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    20N60S Search Results

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    20N60S Price and Stock

    Rochester Electronics LLC FGB20N60SF

    IGBT FIELD STOP 600V 40A TO-263
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    DigiKey FGB20N60SF Bulk 726 167
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    Rochester Electronics LLC FGAF20N60SMD

    INSULATED GATE BIPOLAR TRANSISTO
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    DigiKey FGAF20N60SMD Bulk 314 139
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    onsemi FGB20N60SF

    IGBT FIELD STOP 600V 40A TO-263
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    DigiKey FGB20N60SF Reel
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    Rochester Electronics FGB20N60SF 45,199 1
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    Avnet Silica FGB20N60SF 143 Weeks 800
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    EBV Elektronik FGB20N60SF 143 Weeks 800
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    Infineon Technologies AG SPP20N60S5

    MOSFET N-CH 650V 20A TO220-3
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    DigiKey SPP20N60S5 Tube 500
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    Mouser Electronics SPP20N60S5
    • 1 $4.46
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    TME SPP20N60S5 47 1
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    ComSIT USA SPP20N60S5 633
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    Win Source Electronics SPP20N60S5 1,151
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    FLIP ELECTRONICS FCPF20N60ST

    SF1 600V 260MOHM E TO220F
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    DigiKey FCPF20N60ST Tube 143
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    Find more 20N60S price and stock on Findchips.com

    20N60S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    20n60s5

    Abstract: 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5
    Text: 20N60S5 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 20n60s transistor 20N60s5 20n60 20n60s5 datasheet Q67040-S4751 SPP20N60S5 SPB20N60S5 PDF

    20n60s5* values

    Abstract: 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 20n60s5* values 20n60s5 SPW20N60S5 equivalent 20N60S5 TO247 SPW20N60S5 PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5
    Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R 0S 0n in TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances


    OCR Scan     		SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor n60s5 PDF

    transistor 20N60s5

    Abstract: SPW20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 SPW20N60S5 Q67040-S4238 20N60S5 transistor 20N60s5 PDF

    20n60s

    Abstract: 20n60s5 SPW20N60S5
    Text: 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A • Periodic avalanche rated P-TO247 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s 20n60s5 SPW20N60S5 PDF

    SPW20N60S5 equivalent

    Abstract: 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60
    Text: 20N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19


    Original     		SPW20N60S5 P-TO247 SPWx1N60S5 Q67040-S4238 20N60S5 SPW20N60S5 equivalent 20N60S5 TO247 20n60s5 transistor 20N60s5 SPW20N60S5 20n60 PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent
    Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 220 • Ultra low gate charge VDS @ Tjmax 650 V • Improved periodic avalanche rating RDS(on) 0.19


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 transistor 20N60s5 20n60s5 power transistor 20n60s 20n60s5 datasheet S4751 smd diode 444 spp20n60s5 20n60 20n60s5 equivalent PDF

    transistor 20N60s5

    Abstract: 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A P-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 transistor 20N60s5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 20n60s5 power transistor 20N60S5 TO247 20N60S RESISTANCE VALUE 20N60S5 PDF

    20N60S5

    Abstract: No abstract text available
    Text: SIEMENS 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved • Extreme dv/dt rated • Optimized capacitances • Improved noise immunity • Former development designation:


    OCR Scan     		SPW20N60S5 N60S5 SPW20N60S5 P-T0247 20N60S5 Q67040-S4238 20N60S5 PDF

    20n60s5

    Abstract: smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5 20n60s5 smd DIODE code marking 20A SPP20N60S5 20n60s5 power transistor Q67040-S4751 PDF

    20N60S5

    Abstract: SPP20N60S5 Q67040-S4751 SPB20N60S5 20n60s
    Text: 20N60S5 20N60S5 Preliminary data D,2 Cool MOS Power-Transistor • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge G,1 S,3 • Improved periodic avalanche rating • Extreme dv/dt rated COOLMOS


    Original     		SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 SPP20N60S5 P-TO220-3-1 P-TO263-3-2 20N60S5 Q67040-S4751 20N60S5 Q67040-S4751 SPB20N60S5 20n60s PDF

    20n60s5

    Abstract: SPP20N60S5 4252 spp20n60 Q67040-S4751 SPB20N60S5
    Text: 20N60S5 20N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Worldwide best RDS on in TO 220 · Ultra low gate charge · Improved periodic avalanche rating · Extreme dv/dt rated · Optimized capacitances


    Original     		SPP20N60S5 SPB20N60S5 SPPx1N60S5/SPBx1N60S5 P-TO220-3-1 20N60S5 Q67040-S4751 P-TO263-3-2 SPP20N60S5 20n60s5 4252 spp20n60 Q67040-S4751 SPB20N60S5 PDF

    20n60s5

    Abstract: spp20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor
    Text: 20N60S5 20N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best R DS on in TO 220 • Ultra low gate charge VDS 600 V RDS(on) 0.19 Ω ID 20 A P-TO263-3-2 P-TO220-3-1 • Periodic avalanche rated


    Original     		SPP20N60S5 SPB20N60S5 P-TO263-3-2 P-TO220-3-1 P-TO220-3-1 Q67040-S4751 Q67040-S4171 20n60s5 20N60S transistor 20N60s5 20n60s5 power transistor PDF

    75V-8V

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5 75V-8V PDF

    20n60s5

    Abstract: SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s
    Text: 20N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax 650 V • Extreme dv/dt rated RDS on 0.19 Ω • Optimized capacitances ID


    Original     		SPW20N60S5 P-TO247 Q67040-S4238 20N60S5 20n60s5 SPW20N60S5 equivalent SPW20N60S5 transistor 20N60s5 20N60S5 TO247 20n60s PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O SPP20N60S5 smd diode sm i7 siemens 350 98 Q67040-S4751
    Text: SIEMENS SP P 20N 60S 5 SP B 20N 60S 5 Prelim inary data c’ D ,2 Cool MOS Power Transistor I I • New revolutionary high voltage technology / Í • Worldwide best R o s { o n in TO 220 i 0 -G ,1 S /T • Periodic avalanche proved • I ‘


    OCR Scan     		SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 SPP20N60S5 SPB20N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 transistor 20N60s5 20n60s5 power transistor n60s5 20n60s siemens 230 98 O smd diode sm i7 siemens 350 98 Q67040-S4751 PDF

    20N60S1

    Abstract: FMH20N60S1 600V 20A N-Channel MOSFET TO-3P
    Text: / 20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Outline Drawings [mm] φ3.2± 0.1 5±0.1 1.5±0.2 4.5±0.2 Drain D 3 ±0.2 1.5 Applications 15.5max 13 ± 0.2 10 ± 0.2


    Original     		FMH20N60S1 20N60S1 FMH20N60S1 600V 20A N-Channel MOSFET TO-3P PDF

    20N60S5 TO247

    Abstract: 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent SPW20N60S5 siemens 350 98 SPW20 20n60s
    Text: 20N60S5 Preliminary data D,2 Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche proved G,1 • Extreme dv/dt rated 1 S,3 2 3 • Optimized capacitances COOLMOS • Improved noise immunity


    Original     		SPW20N60S5 SPWx1N60S5 SPW20N60S5 P-TO247 20N60S5 Q67040-S4238 20N60S5 TO247 20n60s5 transistor 20N60s5 20n60s5 power transistor SPW20N60S5 equivalent siemens 350 98 SPW20 20n60s PDF

    20N60S5 TO247

    Abstract: 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 0.19 Ω ID 20 A PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance


    Original     		SPW20N60S5 PG-TO247 Q67040-S4238 20N60S5 009-134-A O-247 20N60S5 TO247 20n60s5 20N60S5 to-247 SPW20N60S5 20n60s5* values PDF

    20n60s5

    Abstract: transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 SPP20N60S5
    Text: SIEMENS 20N60S5 20N60S5 Preliminary data Cool MOS Power Transistor • New revolutionary high voltage technology • Worldwide best R q S 0 n ¡n TO 220 • Ultra low gate charge • Periodic avalanche proved • Extreme äv/ät rated • Optimized capacitances


    OCR Scan     		SPP20N60S5 SPB20N60S5 N60S5/SPBx1 N60S5 P-T0220-3-1 P-T0263-3-2 20N60S5 20N60S5 transistor 20N60s5 20n60s5 power transistor 20n60s N60S5 SPP20N60 SPB20N60S5 smd transistor S5 PDF

    SPP20N60S5

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220-3-1 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 P-TO220-3-1 PG-TO220-3-1 SPP20N60S5 PG-TO220-3-1 Q67040-S4751 20N60S5 PDF

    20n60s

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 600 V RDS on 0.19 Ω ID 20 A P-TO263-3-2 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		SPB20N60S5 P-TO263-3-2 20N60S5 SPB20N60S5 Q67040-S4171 20n60s PDF

    Untitled

    Abstract: No abstract text available
    Text: 20N60S5 Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 VDS 600 V RDS(on) 0.19 Ω ID 20 A PG-TO220 • Ultra low gate charge • Periodic avalanche rated 2 • Extreme dv/dt rated


    Original     		SPP20N60S5 PG-TO220 P-TO220-3-1 Q67040-S4751 20N60S5 PDF

    20N60S1

    Abstract: Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S
    Text: / 20N60S1 FUJI POWER MOSFET Super J-MOS series N-Channel enhancement mode power MOSFET Features Low on-state resistance Low switching loss easy to use more controllabe switching dV/dt by Rg Outline Drawings [mm]


    Original     		FMV20N60S1 O-220F 20N60S1 Fmv20n60 FMV20N60S1 fuji electric lot code 20N60S PDF