22CFR Search Results

HX1750

Abstract: mil-std-1750a 1750a 1750A processor architecture honeywell defense Honeywell 1 day timer MIL-STD-1750
Contextual Info: HX1750 MIL-STD-1750A Microprocessor The HX1750 is a true single chip implementation of the MIL-STD-1750A instruction set architecture, fabricated on Honeywell's Silicon on Insulator CMOS SOI-IV process. It combines a fast 16 bit microprocessor, a 40 bit floating point processor,

5962-07A05

Abstract: HX422D MIL-PRF38535 ES1V
Contextual Info: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V

Contextual Info: HX422D Radiation Hardened Quad RS422 Differential Line Driver Features • Four Independent Drivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ Tristate Outputs ■ Common Driver Enable Control ■ ■ ■ Minimum Output Differential Voltage: 2V

HMXADC9246

Abstract: honeywell dcs manual honeywell SOI CMOS solid state 220 volt stabilizer circuit honeywell dcs features radiation hardened prom
Contextual Info: HMXADC9246 Preliminary Radiation Hardened 14-Bit, 125 MSPS Monolithic A/D Converter Features • Monolithic 14-Bit, 125 MSPS A/D Converter ■ Rad Hard: >1M Rad Si Total Dose ■ +1.8V V Analog Supply ■ +1.8V to 3.3V Digital I/O Supply ■ Low Power: 400 mW at 125 MSPS

honeywell memory sram

Abstract: hx6408 HXS6408
Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating

Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

hxlvdsr

Abstract: 5962-07A03 MIL-PRF38535 S150
Contextual Info: HXLVDSR Quad LVDS Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Receiver Enable Control ■ High Impedance LVDS Inputs ■ Tristate Output Capability

HXSR06432

Abstract: S150 86-LEAD honeywell memory sram
Contextual Info: PRELIMINARY HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , radiation hardened 64M Honeywell’s state-of-the-art S150 technology is bit Static Random Access Memory (SRAM) in a 2M x radiation hardened through the use of advanced and 32 configuration is a high performance 2,097, 152 word

MIL-PRF38535

Contextual Info: HXLVDSD Quad LVDS Differential Line Driver Radiation Hardened 3.3V SOI CMOS Features • ■ Four Independent Drivers Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Driver Enable Control ■ Tristate Outputs ■ ■ ■ ■ Temperature Range:

HX422R

Abstract: 5962-07A04
Contextual Info: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C

Contextual Info: HMXMUX01 8-Channel Analog Multiplexer Radiation Hardened Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Fabricated on Silicon On Insulator SOI CMOS Technology SOI4 Process (Leff = 0.8 um) Total Dose Hardness ≥ 300k rad (Si) Dose Rate Upset Hardness

BU63825X2

Abstract: BU-63825
Contextual Info: BU-63825 SPACE LEVEL MIL-STD-1553 BC/RT/MT ADVANCED COMMUNICATION ENGINE SP’ACE II TERMINAL FEATURES Make sure the next Card you purchase has. • Direct Replacement for BU-61582 and BU-61583 • Radiation Tolerant & Radiation Hardened Versions

Contextual Info: HMXCMP01 Radiation Hardened Comparator Features • ■ ■ ■ ■ Rad Hard >300krad Si Analog supply voltage: 4.75V to 5.25V Digital supply voltage: 3.135V to 5.25V Supply current: <2mA Common mode voltage range: 0V to 5V ■ Input offset voltage: <24mV

Contextual Info: PWR-82332 SMART POWER 3-PHASE MOTOR DRIVE FOR SPACE APPLICATIONS FEATURES DESCRIPTION APPLICATIONS The PWR-82332 is a Smart Power 3-phase Motor Drive hybrid. The PWR-82332 uses a MOSFET output stage with 400 VDC rating, and can deliver 19A continuous current

HX6408

Contextual Info: HXS6408 HXS6408 512k x 8 STATIC RAM The monolithic 512k x 8 Radiation Hardened Static RAM is a high performance 524,288 word x 8-bit static random access memory, fabricated with Honeywell’s 150nm silicon-on-insulator CMOS S150 technology. It is designed for use in low voltage systems operating

inductosyn

Abstract: Linear inductosyn
Contextual Info: Make sure the next Card you purchase has. OSC-15803 RADIATION TOLERANT SYNCHRO/ RESOLVER/INDUCTOSYN REFERENCE OSCILLATOR ® FEATURES • Quadrature Reference Output Voltages for Inductosyn Applications • Programmable Output Frequency from 400 Hz to 20 kHz

HXSR06432

Abstract: honeywell memory sram S150
Contextual Info: Preliminary HXSR06432 2M x 32 STATIC RAM The Multi-Chip Module MCM , radiation hardened 64M proprietary design, layout and process hardening bit Static Random Access Memory (SRAM) in a 2M x techniques. There is no internal EDAC implemented. 32 configuration is a high performance 2,097,152 word

5962-07A06

Abstract: tms 1944 1A7-B MIL-PRF38535 S150 SN54LVTH18502A tms 1601 HXBUSX18
Contextual Info: HXBUSX18 18 Bit Bidirectional Bus Transceiver Radiation Hardened 3.3V SOI CMOS Features • 18 Bit Bidirectional Bus Interface ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Power Supply ■ ■ ■ ■ ■ Supports IEEE standard 1149.1-2001 Boundary Scan

5962-07A04

Abstract: HX422R smd transistor bq 22 bq 726 MIL-PRF38535 S150 honeywell defense
Contextual Info: HX422R Quad RS422 Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Analog Supply ■ Common Receiver Enable Control ■ Tristate Outputs ■ Temperature Range: -55°C to 125°C

HRT6408

Abstract: HX6408 honeywell memory sram CDR33 S150 129a1
Contextual Info: HRT6408 HRT6408 512k x 8 Static RAM Radiation Tolerant Features • ■ ■ Fabricated on S150 Silicon On Insulator SOI CMOS 150 nm Process (Leff = 110 nm) Read/Write Cycle Times Typical Write = 7 ns Typical Read = 12ns ■ Asynchronous Operation ■ CMOS Compatible I/O

HXSR01608

Contextual Info: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low

HXSRD01

Abstract: 10Gb trivor smd transistor M21 Lanes PRBS31 w21 transistor smd 8B10B S150 honeywell material spec microcircuit w18 smd transistor
Contextual Info: HXSRD01 Trivor SERDES Quad Redundant Transceiver Radiation Hardened Features • Fabricated on S150 Silicon On Insulator SOI CMOS ■ ■ 150 nm Process (Leff = 110 nm) 4 Channel (Quad) Transceiver with Redundant Transmitters ■ Channel Data Rates to 3.1875Gb/s

Contextual Info: HXLVDSR Quad LVDS Differential Line Receiver Radiation Hardened 3.3V SOI CMOS Features • Four Independent Receivers ■ Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Receiver Enable Control ■ High Impedance LVDS Inputs ■ Tristate Output Capability

Contextual Info: HXLVDSD Quad LVDS Differential Line Driver Radiation Hardened 3.3V SOI CMOS Features • ■ Four Independent Drivers Rad Hard: >300k Rad Si Total Dose ■ Single +3.3 V Supply ■ Common Driver Enable Control ■ Tristate Outputs ■ ■ ■ ■ Temperature Range: