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Vishay Intertechnologies SIRA10DP-T1-GE3 Trans MOSFET N-CH 30V 25A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIRA10DP-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SIRA10DP-T1-GE3	Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.369	Buy Now
Mouser Electronics	SIRA10DP-T1-GE3		8,331			1 $0.77 10 $0.659 100 $0.519 1000 $0.432 10000 $0.389	Buy Now
Verical	SIRA10DP-T1-GE3		383		15	1 - 10 - 100 $0.4038 1000 $0.3971 10000 $0.3971	Buy Now
Arrow Electronics	SIRA10DP-T1-GE3	Cut Strips	383	12 Weeks	1	1 $0.4308 10 $0.4241 100 $0.4038 1000 $0.3971 10000 $0.3971	Buy Now
Newark ()	SIRA10DP-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.399	Buy Now
	SIRA10DP-T1-GE3	Cut Tape			3,000	1 - 10 - 100 $0.633 1000 $0.633 10000 $0.633	Buy Now

TTI	SIRA10DP-T1-GE3	Reel	12,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.375	Buy Now
TME	SIRA10DP-T1-GE3		2,995		1	1 $0.744 10 $0.669 100 $0.531 1000 $0.496 10000 $0.496	Buy Now
Avnet Asia	SIRA10DP-T1-GE3			14 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	SIRA10DP-T1-GE3			13 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	SIRA10DP-T1-GE3				3,000	1 - 10 - 100 - 1000 - 10000 $0.5655	Buy Now
Vishay Siliconix SIRA10DP-T1-GE3 Semiconcuctor, Mosfet;TrenchFET;N-Channel;30V;30A;3.7mohm @ 10V;PowerPAK SO-8
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SIRA10DP-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.77	Get Quote

SIRA10DP Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIRA10DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A SO-8		Original	PDF

SIRA10DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SPICE Device Model SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	SiRA10DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET	Original	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
SiRA10DP Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: SiRA10DP www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (MAX.) ID (A) a, g 0.0037 at VGS = 10 V 60 g 0.0050 at VGS = 4.5 V g 60 Qg (TYP.) 15.4 nC PowerPAK SO-8 Single D 5 D 6 D 7 D 8 • TrenchFET® Gen IV power MOSFET	Original	SiRA10DP SiRA10DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: SiRA10DP_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	SiRA10DP AN609, 2338m 7624u 2250m 2783m 2650m 8961m 8993u 17-Feb-12	PDF
Contextual Info: New Product SiRA10DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)a, g 0.0037 at VGS = 10 V 30g 0.0050 at VGS = 4.5 V 30g Qg (Typ.) 15.4 nC APPLICATIONS • High Power Density DC/DC PowerPAK SO-8	Original	SiRA10DP SiRA10DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402	PDF
PowerPAK 1212-8 Abstract: mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip Contextual Info: 2005-2012:QuarkCatalogTempNew 9/20/12 4:25 PM Page 2005 25 Rectifiers, MOSFETs and Optocouplers RoHS ᭤ Innovative Products That Represent a Cross Section of Vishays Very Broad Portfolio ᭤ Products Selected for Their Versatility in Several Key Applications	Original	VT1045BP-M3/4W VBT1045BP-E3/4W VFT1045BP-M3/4W VT2045BP-M3/4W VBT2045BP-E3/4W VFT2045BP-M3/4W VT3045BP-M3/4W VBT3045BP-E3/4W VFT3045BP-M3/4W VT4045BP-M3/4W PowerPAK 1212-8 mosfet so8 smd dip4 PowerPAK SO-8 CNY65 CROSS SISA12DN-T1-GE3 SMD-4 CNY66 CROSS VBT4045BP-E3 4 dip	PDF
v0615a Contextual Info: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer Stationary Computing Servers 4 Embedded Systems 5 Solid-State Discs SSDs 6 UPS 7	Original	J-STD-020 SC-70 WSL1206 VMN-MS6761-1212 v0615a	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836	PDF
POWERPAK SO8 Abstract: SIS32 Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V	Original	SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32	PDF
SMD resistors codes Contextual Info: Vishay Intertechnology, Inc. Computer Stationary Computing One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Computer デスクトップPC サーバー 4 組み込み型システム 5 SSD（ソリッドステートディスク） 6	Original	J-STD-020 SC-70 WSL1206 VMN-MS6792-1304-COSC SMD resistors codes	PDF