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    IXBF Price and Stock

    IXYS Corporation IXBF20N360

    IGBT 3600V 45A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF20N360 Tube 376 1
    • 1 $71.41
    • 10 $71.41
    • 100 $55.1152
    • 1000 $55.1152
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    Mouser Electronics IXBF20N360 466
    • 1 $68.18
    • 10 $64.85
    • 100 $55.11
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    TTI IXBF20N360 Tube 300
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    • 1000 $93.57
    • 10000 $93.57
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    New Advantage Corporation IXBF20N360 20 1
    • 1 -
    • 10 $174.26
    • 100 $160.85
    • 1000 $160.85
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    Vyrian IXBF20N360 109
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    IXYS Corporation IXBF12N300

    IGBT 3000V 26A ISOPLUS I4-PAC
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    DigiKey IXBF12N300 Tube 25
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    • 100 $24.3752
    • 1000 $24.3752
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    IXYS Corporation IXBF55N300

    IGBT 3000V 86A ISOPLUS I4-PAC
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    DigiKey IXBF55N300 Tube 300
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    • 1000 $90.79073
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    Mouser Electronics IXBF55N300
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    TTI IXBF55N300 Tube 300
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    • 1000 $121.05
    • 10000 $121.05
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    IXYS Corporation IXBF32N300

    IGBT 3000V 40A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF32N300 Tube 1
    • 1 $93.27
    • 10 $93.27
    • 100 $76.0508
    • 1000 $76.0508
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    Mouser Electronics IXBF32N300
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    TTI IXBF32N300 Tube 300
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    • 1000 $131.36
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    Vyrian IXBF32N300 123
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    IXYS Corporation IXBF40N160

    IGBT 1600V 28A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF40N160 Tube 25
    • 1 -
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    • 100 $22.8076
    • 1000 $22.8076
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    Mouser Electronics IXBF40N160
    • 1 $27.51
    • 10 $24.46
    • 100 $20.19
    • 1000 $20.19
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    TME IXBF40N160 1
    • 1 $23.49
    • 10 $19.6
    • 100 $19.08
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    IXBF Datasheets (20)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBF10N300C
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 29A 240W ISOPLUSI4 Original PDF
    IXBF12N300
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 26A 125W ISOPLUSI4 Original PDF
    IXBF15N300C
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 37A 300W ISOPLUSI4 Original PDF
    IXBF20N300
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 34A 150W ISOPLUSI4 Original PDF
    IXBF20N360
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3600V 45A ISOPLUS I4PAK Original PDF
    IXBF32N300
    		IXYS IGBTs - Single, Discrete Semiconductor Products, IGBT 3000V 40A 160W ISOPLUSI4 Original PDF
    IXBF 40N140
    		IXYS TRANS IGBT CHIP N-CH 1400V 28A 3ISOPLUS I4-PAC Original PDF
    IXBF40N140
    		IXYS Discrete IGBTs Original PDF
    IXBF 40N160
    		IXYS TRANS IGBT CHIP N-CH 1600V 28A 3ISOPLUS I4-PAC Original PDF
    IXBF40N160
    		IXYS Discrete IGBTs Original PDF
    IXBF42N300
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3000V TO247 Original PDF
    IXBF50N360
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3600V 70A 290W I4-PAK Original PDF
    IXBF 9N140
    		IXYS TRANS IGBT CHIP N-CH 1400V 7A 3ISOPLUS I4-PAC Original PDF
    IXBF9N140
    		IXYS High Voltage BIMOSFET Original PDF
    IXBF 9N140 G
    		IXYS TRANS IGBT CHIP N-CH 1400V 7A 3ISOPLUS I4-PAC Original PDF
    IXBF9N140G
    		IXYS High Voltage BIMOSFET in High Voltage ISOPLUS i4-PAC Original PDF
    IXBF 9N160
    		IXYS TRANS IGBT CHIP N-CH 1600V 7A 3ISOPLUS I4-PAC Original PDF
    IXBF9N160
    		IXYS High Voltage BIMOSFET Original PDF
    IXBF 9N160 G
    		IXYS TRANS IGBT CHIP N-CH 1600V 7A 3ISOPLUS I4-PAC Original PDF
    IXBF9N160G
    		IXYS High Voltage BIMOSFET in High Voltage ISOPLUS i4-PAC Original PDF

    IXBF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IXBF20N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC90 = 15A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF20N300 20N300 1-23-09-A IXBF20N300 PDF

    Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF15N300C VCES = 3000V IC110 = 15A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF15N300C IC110 15N300C PDF

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N300 VCES = 3000V IC110 = 14A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBF20N300 IC110 IC110 50/60Hz, 20N300 6-05-12-B PDF

    IXBF12N300

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBF12N300 IC110 IC110 50/60Hz, 12N300 6-07-12-B IXBF12N300 PDF

    Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C


    Original     		9N160 9-140/160G PDF

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V IXBF32N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF32N300 32N300 PDF

    Contextual Info: High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 11A VCE sat ≤ 3.2V IXBF12N300 (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IC110 IXBF12N300 12N300 6-07-12-B PDF

    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF28N300 VCES = 3000V IC90 = 28A VCE sat  2.7V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ VCGR TJ = 25°C to 150°C, RGE = 1M


    Original     		IXBF28N300 100ms 28N300 PDF

    Contextual Info: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF20N360 IC110 20N360 H7-B11) PDF

    9N160

    Abstract: 9N140 IXBF 9N140
    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		9N140 9N160 9N140 9N160 IXBF09 IXBF 9N140 PDF

    40N160

    Abstract: 40N140
    Contextual Info: Advanced Technical Information IXBF 40N140 IC25 IXBF 40N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 28 A 1400/1600 V 6.2 V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		40N140 40N160 40N140 40N160 IXBF40 PDF

    Contextual Info: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		40N160 IXBF40 PDF

    Contextual Info: Preliminary Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor VCES = 3000V IC110 = 24A VCE sat ≤ 3.0V IXBF42N300 (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IC110 IXBF42N300 100ms 42N300 PDF

    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM =7A = 1400/1600 V = 4.9V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings


    Original     		9N140 9N160 9N160 PDF

    Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF20N360 IC110 20N360 H7-B11) PDF

    9N160

    Abstract: 100w 5a IGBT
    Contextual Info: Advanced Technical Information IXBF 9N140 IC25 IXBF 9N160 VCES High Voltage BIMOSFETTM VCE sat tf in High Voltage ISOPLUS i4-PACTM = = = = 7A 1400/1600 V 4.9V 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C


    Original     		9N140 9N160 9N140 9N160 IXBF09 100w 5a IGBT PDF

    IXBF12N300

    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF12N300 12N300 1-23-09-A IXBF12N300 PDF

    IXBF55N300

    Abstract: transistor 537 b 360 isoplus ixys mounting
    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) Symbol Test Conditions ISOPLUS i4-PakTM Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300 transistor 537 b 360 isoplus ixys mounting PDF

    Contextual Info: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF10N300C VCES = 3000V IC110 = 10A VCE sat  6.0V (Electrically Isolated Tab) ISOPLUS i4-PakTM mbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF10N300C IC110 10N300C PDF

    IXBF32N300

    Abstract: B32N ic901 32N300 32N30
    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF32N300 VCES = 3000V IC90 = 22A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF32N300 32N300 IXBF32N300 B32N ic901 32N30 PDF

    IXBF12N300

    Abstract: ixbf12n30 ic901
    Contextual Info: Preliminary Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF12N300 VCES = 3000V IC90 = 12A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF12N300 12N300 IXBF12N300 ixbf12n30 ic901 PDF

    IXBF55N300

    Abstract: 55N300
    Contextual Info: Advance Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBF55N300 VCES = 3000V IC110 = 28A VCE sat ≤ 3.2V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original     		IXBF55N300 IC110 55N300 0-22-09-A IXBF55N300 PDF

    Contextual Info: IXBF 9N160 G IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 7A = 1600 V = 4.9 V = 70 ans Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions Maximum Ratings VCES VGES TVJ = 25°C to 150°C IC25 IC90 TC = 25°C TC = 90°C


    Original     		9N160 9-140/160G PDF

    40N160

    Abstract: 40N140
    Contextual Info: IXBF 40N160 IC25 VCES VCE sat tf High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM = 28 A = 1600 V = 6.2 V = 40 ns Monolithic Bipolar MOS Transistor 1 5 Features IGBT Conditions VCES TVJ = 25°C to 150°C Maximum Ratings VGES IC25 IC90 TC = 25°C TC = 90°C


    Original     		40N160 vol600 IXBF40 40N160 40N140 PDF