SILICON ON INSULATOR SRAM Search Results

SAE J2411

Abstract: rain sensor BOSCH for car application steering controlled headlight report ecu Bosch ICs car ecu microprocessors 24 v temic ecu list of sensors used in bmw car BOSCH ECU microcontroller microprocessors used in car ecus siemens ecu VDO
Contextual Info: Semiconductors Philips - the vital link in the interconnected car Semiconductors Advancing silicon for automotive processes Connecting flexible intelligence in the car Philips’ SOI Silicon-on-Insulator technology is the Meeting the comfort, convenience, safety and security demands of

bsim3

Abstract: IMD2 transistor metal oxide in capacitor "X-Fab" Core cell library transistor ag metal sheet thickness sensor 45 nm library breakdown gate oxide
Contextual Info: 1.0 µm SOI Process 1.0 µm Silicon-On-Insulator Technology 1.0 µm Non-fully Depleted SOI Technology with: Applications 1000 nm Box Oxide - Dielectric Isolated Mixed-Signal multi voltage systems 250 nm Active Silicon 25 nm Gate Oxide Thickness - High Temperature

Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jam Process (Leff = 0.6 ^m) • Total Dose Hardness through 1x106 rad (S i0 2)

HX6356

Abstract: smd transistor AL2
Contextual Info: Honeywell Aerospace Electronics 32K X 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 pm Process (Leff= 0.6 |iim) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(Si02)

CDIP2-T28

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |nm Process (Leff= 0.6 (xm) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

nmos dynamic ram 6256

Abstract: HX6256 D-10
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

HX6256

Abstract: D-10
Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

Contextual Info: Honeywell Aerospace Electronics HX6356 32K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j.m Process (Left= 0.6 (im) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

Contextual Info: Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD#5962–95845 • Total Dose Hardness through 1x106 rad(SiO2)

AVW smd

Contextual Info: Honeywell Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 jim Process (Lett = 0.6 jxm) • Total Dose Hardness through 1x10 rad (S i0 2)

LAD R

Contextual Info: Honeywel Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • • Listed on SMD #5962-96840 Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff = 0.6 |a,m) • Total Dose Hardness through 1x106 rad (S i0 2)

honeywell hx3000

Abstract: HX3000
Contextual Info: HIGH PERFORMANCE SOI-V GATE ARRAYS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened TM 0.30µm Leff RICMOS Silicon On Insulator (SOI-V) process Array Sizes to 1.0M Usable Gates 3.3V or 2.5V Core Operation

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)

5962-95845

Abstract: HX6356
Contextual Info: Honeywell Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106rad(S i02)

HRT6408

Abstract: HX6408 honeywell memory sram CDR33 S150 129a1
Contextual Info: HRT6408 HRT6408 512k x 8 Static RAM Radiation Tolerant Features • ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read/Write Cycle Times Typical Write = 7 ns Typical Read = 12ns ■ Asynchronous Operation ■ CMOS Compatible I/O

HS-65647RH

Abstract: symposium
Contextual Info: Special ESD Considerations for the HS-65643RH and HS-65647RH Radiation Hardened SOS SRAMs Application Note June 1992 AN9106 Author: Steve Rivet The HS-65643RH and HS-65647RH SRAMs are fabricated on TSOS4, an advanced 1.25mm dual level metal silicon on sapphire process. The sapphire substrate used in this process is an excellent electrical insulator, and allows the

honeywell sn f10

Abstract: HX6356 A12 SMD TRANSISTOR Honeywell load cell
Contextual Info: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times

HX6356

Contextual Info: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times

honeywell hx3000

Abstract: 440K HX3000 HX306G
Contextual Info: HIGH PERFORMANCE SOI-V ASICS HX3000 FAMILY FEATURES • • • • • • • Fabricated on Honeywell’s Radiation Hardened 0.30µm Leff RICMOSTM Silicon On Insulator (SOI-V) process ASICS to 2.0M Usable Gates 3.3V or 2.5V Core Operation Mixed Voltage I/O Power Supply (2.5V, 3.3V)

HX84050

Contextual Info: Military & Space Products 5 MEGABIT MEMORY MODULE HX84050 RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed on SMD #5962-96840 6 • Total Dose Hardness through 1x10 rad (SiO2) • Neutron Hardness through 1x1014 cm-2

smd transistor NJ

Contextual Info: Honeywell Military & Space Products 32K x 8 STATIC RAM— SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |a,m Process (Leff= 0.6 |a,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106 rad(S i02)

Contextual Info: Aerospace Electronics 32K x 8 STATIC RAM—SOI HX6356 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 µm Process (Leff = 0.6 µm) • Listed On SMD# 5962-95845 • Total Dose Hardness through 1x106 rad(SiO2) • Fast Read/Write Cycle Times

Contextual Info: HLXSR01632 512K x 32 Low Power Static RAM 1.5V Core VDD Features • ■ ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read Cycle Times Typical ≤20ns Worst case ≤ 25ns Write Cycle Times Typical ≤ 9ns Worst case ≤ 12ns

ibm edram

Abstract: Cu-45HP CU45HP IBM HSS TGD03009-USEN-01 Ternary CAM
Contextual Info: IBM Systems and Technology Group IBM Cu-45HP Take semiconductor performance to new heights with an innovative SOI-based design system A new breed of custom logic Highlights ● Boost performance for next-generation applications with silicon-on-insulator SOI technology