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    IXBT42N300HV Search Results

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    IXBT42N300HV Price and Stock

    IXYS Corporation IXBT42N300HV

    IGBT 3000V 104A TO-268HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBT42N300HV Tube 320 1
    • 1 $55.16
    • 10 $55.16
    • 100 $40.23267
    • 1000 $40.23267
    • 10000 $40.23267
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    Mouser Electronics IXBT42N300HV 2,908
    • 1 $53.64
    • 10 $48.77
    • 100 $40.23
    • 1000 $40.23
    • 10000 $40.23
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    TTI IXBT42N300HV Tube 300
    • 1 -
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    • 100 -
    • 1000 $53.64
    • 10000 $53.64
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    TME IXBT42N300HV 1
    • 1 $60.32
    • 10 $47.91
    • 100 $44.63
    • 1000 $44.63
    • 10000 $44.63
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    Vyrian IXBT42N300HV 154
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    Littelfuse Inc IXBT42N300HV

    Igbt, Single, 3Kv, 104A, To-268Hv; Continuous Collector Current:104A; Collector Emitter Saturation Voltage:2.5V; Power Dissipation:500W; Collector Emitter Voltage Max:3Kv; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Littelfuse IXBT42N300HV
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark IXBT42N300HV Bulk 207 1
    • 1 $54.06
    • 10 $46.74
    • 100 $39.43
    • 1000 $39.43
    • 10000 $39.43
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    RS IXBT42N300HV Bulk 8 Weeks 30
    • 1 -
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    • 100 $62.23
    • 1000 $62.23
    • 10000 $62.23
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    IXBT42N300HV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXBT42N300HV
    		IXYS Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT 3000V 42A 357W TO268 Original PDF

    IXBT42N300HV Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBT42N300HV IC110 O-268 100ms 42N300 1-09-12-A PDF

    IXBT42N300HV

    Abstract: transistor 42A
    Contextual Info: Advance Technical Information High Voltage, BiMOSFETTM Monolithic Bipolar MOS Transistor IXBT42N300HV VCES = 3000V IC110 = 42A VCE sat ≤ 3.0V TO-268 Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 3000 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original     		IXBT42N300HV IC110 O-268 IC110 100ms 42N300 1-09-12-A IXBT42N300HV transistor 42A PDF