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    Adam Technologies Inc SW-PB7-03LB22CFRG12V

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    DigiKey SW-PB7-03LB22CFRG12V Box 53 1
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    Powell Electronics SW-PB7-03LB22CFRG12V 53 100
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    Adam Technologies Inc SW-PB7-03LB22CFRR12V

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    DigiKey SW-PB7-03LB22CFRR12V Box 39 1
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    Adam Technologies Inc SW-PB7-03LB22CFRB12V

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    DigiKey SW-PB7-03LB22CFRB12V Box 38 1
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    Mouser Electronics SW-PB7-03LB22CFRB12V
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    Cornell Dubilier Electronics Inc 947D371K122CFRSN

    CAP FILM 370UF 10% 1.2KVDC RAD
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    Mouser Electronics 947D371K122CFRSN
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    Newark 947D371K122CFRSN Bulk 24
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    Richardson RFPD 947D371K122CFRSN 24
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    Adam Technologies Inc SW-PB7-03LB22CFRY6V

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    22CFR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HX1750

    Abstract: mil-std-1750a 1750a 1750A processor architecture honeywell defense Honeywell 1 day timer MIL-STD-1750
    Text: HX1750 MIL-STD-1750A Microprocessor The HX1750 is a true single chip implementation of the MIL-STD-1750A instruction set architecture, fabricated on Honeywell's Silicon on Insulator CMOS SOI-IV process. It combines a fast 16 bit microprocessor, a 40 bit floating point processor,


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    HX1750 MIL-STD-1750A HX1750 MIL-STD-1750A 22CFR 1750a 1750A processor architecture honeywell defense Honeywell 1 day timer MIL-STD-1750 PDF

    5962-07A05

    Abstract: HX422D MIL-PRF38535 ES1V
    Text: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V


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    HX422D RS422 20MHz HX422D RS422 22CFR N61-0999-000-000 5962-07A05 MIL-PRF38535 ES1V PDF

    Untitled

    Abstract: No abstract text available
    Text: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V


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    HX422D RS422 20MHz HX422D RS422 22CFR N61-0999-000-000 PDF

    HMXADC9246

    Abstract: honeywell dcs manual honeywell SOI CMOS solid state 220 volt stabilizer circuit honeywell dcs features radiation hardened prom
    Text: HMXADC9246 Preliminary Radiation Hardened 14-Bit, 125 MSPS Monolithic A/D Converter Features • Monolithic 14-Bit, 125 MSPS A/D Converter ■ Rad Hard: >1M Rad Si Total Dose ■ +1.8V V Analog Supply ■ +1.8V to 3.3V Digital I/O Supply ■ Low Power: 400 mW at 125 MSPS


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    HMXADC9246 14-Bit, HMXADC9246 22CFR N61-0996-000-000 honeywell dcs manual honeywell SOI CMOS solid state 220 volt stabilizer circuit honeywell dcs features radiation hardened prom PDF

    honeywell memory sram

    Abstract: hx6408 HXS6408
    Text: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating


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    HXS6408 150nm HXS6408 22CFR honeywell memory sram hx6408 PDF

    Untitled

    Abstract: No abstract text available
    Text: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan


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    HXBUSX18 100MHz HXBUSX18 22CFR N61-1002-000-000 PDF

    hxlvdsr

    Abstract: 5962-07A03 MIL-PRF38535 S150
    Text: HXLVDSR Quad LVDS Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Receiver Enable Control ■ High Impedance LVDS Inputs ■ Tristate Output Capability


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    100MHz 100mV 500mW 100MHz. 22CFR N61-1003-000-000 hxlvdsr 5962-07A03 MIL-PRF38535 S150 PDF

    HXSR06432

    Abstract: S150 86-LEAD honeywell memory sram
    Text: PRELIMINARY HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , radiation hardened 64M Honeywell’s state-of-the-art S150 technology is bit Static Random Access Memory (SRAM) in a 2M x radiation hardened through the use of advanced and 32 configuration is a high performance 2,097, 152 word


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    HXSR06432 512kx32 150nm 400product 22CFR HXSR06432 S150 86-LEAD honeywell memory sram PDF

    MIL-PRF38535

    Abstract: No abstract text available
    Text: HXLVDSD Quad LVDS Differential Line Driver Radiation Hardened 3.3V SOI CMOS Features • ■ Four Independent Drivers Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Driver Enable Control ■ Tristate Outputs ■ ■ ■ ■ Temperature Range:


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    250mV 100MHz 300mW 100MHz. 22CFR N61-1001-000-000 MIL-PRF38535 PDF

    HX422R

    Abstract: 5962-07A04
    Text: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C


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    HX422R RS422 TIA/EIA-422-B 20Mb/s HX422R 22CFR N61-1000-000-000 5962-07A04 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Fabricated on Silicon On Insulator SOI CMOS Technology SOI4 Process (Leff = 0.8 um) Total Dose Hardness ≥ 300k rad (Si) Dose Rate Upset Hardness


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    HMXMUX01 1x109 1x1012 1x1014 120ns HMXMUX01 22CFR N59-0506-000-000 PDF

    BU63825X2

    Abstract: BU-63825
    Text: BU-63825 SPACE LEVEL MIL-STD-1553 BC/RT/MT ADVANCED COMMUNICATION ENGINE SP’ACE II TERMINAL FEATURES Make sure the next Card you purchase has. • Direct Replacement for BU-61582 and BU-61583 • Radiation Tolerant & Radiation Hardened Versions


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    BU-63825 MIL-STD-1553 BU-61582 BU-61583 BU-63825 BU-61582 A5976 DS-BU-63825-R BU63825X2 PDF

    Untitled

    Abstract: No abstract text available
    Text: HMXCMP01 Radiation Hardened Comparator Features • ■ ■ ■ ■ Rad Hard >300krad Si Analog supply voltage: 4.75V to 5.25V Digital supply voltage: 3.135V to 5.25V Supply current: <2mA Common mode voltage range: 0V to 5V ■ Input offset voltage: <24mV


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    HMXCMP01 300krad 125ns HMXCMP01 22CFR N61-0997-000-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: PWR-82332 SMART POWER 3-PHASE MOTOR DRIVE FOR SPACE APPLICATIONS FEATURES DESCRIPTION APPLICATIONS The PWR-82332 is a Smart Power 3-phase Motor Drive hybrid. The PWR-82332 uses a MOSFET output stage with 400 VDC rating, and can deliver 19A continuous current


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    PWR-82332 PWR-82332 1-800-DDC-5757 K-12/10-0 PDF

    HX6408

    Abstract: No abstract text available
    Text: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating


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    HXS6408 150nm ADS-14163 HX6408 PDF

    inductosyn

    Abstract: Linear inductosyn
    Text: Make sure the next Card you purchase has. OSC-15803 RADIATION TOLERANT SYNCHRO/ RESOLVER/INDUCTOSYN REFERENCE OSCILLATOR ® FEATURES • Quadrature Reference Output Voltages for Inductosyn Applications • Programmable Output Frequency from 400 Hz to 20 kHz


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    OSC-15803 18-Pin OSC-15803 1-800-DDC-5757 A5976 B-11/10-0 inductosyn Linear inductosyn PDF

    HXSR06432

    Abstract: honeywell memory sram S150
    Text: Preliminary HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , radiation hardened 64M proprietary design, layout and process hardening bit Static Random Access Memory (SRAM) in a 2M x techniques. There is no internal EDAC implemented. 32 configuration is a high performance 2,097,152 word


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    HXSR06432 512kx32 150nm 500mW 40MHz 22CFR HXSR06432 honeywell memory sram S150 PDF

    5962-07A06

    Abstract: tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 HXBUSX18
    Text: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan


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    HXBUSX18 100MHz HXBUSX18 22CFR N61-1002-000-000 5962-07A06 tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 PDF

    5962-07A04

    Abstract: HX422R smd transistor bq 22 bq 726 MIL-PRF38535 S150 honeywell defense
    Text: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C


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    HX422R RS422 TIA/EIA-422-B 20Mb/s HX422R 200mW 22CFR N61-1000-000-000 5962-07A04 smd transistor bq 22 bq 726 MIL-PRF38535 S150 honeywell defense PDF

    HRT6408

    Abstract: HX6408 honeywell memory sram CDR33 S150 129a1
    Text: HRT6408 HRT6408 512k x 8 Static RAM Radiation Tolerant Features • ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read/Write Cycle Times Typical Write = 7 ns Typical Read = 12ns ■ Asynchronous Operation ■ CMOS Compatible I/O


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    HRT6408 HRT6408 3X105 1x10-12 2x10-12 1x1014 36-Lead 22CFR N61-1004-000-000 HX6408 honeywell memory sram CDR33 S150 129a1 PDF

    HXSR01608

    Abstract: No abstract text available
    Text: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low


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    HXSR01608 150nm ADS-14155 HXSR01608 PDF

    HXSRD01

    Abstract: 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor
    Text: HXSRD01 Trivor SERDES Quad Redundant Transceiver Radiation Hardened Features • Fabricated on S150 Silicon On Insulator SOI CMOS ■ ■ 150 nm Process (Leff = 110 nm) 4 Channel (Quad) Transceiver with Redundant Transmitters ■ Channel Data Rates to 3.1875Gb/s


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    HXSRD01 1875Gb/s 10Gb/s 1X106 1x10-12 2x10-12 1x1014 1x1010 1x1012 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: HXLVDSR Quad LVDS Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Receiver Enable Control ■ High Impedance LVDS Inputs ■ Tristate Output Capability


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    100MHz 100mV 500mW 100MHz. 22CFR N61-1003-000-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: HXLVDSD Quad LVDS Differential Line Driver Radiation Hardened 3.3V SOI CMOS Features • ■ Four Independent Drivers Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Driver Enable Control ■ Tristate Outputs ■ ■ ■ ■ Temperature Range:


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    250mV 100MHz 300mW 100MHz. 22CFR N61-1001-000-000 PDF