Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SMD TRANSISTOR MARKING CODE 6C Search Results

    SMD TRANSISTOR MARKING CODE 6C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    SMD TRANSISTOR MARKING CODE 6C Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6R190C6

    Abstract: 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPB60R190C6 IPP60R190C6 IPW60R190C6 6r190c6 infineon 6R19
    Contextual Info: MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS C6 600V CoolMOS C6 Power Transistor IPx60R190C6 Data Sheet Rev. 2.1, 2010-02-09 Final In d u s tr ia l & M u l ti m a r k e t 600V CoolMOS™ C6 Power Transistor 1 IPA60R190C6, IPB60R190C6


    Original
    IPx60R190C6 IPA60R190C6, IPB60R190C6 IPI60R190C6, IPP60R190C6 IPW60R190C6 726-IPB60R190C6 IPB60R190C6 6R190C6 6r190 6r190c SMD TRANSISTOR MARKING 9D IPA60R190C6 IPW60R190C6 6r190c6 infineon 6R19 PDF

    6R099

    Abstract: IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE
    Contextual Info: IPB60R099CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Worldwide best R ds,on in TO263 R DS on ,max • Ultra low gate charge 650 V 0.099 Ω 60 nC Q g,typ • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications


    Original
    IPB60R099CP PG-TO263 SP000088490 6R099 6R099 IPB60R099CP smd marking code cp smd code F18 CoolMOS Power Transistor SMD MARKING CODE 102 TRANSISTOR SMD MARKING CODE ag JESD22 SP000088490 MOSFET SMD MARKING CODE PDF

    02n60s5

    Abstract: Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181
    Contextual Info: SPP02N60S5 SPB02N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 3 Ω ID 1.8 A P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated 2 • Ultra low effective capacitances


    Original
    SPP02N60S5 SPB02N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4181 02N60S5 02n60s5 Transistor 02N60S5 02N60 Q67040-S4212 SPB02N60S5 SPP02N60S5 P-TO263-3-2 Q67040-S4181 PDF

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Contextual Info: SPP20N60S5 SPB20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original
    SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5 PDF

    07n60s5

    Abstract: infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5
    Contextual Info: SPP07N60S5, SPB07N60S5 SPI07N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 P-TO262 • Ultra low gate charge VDS 600 V RDS(on) 0.6 Ω ID 7.3 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original
    SPP07N60S5, SPB07N60S5 SPI07N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP07N60S5 Q67040-S4172 07n60s5 infineon 07n60s5 SPB07N60S5 SPI07N60S5 SPP07N60S5 PDF

    04n60c3

    Abstract: 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD
    Contextual Info: Final data SPP04N60C3, SPB04N60C3 SPA04N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original
    SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C 04N60C3 equivalent 04N60 Q67040-S4407 SPA04N60C3 Q67040-S4366 SPB04N60C3 SPP04N60C3 SPB04N60C3 SMD PDF

    20n60c3

    Abstract: 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60
    Contextual Info: Preliminary data SPP20N60C3, SPB20N60C3 SPA20N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Worldwide best RDS on in TO 220 RDS(on) 0.19 Ω ID 20.7 A • Ultra low gate charge


    Original
    SPP20N60C3, SPB20N60C3 SPA20N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 SPP20N60C3 Q67040-S4398 20n60c3 20N60C3 equivalent sp*20n60c3 20n60c Q67040-S4397 diode smd marking code 621 20n60 SPB20N60C3 S4410 spp20n60 PDF

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 PDF

    07N60C3

    Abstract: 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3
    Contextual Info: Preliminary data SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.6 Ω ID 7.3 A • Periodic avalanche rated


    Original
    SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP07N60C3 07N60C3 07N60 07n60c SPA07N60C3 SPB07N60C3 SPI07N60C3 SPP07N60C3 PDF

    11N60C3

    Abstract: 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3
    Contextual Info: Preliminary data SPP11N60C3, SPB11N60C3 SPI11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax


    Original
    SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 Q67040-S4395 11N60C3 11N60C3 11N60C 11N60 SPP11N60C3 Q67042-S4403 TRANSISTOR SMD MARKING CODE 7A Q67040-S4395 Q67040-S4396 SPB11N60C3 SPI11N60C3 PDF

    tlo82

    Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
    Contextual Info: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil


    Original
    I-20089 tlo82 TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842 PDF

    220v AC voltage stabilizer schematic diagram

    Abstract: 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008
    Contextual Info: Prices Guaranteed Until July 31,1998 Catalog 594 Search Products Suppliers New Products CD Only Products How to Order Web Site Help Select an Option Main Menu New Products Help See pages 194 and 196 for new Trimmer Potentiometers. See pages 41 and 42 for new EEPROMS.


    Original
    Batte48 220v AC voltage stabilizer schematic diagram 1000w inverter PURE SINE WAVE schematic diagram philips ecg master replacement guide ecg semiconductors master replacement guide diac 3202 bta16 6008 csr1000 mini Audio transformer 200k to 1k ct input jrc 2904 d BTA12 6008 PDF

    Contextual Info: $ M P IC 1 2 C 5 X X icrochip 8-Pin, 8-Bit CMOS Microcontroller Devices included in this Data Sheet: CMOS Technology: PIC12C508 and PIC12C509 are 8-bit microcontrollers packaged in 8-lead packages. They are based on the Enhanced PIC16C5X family. • Low power, high speed CMOS EPROM


    OCR Scan
    PIC12C508 PIC12C509 PIC16C5X PIC12C508 PIC12C509 DS40139A-page PDF

    power transformer 430-2002

    Abstract: TRANSISTOR SMD MARKING CODE jg SMD TRANSISTOR MARKING 9f infineon marking RFs esm 310 bp bim 433 f PEB 2256 H V1.2 TRANSISTOR SMD MARKING CODE sn rs-12 relay FALC56 application note
    Contextual Info: D at a S hee t, DS 3, A ug . 2 00 2 FALC56 E1/T1/J1 Framer and Line Interface Component for Longand Short-Haul Applications PEB 2256 HT Version 1.2 PEB 2256 E Version 1.2 W i r ed Communications N e v e r s t o p t h i n k i n g . Data Sheet Revision History:


    Original
    FALC56 P-LBGA-81-1 XTS16RA power transformer 430-2002 TRANSISTOR SMD MARKING CODE jg SMD TRANSISTOR MARKING 9f infineon marking RFs esm 310 bp bim 433 f PEB 2256 H V1.2 TRANSISTOR SMD MARKING CODE sn rs-12 relay FALC56 application note PDF

    SERVICE MANUAL OF FLUKE 175

    Abstract: SHARP IC 701 I X11 dot led display large size with circuit diagram IR power mosfet switching power supply The 555 Timer Applications Sourcebook interfacing cpld xc9572 with keyboard distributed control system of power plant 100352 XC3090-100PG175 xc95144 pinout
    Contextual Info: R , XILINX, XACT, XC2064, XC3090, XC4005, XC-DS501, FPGA Architect, FPGA Foundry, NeoCAD, NeoCAD EPIC, NeoCAD PRISM, NeoROUTE, Plus Logic, Plustran, P+, Timing Wizard, and TRACE are registered trademarks of Xilinx, Inc. , all XC-prefix product designations, XACTstep, XACTstep Advanced, XACTstep Foundry, XACT-Floorplanner,


    Original
    XC2064, XC3090, XC4005, XC-DS501, SERVICE MANUAL OF FLUKE 175 SHARP IC 701 I X11 dot led display large size with circuit diagram IR power mosfet switching power supply The 555 Timer Applications Sourcebook interfacing cpld xc9572 with keyboard distributed control system of power plant 100352 XC3090-100PG175 xc95144 pinout PDF

    msi 7267 MOTHERBOARD SERVICE MANUAL

    Abstract: ttl cookbook msi ms 7267 MOTHERBOARD CIRCUIT diagram "0.4mm" bga "ball collapse" height PCF 799 crystal oscillator 8MHz 4 pins smd diode MARKING F5 44C smd TRANSISTOR code marking A7 terminals diagram of smd transistor bo2 cookbook for ic 555
    Contextual Info: GTL/GTLP Logic High-Performance Backplane Drivers Data Book Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information


    Original
    GDFP1-F48 -146AA GDFP1-F56 -146AB msi 7267 MOTHERBOARD SERVICE MANUAL ttl cookbook msi ms 7267 MOTHERBOARD CIRCUIT diagram "0.4mm" bga "ball collapse" height PCF 799 crystal oscillator 8MHz 4 pins smd diode MARKING F5 44C smd TRANSISTOR code marking A7 terminals diagram of smd transistor bo2 cookbook for ic 555 PDF

    erni 41612

    Contextual Info: 074484_Cover_neu_A5_2010 29.04.2010 18:08 Uhr Seite U4U11 Catalog ERNI Electronics The Technology Center ERNI Electronics GmbH Seestrasse 9 73099 Adelberg/Germany Tel +49 71 66 50-0 Fax +49 71 66 50-282 info@erni.de Europe South America ERNI Electronics, Inc.


    Original
    U4U11 23112/USA erni 41612 PDF

    powerpc 405

    Abstract: CHN 628 marking code H5C SMD Transistor mac 7a8 transistor PowerISA 203
    Contextual Info: MPC5744P Reference Manual Document Number: MPC5744PRM Rev. 2, 06/2013 Preliminary MPC5744P Reference Manual, Rev. 2, 06/2013 2 Preliminary Freescale Semiconductor, Inc. Contents Section number Title Page Chapter 1 Preface 1.1


    Original
    MPC5744P MPC5744PRM powerpc 405 CHN 628 marking code H5C SMD Transistor mac 7a8 transistor PowerISA 203 PDF