDS on 1.3 Ω ID 4 A • Periodic avalanche rated P-TO252-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPD04N80C3 P-TO252-3-1 Q47040-S4563 04N80C3 04N80C3 04N80 Q47040-S4563 SPD04N80C3 04n80c PDF

    SPU08P06P

    Abstract: P-TO251-3-1 P-TO252 SPD08P06P Q67040-S4153
    Text: SPD08P06P SPU08P06P Preliminary data SIPMOS  Power-Transistor Features Product Summary • P-Channel Drain source voltage VDS -60 V · Enhancement mode Drain-source on-state resistance RDS on 0.3 W · Avalanche rated Continuous drain current ID -8.8 A ·


    Original     		SPD08P06P SPU08P06P P-TO252 Q67040-S4153 P-TO251-3-1 Q67040-S4154 SPU08P06P P-TO252 SPD08P06P Q67040-S4153 PDF

    04n50c3

    Abstract: SPD04N50C3 Q67040-S4574 04N50
    Text: SPD04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252-3-1 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPD04N50C3 P-TO252-3-1 Q67040-S4574 04N50C3 04n50c3 SPD04N50C3 Q67040-S4574 04N50 PDF

    02N60S5

    Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
    Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 PDF