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    IXBF20N360 Search Results

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    IXBF20N360 Price and Stock

    IXYS Corporation IXBF20N360

    IGBT 3600V 45A ISOPLUS I4-PAC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBF20N360 Tube 409 1
    • 1 $71.41
    • 10 $71.41
    • 100 $55.1152
    • 1000 $55.1152
    • 10000 $55.1152
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    Mouser Electronics IXBF20N360 489
    • 1 $69.01
    • 10 $64.84
    • 100 $55.11
    • 1000 $55.11
    • 10000 $55.11
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    Future Electronics IXBF20N360 Tube 39 Weeks 225
    • 1 -
    • 10 -
    • 100 $59.12
    • 1000 $59.12
    • 10000 $59.12
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    TTI IXBF20N360 Tube 300
    • 1 -
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    • 100 -
    • 1000 $53.77
    • 10000 $53.77
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    New Advantage Corporation IXBF20N360 20 1
    • 1 -
    • 10 $135.57
    • 100 $126.53
    • 1000 $126.53
    • 10000 $126.53
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    Littelfuse Inc IXBF20N360

    Igbt, 3.6Kv, 45A, 150Deg C, 230W; Continuous Collector Current:45A; Collector Emitter Saturation Voltage:2.9V; Power Dissipation:230W; Collector Emitter Voltage Max:3.6Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBF20N360
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBF20N360 Bulk 25 1
    • 1 $40.83
    • 10 $40.83
    • 100 $40.83
    • 1000 $40.83
    • 10000 $40.83
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    RS IXBF20N360 Bulk 8 Weeks 25
    • 1 -
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    • 100 $85.25
    • 1000 $85.25
    • 10000 $85.25
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    IXBF20N360 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBF20N360 IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3600V 45A ISOPLUS I4PAK Original PDF

    IXBF20N360 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF20N360 IC110 20N360 H7-B11) PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Information High Voltage, High Frequency, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBF20N360 VCES = 3600V IC110 = 18A VCE sat  3.4V (Electrically Isolated Tab) ISOPLUS i4-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C


    Original     		IXBF20N360 IC110 20N360 H7-B11) PDF