SINGLE 1500V TRANSISTOR Search Results
SINGLE 1500V TRANSISTOR Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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TLX9160T |
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Photorelay (MOSFET output), 1a, 1500V/0.05A, 5000 Vrms, SO16L-T, Automotive |
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2SC6026MFV |
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NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 |
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TTC5886A |
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NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold |
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TTA2097 |
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PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold |
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TPCP8515 |
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NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 |
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SINGLE 1500V TRANSISTOR Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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LT1817 transistor
Abstract: LT1815 LT1815CS5 LT1815IS5 marking G28 G28 SOT-23 g28 SOT23 marking g31 sot23 1817I LTNQ
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LT1815 LT1816/LT1817 220MHz, 220MHz OT-23, 800nA LT1395/LT1396/LT1397 400MHz LT1806/LT1807 325MHz, LT1817 transistor LT1815 LT1815CS5 LT1815IS5 marking G28 G28 SOT-23 g28 SOT23 marking g31 sot23 1817I LTNQ | |
LT1815
Abstract: LT1815CS5 LT1815IS5 marking g31 sot23
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LT1815 LT1816/LT1817 220MHz, 220MHz OT-23 800nA LT1395/LT1396/LT1397 400MHz LT1806/LT1807 325MHz, LT1815 LT1815CS5 LT1815IS5 marking g31 sot23 | |
H12A TO8-12
Abstract: Dual Comparators fet input LH0033CG LH0032 op amp H12A LH0033 LH0033C LH0033G
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LH0033 LH0033C 100MHz 103ns 250mA 100mA) 150pF 300pF LH0033 H12A TO8-12 Dual Comparators fet input LH0033CG LH0032 op amp H12A LH0033C LH0033G | |
LH0033
Abstract: LH0033CG Calogic buffers H12A TO8-12 LM711 H12A LH0033C LH0033G LH0032
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LH0033 LH0033C 100MHz 103ns 250mA 100mA) 150pF 300pF LH0033 LH0033CG Calogic buffers H12A TO8-12 LM711 H12A LH0033C LH0033G LH0032 | |
LH0032Contextual Info: Fast Buffer LLC LH0033 / LH0033C FEATURES GENERAL DESCRIPTION • Slew rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V/µs • Wide range single or dual supply operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100MHz |
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LH0033 LH0033C 500V/Â 100MHz 103ns 250mA 100mA 150pF 300pF LH0032 | |
LT1817 transistor
Abstract: LT1815 LT1816 LT1817 pnp 1500v 8a
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LT1815/LT1816/LT1817 220MHz, 220MHz 500V/s 800nA OT-23 LT1395/LT1396/LT1397 400MHz 00V/s, LT1806/LT1807 LT1817 transistor LT1815 LT1816 LT1817 pnp 1500v 8a | |
Contextual Info: LT1815/LT1816/LT1817 Single/Dual/Quad 220MHz, 1500V/µs Operational Amplifiers with Programmable Supply Current DESCRIPTION FEATURES n n n n n n n n n n n n n n n 220MHz Gain-Bandwidth Product 1500V/ s Slew Rate 6.5mA Supply Current per Amplifier Programmable Current Option |
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LT1815/LT1816/LT1817 220MHz, 500V/Â 220MHz 800nA OT-23 LT1395/LT1396/LT1397 400MHz LT1806/LT1807 | |
LH0033
Abstract: op amp automatic offset H12A LH0033C LH0033CG LH0033G LH0032
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LH0033 100MHz 250mA 150pF 150pF -300pF 220S2 000fl2tà 1000pF LH0033 op amp automatic offset H12A LH0033C LH0033CG LH0033G LH0032 | |
Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF10N300C IC110 10N300C | |
Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C |
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MMIX1B15N300C IC110 15N300C | |
Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat 6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF15N300C IC110 15N300C | |
Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor MMIX1B20N300C VCES = 3000V IC110 = 20A VCE sat 6.0V (Electrically Isolated Tab) C Symbol Test Conditions G Maximum Ratings VCES TJ = 25°C to 150°C |
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MMIX1B20N300C IC110 20N300C | |
Contextual Info: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF20N360 IC110 20N360 H7-B11) | |
Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat 3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF20N360 IC110 20N360 H7-B11) | |
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IXBFContextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C 3000 |
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IXBF42N300 IC110 IC110 100ms 100ms 42N300 IXBF | |
Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C |
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IC110 IXBF42N300 100ms 42N300 | |
Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF42N300 VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C |
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IXBF42N300 IC110 IC110 100ms 100ms 42N300 | |
Contextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ |
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IXBT42N300HV IC110 O-268 100ms 42N300 1-09-12-A | |
IXBT42N300HV
Abstract: transistor 42A
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IXBT42N300HV IC110 O-268 IC110 100ms 42N300 1-09-12-A IXBT42N300HV transistor 42A | |
Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M |
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IXBF28N300 100ms 28N300 | |
Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF14N300 VCES = 3000V IC90 = 14A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF14N300 100ms 14N300 | |
Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF22N300 VCES = 3000V IC90 = 22A VCE sat 2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C |
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IXBF22N300 100ms 22N300 3-10-14-A | |
Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol IXBV22N300S Test Conditions VCES = 3000V IC110 = 22A VCE sat 2.7V PLUS220SMDHV Maximum Ratings VCES TJ = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1M |
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IXBV22N300S IC110 PLUS220SMDHV 100ms 22N300 3-10-14-A | |
Contextual Info: T O SH IB A 2SC5386 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SC5386 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV J 5 .5 ± 0 .5 HIGH SPEED SWITCHING APPLICATIONS • • • • i/i High Voltage : VCBO= 1500V |
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2SC5386 95MAX |