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Infineon Technologies AG SPD02N60S5BTMA1 MOSFET N-CH 600V 1.8A TO252-3
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DigiKey	SPD02N60S5BTMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD02N60S5BTMA1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD02N60S5BTMA1	Digi-Reel			1	1 $1.14 10 $1.14 100 $1.14 1000 $1.14 10000 $1.14	Buy Now
Verical	SPD02N60S5BTMA1		12,500		800	1 - 10 - 100 - 1000 $0.4428 10000 $0.4428	Buy Now
	SPD02N60S5BTMA1		870		800	1 - 10 - 100 - 1000 $0.4428 10000 $0.4428	Buy Now
Rochester Electronics	SPD02N60S5BTMA1		13,370		1	1 $0.4167 10 $0.4167 100 $0.3917 1000 $0.3542 10000 $0.3542	Buy Now
Rochester Electronics LLC SPD02N60S5BTMA1 MOSFET N-CH 600V 1.8A TO252-3
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DigiKey	SPD02N60S5BTMA1	Bulk			693	1 - 10 - 100 - 1000 $0.43 10000 $0.43	Buy Now
Infineon Technologies AG SPD02N60C3BTMA1 MOSFET N-CH 650V 1.8A TO252-3
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DigiKey	SPD02N60C3BTMA1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SPD02N60C3BTMA1	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics	SPD02N60C3BTMA1		6		1	1 $0.4167 10 $0.4167 100 $0.3917 1000 $0.3542 10000 $0.3542	Buy Now
Win Source Electronics	SPD02N60C3BTMA1		47,318			1 - 10 - 100 - 1000 $0.316 10000 $0.283	Buy Now
Infineon Technologies AG SPD02N60S5
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SPD02N60S5		292			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SPD02N60S5		1,340			1 $1.74 10 $1.74 100 $1.74 1000 $0.696 10000 $0.609	Buy Now
Infineon Technologies AG SPD02N60C3 POWER FIELD-EFFECT TRANSISTOR, 1.8A I(D), 600V, 3OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SPD02N60C3		1,190			1 $2.792 10 $2.792 100 $2.792 1000 $1.047 10000 $1.047	Buy Now
ComSIT USA	SPD02N60C3		1,354			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	SPD02N60C3		47,320			1 - 10 - 100 - 1000 $0.316 10000 $0.283	Buy Now

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SPD02N60 Datasheets (12)

Part	Manufacturer	Description	Datasheet Type	PDF
SPD02N60	Siemens		Original	PDF
SPD02N60	Siemens	SIPMO Power Transistor	Original	PDF
SPD02N60	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SPD02N60C3	Infineon Technologies	CoolMOS Power MOSFET, 600V, DPAK, RDSon=3.00 ?, 1.8A	Original	PDF
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60C3BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 1.8A DPAK	Original	PDF
SPD02N60S5	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO252-3; V_DS (max): 600.0 V; Package: DPAK (TO-252); R_DS(ON) @ T_J=25°C V_GS=10: 3,000.0 mOhm; I_D(max) @ T_C=25°C: 1.8 A; I_Dpuls (max): 3.2 A;	Original	PDF
SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60S5	Infineon Technologies	Cool MOS Power Transistor	Original	PDF
SPD02N60S5	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF
SPD02N60S5BTMA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 1.8A TO-252	Original	PDF

SPD02N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
SP*02N60 Abstract: P-TO252 SPD02N60 SPU02N60 Text: SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Type VDS ID SPD02N60 600 V 2 A SPU02N60 Pin 1 Pin 2 Pin 3 G D S RDS on @ VGS Package VGS = 10 V P-TO252 5.5 Ω P-TO251 Maximum Ratings, at T j = 25 °C, unless otherwise specified	Original	PDF	SPD02N60 SPU02N60 P-TO252 P-TO251 Q67040-S4133 Q67040-S4127-A2 SP*02N60 P-TO252 SPD02N60 SPU02N60
02N60C3 Abstract: 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6 Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 02N60 Q67040-S4420 GPT09051 P-TO252 SPD02N60C3 SPU02N60C3 02N6
02N60S5 Abstract: 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 Q67040-S4226 02N60S5 02N60S5 02n60 P-TO251-3-1 SPD02N60S5 SPU02N60S5 P-TO252
SPD02N60S5 Abstract: 02N60S5 P-TO252 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252. • Periodic avalanche rated • Extreme dv/dt rated P-TO251. 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252. P-TO251. Q67040-S4226 02N60S5 SPD02N60S5 02N60S5 P-TO252 SPU02N60S5
02N60S5 Abstract: SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO251-3-1 Q67040-S4226 P-TO252 Q67040-S4213 02N60S5 02N60S5 SPD02N60S5 SPU02N60S5 GPT09051 P-TO251-3-1 P-TO252 Transistor 02N60S5
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated ID •=Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3
DD35 Abstract: 02N60C3 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated RDS on • Extreme dv/dt rated	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 DD35
02N60 Abstract: SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPU02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5
02N60S5 Abstract: 02N60 SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 P-TO251-3-1 P-TO252 02N60S5 02N60S5 Q67040-S4226 Q67040-S4213 02N60 SPD02N60S5
02N60S5 Abstract: smd 0306 package SPD02N60S5 SPU02N60S5 02N60 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252. • Periodic avalanche rated • Extreme dv/dt rated PG-TO251. 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252. PG-TO251. SPD02N60S5 Q67040-S4226 Q67040-S4213 02N60S5 smd 0306 package 02N60
Untitled Abstract: No abstract text available Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 3 Ω ID 1.8 A • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5
02N60c3 Abstract: 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623 Text: SPD02N60C3 SPU02N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax •=Periodic avalanche rated	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60c3 02n60 SPD02N60C3 EAS50 P-TO252 SPU02N60C3 DIODE MARKING CODE 623
02n60s5 Abstract: Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 PG-TO252-3-11 SPD02N60S5 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 1a SPU02N60S5 TRANSISTOR SMD MARKING CODE 42
02n60 Abstract: SPD02N60S5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 3 Ω ID 1.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4226 Q67040-S4213 02n60 SPD02N60S5

02N60 Abstract: No abstract text available Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax • Periodic avalanche rated RDS on • Extreme dv/dt rated ID • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02N60
02N6 Abstract: 02N60S5 SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
02N60C3 Abstract: P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 Q67040-S4420 02N60C3 02N60C3 P-TO252 SPD02N60C3 SPU02N60C3 marking code V6 73 DIODE
02N60S5 Abstract: 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 Text: SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on	Original	PDF	SPU02N60S5 SPD02N60S5 P-TO252 P-TO251-3-1 SPUx5N60S5/SPDx5N60S5 Q67040-S4226 02N60S5 02N60S5 02N60 DIODE MARKING CODE 623 smd diode 44a SPU02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5
02N6 Abstract: SPU02N60S5 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623 Text: SPU02N60S5 SPD02N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:	Original	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-TO251-3-1 02N60S5 Q67040-S4226 P-TO252 02N6 02N60S5 P-TO251-3-1 P-TO252 SPD02N60S5 DIODE MARKING CODE 623
02n60s5 Abstract: Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5 Text: SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A PG-TO252 • Periodic avalanche rated • Extreme dv/dt rated PG-TO251 2 • Ultra low effective capacitances	Original	PDF	SPU02N60S5 SPD02N60S5 PG-TO252 PG-TO251 Q67040-S4226 02N60S5 02n60s5 Transistor 02N60S5 02N60 02n60s spd02n60s5 SPU02N60S5
02N60C3 Abstract: 02n60 Text: SPD02N60C3 SPU02N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • Ultra low effective capacitances	Original	PDF	SPD02N60C3 SPU02N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4420 02N60C3 02n60
SP*02N60 Abstract: transistor smd hq Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated V P T 0905 1 Type SPD02N60 ^DS h 600 V 2 A Pin 1 Pin 2 Pin 3 G D S f î DS on (a) VGS Package Ordering Code 5.5 Q, Vgs = 10 V P-T0252	OCR Scan	PDF	SPD02N60 SPU02N60 P-T0251 Q67040-S4133 Q67040-S4127-A2 P-T0252 135ical SP*02N60 transistor smd hq
Untitled Abstract: No abstract text available Text: SIEMENS SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel / n, /S. / • Enhancement mode • Avalanche rated kX VPT09050 VP T0 90 5 1 Pin 1 Pin 2 Pin 3 G D S Type Vds b f î DS on (5) VGS Package Ordering Code SPD02N60 600 V 2A	OCR Scan	PDF	SPD02N60 SPU02N60 VPT09050 P-T0252 Q67040-S4133 P-T0251 Q67040-S4127-A2
02N60S5 Abstract: SMD TRANSISTOR MARKING 02N SPD02N60S5 Text: SIEMENS SPU02N60S5 SPD02N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity	OCR Scan	PDF	SPU02N60S5 SPD02N60S5 SPUx5N60S5/SPDx5N60S5 SPU02N60S5 P-T0251 02N60S5 Q67040-S4226 P-T0252 02N60S5 SMD TRANSISTOR MARKING 02N SPD02N60S5

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SPD02N60 Search Results

SPD02N60 Price and Stock

Infineon Technologies AG SPD02N60S5BTMA1

Rochester Electronics LLC SPD02N60S5BTMA1

Infineon Technologies AG SPD02N60C3BTMA1

Infineon Technologies AG SPD02N60S5

Infineon Technologies AG SPD02N60C3

SPD02N60 Datasheets (12)

SPD02N60 Datasheets Context Search

SP*02N60

02N60C3

02N60S5

SPD02N60S5

02N60S5

02N60C3

DD35

02N60

02N60S5

02N60S5

Untitled

02N60c3

02n60s5

02n60

02N60

02N6

02N60C3

02N60S5

02N6

02n60s5

02N60C3

SP*02N60

Untitled

02N60S5