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Vishay Siliconix SIRA10DP-T1-GE3 MOSFET N-CH 30V 60A PPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIRA10DP-T1-GE3	Cut Tape	7,727		1	1 $1.57 10 $0.992 100 $1.57 1000 $0.474 10000 $0.474	Buy Now
	SIRA10DP-T1-GE3	Digi-Reel	7,727		1	1 $1.57 10 $0.992 100 $1.57 1000 $0.474 10000 $0.474	Buy Now
	SIRA10DP-T1-GE3	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.41606	Buy Now
RS	SIRA10DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.77	Get Quote
Vishay Intertechnologies SIRA10DP-T1-GE3 Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA10DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA10DP-T1-GE3	Reel		21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.369	Buy Now
Mouser Electronics	SIRA10DP-T1-GE3		10,145			1 $0.74 10 $0.735 100 $0.533 1000 $0.429 10000 $0.375	Buy Now
Verical	SIRA10DP-T1-GE3		388		15	1 - 10 - 100 $0.4541 1000 $0.3971 10000 $0.3971	Buy Now
Arrow Electronics	SIRA10DP-T1-GE3	Cut Strips	388	21 Weeks	1	1 $0.5334 10 $0.5291 100 $0.4541 1000 $0.3971 10000 $0.3971	Buy Now
Newark	SIRA10DP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 $0.625 1000 $0.625 10000 $0.625	Buy Now
	SIRA10DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.399	Buy Now

TTI	SIRA10DP-T1-GE3	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.364	Buy Now
TME	SIRA10DP-T1-GE3		3,000		1	1 $0.764 10 $0.687 100 $0.546 1000 $0.509 10000 $0.509	Buy Now
Avnet Asia	SIRA10DP-T1-GE3			22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIRA10DP-T1-GE3			21 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

SIRA10DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA10DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A SO-8		Original	PDF

SIRA10DP Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	PDF	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SPICE Device Model SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	SiRA10DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET	Original	PDF	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	PDF	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
SiRA10DP Abstract: No abstract text available Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	PDF	SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET	Original	PDF	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiRA10DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	SiRA10DP AN609, 2338m 7624u 2250m 2783m 2650m 8961m 8993u 17-Feb-12
Untitled Abstract: No abstract text available Text: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	PDF	SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	PDF	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Text: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	PDF	VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip
v0615a Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7	Original	PDF	J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	PDF	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
POWERPAK SO8 Abstract: SIS32 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	PDF	SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32
SMD resistors codes Abstract: No abstract text available Text: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer デスクトップPC サーバー 4 組み込み型システム 5 SSD（ソリッドステートディスク） 6	Original	PDF	J-STD-020 SC-70 WSL1206 VMN-MS6792-1304-COSC SMD resistors codes