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    11N60 Search Results

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    11N60 Price and Stock

    Infineon Technologies AG SPB11N60C3ATMA1

    MOSFET N-CH 650V 11A TO263-3
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    DigiKey SPB11N60C3ATMA1 Cut Tape 3,482 1
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    SPB11N60C3ATMA1 Digi-Reel 3,482 1
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    Newark SPB11N60C3ATMA1 Bulk 1,939 1
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    onsemi FCP11N60F

    MOSFET N-CH 600V 11A TO220-3
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    DigiKey FCP11N60F Tube 2,555 1
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    Mouser Electronics FCP11N60F 5,597
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    New Advantage Corporation FCP11N60F 550 1
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    onsemi FCPF11N60

    MOSFET N-CH 600V 11A TO220F
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    DigiKey FCPF11N60 Tube 1,977 1
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    Avnet Americas FCPF11N60 Tube 11 Weeks 1,000
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    Mouser Electronics FCPF11N60 8,759
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    Newark FCPF11N60 Bulk 776 1
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    TME FCPF11N60 139 1
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    Richardson RFPD FCPF11N60 1,000
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    New Advantage Corporation FCPF11N60 7,050 1
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    Win Source Electronics FCPF11N60 3,000
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    onsemi FCP11N60

    MOSFET N-CH 600V 11A TO220-3
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    DigiKey FCP11N60 Tube 1,625 1
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    Avnet Americas FCP11N60 Tube 10 Weeks 1,000
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    Mouser Electronics FCP11N60 895
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    New Advantage Corporation FCP11N60 650 1
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    Vishay Siliconix SIHH11N60EF-T1-GE3

    MOSFET N-CH 600V 11A PPAK 8 X 8
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    DigiKey SIHH11N60EF-T1-GE3 Digi-Reel 1,405 1
    • 1 $4.91
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    SIHH11N60EF-T1-GE3 Cut Tape 1,405 1
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    Find more 11N60 price and stock on Findchips.com

    11N60 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    11N60S5 Infineon Technologies Cool MOS Power Transistor Original PDF

    11N60 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,


    Original     		11N60K-MT 11N60K-MT QW-R502-A99 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary 11N60K-MT Power MOSFET 11A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 11N60K-MT is an N-channel enhancement mode power MOSFET. It uses UTC advanced planar stripe, DMOS technology to provide customers perfect switching performance,


    Original     		11N60K-MT 11N60K-MT O-220F2 QW-R502-A99 PDF

    11N60CFD

    Abstract: SPW11N60CFD 11N60C
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW11N60CFD P-TO247 Q67040-S4619 11N60CFD 11N60CFD SPW11N60CFD 11N60C PDF

    11N60C3

    Abstract: transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3, 11N60C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary VDS @ Tjmax 650 V • Ultra low gate charge RDS on 0.38 Ω 11 A • Periodic avalanche rated


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 11N60C3 transistor 11n60c3 11N60C 11N60 Q67040-S4395 Q67040-S4396 SPA11N60C3 SPB11N60C3 SPI11N60C3 SPP11N60C3 PDF

    3c90 ferrite

    Abstract: 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 AP1661 F1 11N60 1N4148 3C90 MUR460
    Text: BCD Semi Ltd Co. AP1661 Demo Board Manual AP1661 Demo Board Manual Content: 1. Description 2. Specifications 3. Design procedure 4. Schematics of the Demo Board 5. PCB Layout 6. Photo View of the Demo Board 7. BOM 8. Test Result for Typical Performance and Characteristics


    Original     		AP1661 3c90 ferrite 5D-9 ntc 230V AC to 3V DC ic 11N60 RTH 5D-9 F1 11N60 1N4148 3C90 MUR460 PDF

    11N60S5

    Abstract: SPI11N60S5
    Text: 11N60S5 D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation: G,1


    Original     		SPI11N60S5 SPPx2N60S5 P-TO262 11N60S5 Q67040-S4250 11N60S5 SPI11N60S5 PDF

    11N60S5 equivalent

    Abstract: 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760
    Text: 11N60S5, 11N60S5 11N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge P-TO262 • Periodic avalanche rated VDS 600 V RDS on 0.38 Ω ID 11 A P-TO263-3-2 P-TO220-3-1 • Extreme dv/dt rated


    Original     		SPP11N60S5, SPB11N60S5 SPI11N60S5 P-TO262 P-TO263-3-2 P-TO220-3-1 SPP11N60S5 Q67040-S4198 11N60S5 equivalent 11N60S5 TRANSISTOR SMD MARKING CODE 7A SPB11N60S5 SPI11N60S5 SPP11N60S5 P-TO263-3-2 DSA003760 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated ID 11 A •=High peak current capability


    Original     		SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 PDF

    SPW11N60S5

    Abstract: 06161L 11N60S5 equivalent 11N60S5
    Text: 11N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.38


    Original     		SPW11N60S5 P-TO247 SPWx2N60S5 Q67040-S4239 11N60S5 SPW11N60S5 06161L 11N60S5 equivalent 11N60S5 PDF

    11n60c3

    Abstract: 11N60 SDP06S60 SPW11N60C3 06161L 11N60C
    Text: 11N60C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.38 Ω


    Original     		SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 11n60c3 11N60 SDP06S60 SPW11N60C3 06161L 11N60C PDF

    11N60CFD

    Abstract: SPI11N60CFD SPP11N60CFD
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO262 • Extreme dv/dt rated • High peak current capability


    Original     		SPI11N60CFD PG-TO262 11N60CFD PG-TO-262-3-1 11N60CFD SPI11N60CFD SPP11N60CFD PDF

    11n60cfd

    Abstract: SPW11N60CFD 11N6
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW11N60CFD PG-TO247 Q67040-S4619 11N60CFD 11n60cfd SPW11N60CFD 11N6 PDF

    SPA11N60C2

    Abstract: AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60
    Text: Preliminary data 11N60C2 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated R DS on 0.38 Ω • Extreme dv/dt rated


    Original     		SPA11N60C2 P-TO220-3-31 P-TO220-3-31 Q67040-S4332 11N60C2 SPA11N60C2 AN-TO220-3-31-01 11N60C2 11N60C GPT09301 SDP06S60 PDF

    11N60S5

    Abstract: SPW11N60S5
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 11N60S5 SPW11N60S5 PDF

    11n60c3

    Abstract: transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 E8185
    Text: 11N60C3 11N60C3, 11N60C3, 11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220


    Original     		SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 P-TO220-3-31 PG-TO220FP PG-TO262 PG-TO220 PG-TO-220-3-31 11n60c3 transistor 11n60c3 SPA11N60C3E8185 SPI11N60C3 PDF

    11n60cfd

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO247 • Extreme dv/dt rated • High peak current capability


    Original     		SPW11N60CFD PG-TO247 SPW11N60CFD Q67040-S4619 11N60CFD 11n60cfd PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60CFD Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.44 Ω ID 11 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-1 • Extreme dv/dt rated • High peak current capability


    Original     		SPP11N60CFD PG-TO220-3-1 SPP11N60CFD 11N60CFD PG-TO220-3-1 Q67040-S4618 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability


    Original     		SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 PDF

    AR1010

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 AR1010 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary data 11N60C3, 11N60C3 11N60C3 Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature New revolutionary high voltage technology Product Summary  Worldwide best R DS on in TO 220 VDS @ Tjmax 650 V  Ultra low gate charge


    Original     		SPP11N60C3, SPB11N60C3 SPI11N60C3 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 SPP11N60C3 P-TO220-3-1 PDF

    SPD06S60

    Abstract: 11N60C3 transistor 11n60c3
    Text: 11N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated ID 11 A • High peak current capability


    Original     		SPW11N60C3 P-TO247 Q67040-S4418 11N60C3 SPD06S60 11N60C3 transistor 11n60c3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 11N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.38 Ω ID 11 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW11N60S5 P-TO247 Q67040-S4239 11N60S5 PDF

    varistor 10K621

    Abstract: No abstract text available
    Text: Application Note 1096 High Voltage Green Mode PWM Controller AP3105NA/NV/NL/NR Prepared by Wu Qikun System Engineering Dept. 1. Introduction This application note includes detailed explanation of the IC’s major functions, some considerations about the PCB layout, and methods for reducing the


    Original     		AP3105NA/NV/NL/NR AP3105NX AP3103, AP3105NXâ 65kHz AP3103 1N4148, 15V/50Hz 50V/50Hz varistor 10K621 PDF

    11n60c2 equivalent

    Abstract: 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60
    Text: 11N60C2 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V •=Periodic avalanche rated RDS on 0.38 Ω • Extreme dv/dt rated


    Original     		SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 11n60c2 equivalent 11N60C 11N60C2 LMOS SPW11N60C2 SDP06S60 PDF