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    SOT-23 JB Search Results

    SOT-23 JB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    SOT-23 JB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOT-23-6 marking CQ

    Abstract: EB-32 DIODE Eb32 EB-27 Diode EB29 AIC1730 AIC1730-18CV AIC1730-19CV AIC1730-20CV AIC1730-22CV
    Text: AIC1730 150mA, Low Noise, Low Dropout Linear Regulator n FEATURES n DESCRIPTION l Available in ±2% Output Tolerance. The AIC1730 is a low noise, low dropout linear l 1.8V to 3.3V Output Voltage with 0.1V Increment. regulator, housed in a small SOT-23-5 & SOT-23-


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    PDF AIC1730 150mA, AIC1730 OT-23-5 OT-23- OT-23-6W) OT-23-6W OT-23-6W SOT-23-6 marking CQ EB-32 DIODE Eb32 EB-27 Diode EB29 AIC1730-18CV AIC1730-19CV AIC1730-20CV AIC1730-22CV

    MMBTH10

    Abstract: No abstract text available
    Text: MMBTH10 VHF/UHF NPN SILICON TRANSISTOR 25 Volts VOLTAGE POWER SOT- 23 225 mW Unit: inch mm .119(3.00) .110(2.80) .103(2.60) .047(1.20) .056(1.40) • In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA .083(2.10) .066(1.70) Case : SOT-23, Plastic


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    PDF MMBTH10 2002/95/EC OT-23, MIL-STD-750, MMBTH10

    MARKING SOT23 jbs

    Abstract: BAR74 diode marking 74 Q62702-F704
    Text: Silicon Switching Diode ● BAR 74 For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Peak reverse voltage VRM 50


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    PDF Q62702-F704 OT-23 MARKING SOT23 jbs BAR74 diode marking 74 Q62702-F704

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    Abstract: No abstract text available
    Text: Silicon Switching Diode ● BAR 74 For high-speed switching Type Marking Ordering Code tape and reel BAR 74 JBs Q62702-F704 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Symbol Values Unit Reverse voltage VR 50 V Peak reverse voltage VRM 50


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    PDF Q62702-F704 OT-23

    MAX6502UKP095-T

    Abstract: HE MARKING 5PIN MAX6501 MAX6501UKP045-T MAX6501UKP055-T MAX6501UKP115-T MAX6502 MAX6502UKP055-T
    Text: MAX6501, MAX6502 Ultra Small Temperature Switch with Pin−Selectable Hysteresis The MAX6501 and MAX6502 are SOT-23 temperature switches that require no external components and the design is facilitated with factory- programmed temperature thresholds. A choice of


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    PDF MAX6501, MAX6502 MAX6501 MAX6502 OT-23 MAX6501/D MAX6502UKP095-T HE MARKING 5PIN MAX6501UKP045-T MAX6501UKP055-T MAX6501UKP115-T MAX6502UKP055-T

    tr bar

    Abstract: BAR74
    Text: BAR 74 Silicon Switching Diode 3 • For high-speed switching applications 2 1 VPS05161 1 3 EHA07002 Type Marking BAR 74 JBs Pin Configuration 1=A 2 = n.c. Package 3=C SOT-23 Maximum Ratings Parameter Symbol Diode reverse voltage VR 50 Peak reverse voltage


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    PDF VPS05161 EHA07002 OT-23 EHB00013 EHB00014 Oct-05-1999 EHB00015 tr bar BAR74

    8c SOT 23

    Abstract: marking 8C MMBZ5228B 8c marking 8c sot23
    Text: SEMICONDUCTOR MMBZ5228B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8C No. 1 Item Marking Device Mark 8C MMBZ5228B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5228B OT-23 8c SOT 23 marking 8C MMBZ5228B 8c marking 8c sot23

    MMBZ5244B

    Abstract: marking 8U
    Text: SEMICONDUCTOR MMBZ5244B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8U No. 1 Item Marking Device Mark 8U MMBZ5244B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5244B OT-23 MMBZ5244B marking 8U

    MMBZ5239B

    Abstract: 8p sot-23
    Text: SEMICONDUCTOR MMBZ5239B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8P No. 1 Item Marking Device Mark 8P MMBZ5239B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5239B OT-23 MMBZ5239B 8p sot-23

    MMBZ5238B

    Abstract: No abstract text available
    Text: SEMICONDUCTOR MMBZ5238B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8N No. 1 Item Marking Device Mark 8N MMBZ5238B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5238B OT-23 MMBZ5238B

    MMBZ5247B

    Abstract: marking 8X
    Text: SEMICONDUCTOR MMBZ5247B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 8X No. 1 Item Marking Device Mark 8X MMBZ5247B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5247B OT-23 MMBZ5247B marking 8X

    MMBZ5223B

    Abstract: 18C marking
    Text: SEMICONDUCTOR MMBZ5223B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 18C No. 1 Item Marking Device Mark 18C MMBZ5223B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5223B OT-23 MMBZ5223B 18C marking

    18a marking sot23

    Abstract: 18a sot23 marking 18A MMBZ5221B 18a marking marking 18a sot23
    Text: SEMICONDUCTOR MMBZ5221B MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking 18A No. 1 Item Marking Device Mark 18A MMBZ5221B - - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method


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    PDF MMBZ5221B OT-23 18a marking sot23 18a sot23 marking 18A MMBZ5221B 18a marking marking 18a sot23

    BAR74

    Abstract: No abstract text available
    Text: SIEMENS Silicon Switching Diode BAR 74 • For high-speed switching Type Marking Ordering Code tape and reel B A R 74 JB s Q62702-F704 Pin Configuration Package1) SOT-23 °-^ -O 1 EKA07003 Maximum Ratings Parameter Symbol Values Unit Reverse voltage


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    PDF Q62702-F704 OT-23 EHS00011 BAR74

    Untitled

    Abstract: No abstract text available
    Text: VNDN24 N-Channel Enhancement-Mode MOSFETs JBTE55& DEVICE TYPE PACKAGE Single TO-92 TO-226AA VN2406L Single TO-39 (TO-205AD)VN2406M Single TO-220 VN2406D Single SOT-23 TN2460T Single Chip • Available as VNDN1CHP TYPICAL CHARACTERISTICS


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    PDF VNDN24 O-226AA) O-205AD) O-220 OT-23 VN2406L VN2406M VN2406D TN2460T JBTE55&

    PA237

    Abstract: sot-23-5 marking cy B37A PDS-1327B a37a OPA237
    Text: so-« BU RR-BRO W N E OPA237 OPA2237 OPA4237 sin g le /d u a l SSO P-16 quad 1 S O T-23-5 tin g i« SINGLE-SUPPLY OPERATIONAL AMPLIFIERS MicroAmplifier'“ Series FEATURES DESCRIPTION • MICRO-SIZE, MINIATURE PACKAGES Single: SOT-23-5, SO-8 Dual: MSOP-8, SO-8


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    PDF T-23-5 OPA237 OPA2237 OPA4237 OT-23-5, SSOP-16 750nV PA237 sot-23-5 marking cy B37A PDS-1327B a37a

    Q62702-A615

    Abstract: marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING
    Text: Silicon Switching Diode • BAR 74 For high-speed switching Type 0 BAR 74 Marking Ordering code for versions in bulk Ordering code for versions on 8 mm-tape Package JB Q62702-A615 Q62702-A704 SOT 23 Maximum ratings Parameter Symbol Ratings Unit Reverse voltage


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    PDF Q62702-A615 Q62702-A704 Q62702-A615 marking JB Q62702-A704 marking JB diode 74 MARKING CODE 74 MARKING

    Untitled

    Abstract: No abstract text available
    Text: JB’SfSSfe VNDS06 N-Channel Enhancement-Mode MOSFETs TYPE PACKAGE Single TO-92 TO-226AA 2N7000, VN0610LL, VN2222LL Single TO-237 VN2222LM Single SOT-23 VN0605T, 2N7002 Quad 14-Pin Plastic • VQ1000J Quad 14-Pin Dual-ln-Line • VQ1000P Quad


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    PDF VNDS06 2N7000, VN0610LL, VN2222LL VN2222LM VN0605T, 2N7002 VQ1000J VQ1000P O-226AA)

    KJJ 15

    Abstract: BAV70 kjj marking
    Text: BAV70 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI POWER SEMICONDUCTOR y Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23


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    PDF BAV70 OT-23, MIL-STD-202, BAV70 OT-23 DS12006 KJJ 15 kjj marking

    Untitled

    Abstract: No abstract text available
    Text: Silicon Switching Diode 3SE D • BAR 74 053b3E0 OOlbM^G Ü ■ SIP SIEMENS/ SP CLi SEMICONDS For high-speed switching Type B BAR 74 Marking JB Ordering code for versions In bulk Q62702-A615 Ordering code for versions on 8 mm-tape Q62702-A704 Package SOT 23


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    PDF 053b3E0 Q62702-A615 Q62702-A704 175PF 23b32Ã T-03-Q9 023b3SD

    BA831

    Abstract: DS1101 BAS31 sot-23 k21 marking K21
    Text: BAS31 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23


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    PDF OT-23, MIL-STD-202, OT-23 DS11016 BAS31 BAS31 BA831 DS1101 sot-23 k21 marking K21

    1611f

    Abstract: CD43-470 marking LTES LT1611 1N4148 CTX20-1 JMK325BJ226MM LMK212BJ105MG LQH3C220 LT1611CS5
    Text: uim _ LT1611 TECHNOLOGY Inverting 1.4MHz Switching Regulator in SOT-23 FCRTURCS DCSCRIPTIOn • Very Low Noise: 1mVp_p Output Ripple ■ -5V at 150mA from a 5V Input ■ Better Regulation Than a Charge Pump ■ Effective Output Impedance: 0.14 ß


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    PDF LT1611 OT-23 150mA 300mV 300mA OT-23 LT1610 V/30mA LT1613 1611f CD43-470 marking LTES LT1611 1N4148 CTX20-1 JMK325BJ226MM LMK212BJ105MG LQH3C220 LT1611CS5

    Diode SOT-23 marking JE

    Abstract: Diode bav99 kje KJE BAV99 kje vishay bav99 general bav99 vishay BAV99 application Diode bav99 BAV99 KJE SOT-23
    Text: BAV99 V IS H A Y DUAL SURFACE MOUNT SWITCHING DIODE LITEM ZI y POWER SEMICONDUCTOR Features Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance SOT-23 I iI Mechanical Data


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    PDF BAV99 OT-23, MIL-STD-202, OT-23 DS12007 BAV99 Diode SOT-23 marking JE Diode bav99 kje KJE BAV99 kje vishay bav99 general bav99 vishay BAV99 application Diode bav99 KJE SOT-23

    Diode SOT-23 marking 27

    Abstract: TRANSISTOR SMD MARKING CODE w6 Zener diode smd marking code 51 y Zener diode smd marking code 2A 2A transistor smd SOT-23 Zener Diode SOT-23 marking B TRANSISTOR SMD MARKING CODE y12 SMD Transistor Y12 TRANSISTOR SMD MARKING CODE 81c TRANSISTOR SMD MARKING CODE LF
    Text: CENTRAL SEPIICONDUCTOR naoasm 5 DE D 015 • cen T - SMD Zener Diode SOT-23 Case 350mW W - o ° \ U.S. Specification Preferred Series The Central Semiconductor CMPZ5221B Series Silicon Zener Diode is a high quality voltage regulator for use in industrial,


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    PDF OT-23 350mW CMPZ5221B MOT-23 OT-89 OT-143 OT-223 Diode SOT-23 marking 27 TRANSISTOR SMD MARKING CODE w6 Zener diode smd marking code 51 y Zener diode smd marking code 2A 2A transistor smd SOT-23 Zener Diode SOT-23 marking B TRANSISTOR SMD MARKING CODE y12 SMD Transistor Y12 TRANSISTOR SMD MARKING CODE 81c TRANSISTOR SMD MARKING CODE LF