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    04N60C Search Results

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    04N60C Price and Stock

    Rochester Electronics LLC SPS04N60C3AKMA1

    N-CHANNEL POWER MOSFET
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    DigiKey SPS04N60C3AKMA1 Bulk 101,415 594
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    Rochester Electronics LLC SPD04N60C2

    N-CHANNEL POWER MOSFET
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    DigiKey SPD04N60C2 Bulk 45,850 831
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    Rochester Electronics LLC SPP04N60C2

    N-CHANNEL POWER MOSFET
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    DigiKey SPP04N60C2 Bulk 19,000 799
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    Rochester Electronics LLC SPS04N60C3BKMA1

    MOSFET N-CH 650V 4.5A TO251-3
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    DigiKey SPS04N60C3BKMA1 Tube 15,000 462
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    Rochester Electronics LLC SPP04N60C3XKSA1

    LOW POWER_LEGACY
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    DigiKey SPP04N60C3XKSA1 Bulk 4,500 302
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    04N60C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    04N60C3

    Abstract: 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3
    Text: 04N60C3 04N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO251 P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 04N60C 04N60 SPU04N60C3 P-TO252 SDP06S60 SPD04N60C3 PDF

    TEA1713

    Abstract: 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934
    Text: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 01 — 22 March 2010 Application note Document information Info Content Keywords TEA1713, PFC, burst mode, adapter, LCD TV, Plasma TV, resonant, converter. Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


    Original     		AN10881 TEA1713 TEA1713, AN10881 6NK60 04N60C3 equivalent bs170 replacement 04n60c3 04n60c3 replacement TEA1523 diode zd201 KD366 k3934 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01
    Text: 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.95 Ω


    Original     		SPA04N60C3 P-TO220-3-31 P-TO220-3-31 Q67040-S4413 04N60C3 04n60c3 04N60C3 equivalent SPA04N60C3 04N60C GPT09301 SDP06S60 AN-TO220-3-31-01 PDF

    04n60c3

    Abstract: 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 Q67040-S4366 04N60C3 04n60c3 04N60C3 equivalent SPP04N60C3 04N60C SDP06S60 SPB04N60C3 PDF

    04N60C3 equivalent

    Abstract: 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on)


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04N60C3 equivalent 04n60c3 04N60C 04n60 IT 239 P-TO252 SDP06S60 SPD04N60C3 SPU04N60C3 PDF

    04n60c2

    Abstract: 04N60C SPU04N60C2 Q67040-S4307 SPD04N60C2
    Text: 04N60C2 04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5 A • Ultra low effective capacitances


    Original     		SPD04N60C2 SPU04N60C2 P-TO251 P-TO252 P-TO252 Q67040-S4307 Q67040-S4306 04n60c2 04N60C SPU04N60C2 PDF

    Untitled

    Abstract: No abstract text available
    Text: 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated


    Original     		SPA04N60C3 P-TO220-3-31 04N60C3 P-TO220-3-31 Q67040-S4413 PDF

    04n60c2

    Abstract: spp04n60c2 04N60C
    Text: Final data 04N60C2, 04N60C2 04N60C2 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP04N60C2, SPB04N60C2 SPA04N60C2 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C2 04n60c2 04N60C PDF

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Text: Final data 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD PDF

    04N60C3

    Abstract: smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C
    Text: 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04N60C3 smd transistor G18 04N60C3 equivalent 4V-20V 5304 marking code SPA04N60C3 SPB04N60C3 SPP04N60C3 04N60C PDF

    Untitled

    Abstract: No abstract text available
    Text: AN10881 TEA1713 resonant power supply control IC with PFC Rev. 2 — 26 September 2011 Application note Document information Info Content Keywords TEA1713, adapter, LCD TV, Plasma TV, resonant, converter, PFC, Burst mode Abstract The TEA1713 integrates a controller for Power Factor Correction PFC


    Original     		AN10881 TEA1713 TEA1713, PDF

    TEA1613

    Abstract: TEA1713 04n60c3 LTV817B-S AN10907 TEA1623P ICE1PCS02 TEA1613T 04N60C3 equivalent mv silicon c320
    Text: AN10907 TEA1613T resonant power supply control IC Rev. 1 — 28 December 2010 Application note Document information Info Content Keywords TEA1613T, burst mode, adapter, LCD TV, plasma TV, resonant, converter. Abstract This application note discusses the TEA1613T application functions.


    Original     		AN10907 TEA1613T TEA1613T, TEA1613 TEA1713 04n60c3 LTV817B-S AN10907 TEA1623P ICE1PCS02 04N60C3 equivalent mv silicon c320 PDF

    04n60c3

    Abstract: No abstract text available
    Text: Preliminary data 04N60C3, 04N60C3 04N60C3 Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary VDS @ Tjmax - V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A •=Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3 PDF

    04n60c2

    Abstract: Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60
    Text: 04N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in SOT 223 VDS 600 V • Ultra low gate charge RDS(on) 0.95 Ω • Extreme dv/dt rated ID 0.8 A • Ultra low effective capacitances


    Original     		SPN04N60C2 OT-223 Q67040-S4308 VPS05163 04N60C2 04n60c2 Q67040-S4308 SPN04N60C2 VPS05163 720 TRANSISTOR smd sot-223 s4308 UA716 04n60 PDF

    04n60c3

    Abstract: 04N60C DSA0031699
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original     		SPP04N60C3 SPB04N60C3 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4366 Q67040-S4407 04n60c3 04N60C DSA0031699 PDF

    04n60c3

    Abstract: 04N60C3 equivalent Q67040-S4412 SPU04N60C3 FS - K - 1 - 0.95 - A - 40 04N60 P-TO252 SDP06S60 SPD04N60C3
    Text: 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge P-TO251 • Periodic avalanche rated P-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 Q67040-S4412 04N60C3 04n60c3 04N60C3 equivalent Q67040-S4412 SPU04N60C3 FS - K - 1 - 0.95 - A - 40 04N60 P-TO252 SDP06S60 SPD04N60C3 PDF

    04n60c2

    Abstract: UA716 SPA04N60C2 04N60C 04n60 AN-TO220-3-31-01 GPT09301 SDP06S60
    Text: Preliminary data 04N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated


    Original     		SPA04N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4330 04N60C2 04n60c2 UA716 SPA04N60C2 04N60C 04n60 AN-TO220-3-31-01 GPT09301 SDP06S60 PDF

    04N60C

    Abstract: No abstract text available
    Text: 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.95 Ω • Extreme dv/dt rated ID 4.5 A • High peak current capability


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4412 04N60C3 04N60C PDF

    SPD04N60C3

    Abstract: 04n60c3
    Text: 04N60C3 04N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.95 Ω


    Original     		SPD04N60C3 SPU04N60C3 P-TO251 P-TO252 P-TO252 Q67040-S4412 04N60C3 PDF

    04n60c3

    Abstract: No abstract text available
    Text: 04N60C3 04N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251 • Periodic avalanche rated PG-TO252 • Extreme dv/dt rated • High peak current capability


    Original     		SPD04N60C3 SPU04N60C3 PG-TO251 PG-TO252 SPU04N60C3 PG-TO252 Q67040-S4412 04N60C3 PDF

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: 04N60C3, 04N60C3 04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331 PDF

    tea1716t

    Abstract: No abstract text available
    Text: AN11179 TEA1716 resonant power supply control IC with PFC Rev. 1 — 9 January 2013 Application note Document information Info Content Keywords TEA1716, Power Factor Corrector PFC , LLC, burst mode operation, resonant, power converter Abstract The TEA1716 integrates a power factor corrector controller and a


    Original     		AN11179 TEA1716 TEA1716, tea1716t PDF

    LP2920

    Abstract: No abstract text available
    Text: AN11227 SSL4120 resonant power supply control IC with PFC Rev. 1 — 27 November 2012 Application note Document information Info Content Keywords SSL4120, converter, LED driver, lighting, resonant, converter, PFC, burst mode Abstract The SSL4120 integrates a controller for Power Factor Correction PFC


    Original     		AN11227 SSL4120 SSL4120, LP2920 PDF

    04n60c3

    Abstract: 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3
    Text: Preliminary data 04N60C3, 04N60C3 04N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.95 Ω ID 4.5 A • Periodic avalanche rated • Extreme dv/dt rated


    Original     		SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP04N60C3 Q67040-S4366 04n60c3 04N60C 04N60 04N60C3 equivalent SPB04N60C3 SPA04N60C3 SPP04N60C3 PDF