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    3X105 Price and Stock

    Samsung Electro-Mechanics CL03X105MR3CSNC

    CAP CER 1UF 4V X6S 0201
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    DigiKey CL03X105MR3CSNC Reel 50,000 10,000
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    CL03X105MR3CSNC Cut Tape 50,000 1
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    CL03X105MR3CSNC Digi-Reel 50,000 1
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    Avnet Americas CL03X105MR3CSNC Reel 20 Weeks 100,000
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    KEMET Corporation C0603X105K8RACAUTO

    CAP CER 1UF 10V X7R 0603
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    DigiKey C0603X105K8RACAUTO Cut Tape 15,754 1
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    C0603X105K8RACAUTO Digi-Reel 15,754 1
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    Mouser Electronics C0603X105K8RACAUTO 5,856
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    C0603X105K8RACAUTO Cut Tape 2,000 1
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    TTI C0603X105K8RACAUTO Reel 8,000 4,000
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    Avnet Abacus C0603X105K8RACAUTO Reel 11 Weeks 4,000
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    Avnet Asia C0603X105K8RACAUTO 21 Weeks 4,000
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    KEMET Corporation C0603X105K9RAC7411

    CAP CER 0603 1UF 6.3V X7R 10%
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    DigiKey C0603X105K9RAC7411 Cut Tape 14,950 1
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    C0603X105K9RAC7411 Digi-Reel 14,950 1
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    KEMET Corporation C0603X105M8RACTU

    CAP CER 0603 1UF 10V X7R 20%
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    DigiKey C0603X105M8RACTU Cut Tape 6,318 1
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    C0603X105M8RACTU Digi-Reel 6,318 1
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    C0603X105M8RACTU Reel 4,000 4,000
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    KEMET Corporation C0603X105M9RACAUTO

    CAP CER 1UF 6.3V X7R 0603
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    DigiKey C0603X105M9RACAUTO Cut Tape 5,723 1
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    Newark C0603X105M9RACAUTO Cut Tape 11,136 10
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    Avnet Abacus C0603X105M9RACAUTO Reel 11 Weeks 4,000
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    3X105 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    260GF

    Abstract: No abstract text available
    Text: SERIES EDO 6.2x6.2 mm SMT HEIGHT FROM PCB H Qty Reel Y 2,5 mm 2000 W 3,5 mm 1000 J 5,2 mm 1000 2,5 mm Tape Specification 6,2 mm 6,2 mm OPERATING FORCE - LIFE Cycles Operating Force 1 160±50gf 2 160±50gf 3 260±70gf Life (Cycles) 1x105 5x105 3x105 TERMINAL


    Original     		PDF 1x105 5x105 3x105 260GF

    Untitled

    Abstract: No abstract text available
    Text: TACT SWITCHES AUTOMATIC INSERT Radial Tape SERIES EDT • Radial Terminals • 6x6 mm size E D - T Height from PCB (h) Operating Force Life (Cycles) A B C D 1 100±50gf 2 160±50gf 3 260±70gf 5x105 3x105 1x105 4.3 5.0 7.0 9.5 mm mm mm mm SPECIFICATIONS


    Original     		PDF 5x105 3x105 1x105 12VDC 1000/Box

    Untitled

    Abstract: No abstract text available
    Text: Automation Controls Catalog Relay for control panel of 1c 15A, and 2c 10A RoHS compliant HL RELAYS FEATURES TYPICAL APPLICATIONS 1. Compact high-capacity control relay In the same external dimensions as an HC relay, this compact power relay enables high-capacity control:


    Original     		PDF E43028 B1304 ASCTB114E 201305-T

    GEC Plessey Semiconductors cross reference

    Abstract: BMA31751 MA17501 MA17502 MA17503 MA31751 MAS281 AD00 TI MIL-STD-1750A E04A
    Text: MAS281 MAS281 MIL-STD-1750A Microprocessor Replaces June 1999 version, DS3563-4.0 The MAS281 Microprocessor is a MIL-STD-1750A Notice 1 , 16-bit Central Processing Unit (CPU). It consists of three CMOS/SOS large-scale integration (LSI) chips: the MA17501


    Original     		PDF MAS281 MIL-STD-1750A DS3563-4 MAS281 MIL-STD-1750A 16-bit MA17501 MA17502 MA17503 GEC Plessey Semiconductors cross reference BMA31751 MA17501 MA31751 AD00 TI E04A

    V23086

    Abstract: V23086-R1801-A403 V23086-R1802-A803 V23086-C1001-A402 tyco V23086-c1001-a403
    Text: Automotive Relays PCB Single Relays Micro Relay K THT – THR n Small power relay continuous current 30A n Low weight n Low noise operation n Wave (THT) and reflow (THR/pin-in-paste) solderable versions n Limiting Typical applications Car alarm, door control, door lock, heated front/rear screen, immobilizer,


    Original     		PDF 086C/R1 V23086- 01-A403 02-A803 01-A402 51-A502 V23086 V23086-R1801-A403 V23086-R1802-A803 V23086-C1001-A402 tyco V23086-c1001-a403

    T810S-A008C

    Abstract: relay 6vdc
    Text: T810S-A008C E L E C T R O N I C S 汽 车 继 电 器 TRS ● 30A 13.5VDC switching rating ● 40A inrush at 13.5VDC ● Smallest power relay ● 1 Form A and 1 FormC arrangements in single and dual relay packages ● For Automotive Applications ● Conform to RoHS,ELV directive


    Original     		PDF T810S-A008C 12VDC 24VDC 10sec) 10-500Hz, 000operations/hr T810S-A008C relay 6vdc

    honeywell hr 20

    Abstract: HC1773 crystal oscillator burn-in data
    Text: Military & Space Products Advance Information DUAL RATE 1773 FIBER OPTIC TRANSCEIVER HC1773 FEATURES • Fabricated with RICMOS IV Bulk CMOS 0.8 µm Process Leff = 0.65 µm • 1Mbps or 20Mbps 1773 format • Total Dose Hardness of ≥3x105 rad(SiO2)


    Original     		PDF HC1773 20Mbps 3x105 HC1773 20Mbartment honeywell hr 20 crystal oscillator burn-in data

    C1383 NPN transistor collector base and emitter

    Abstract: NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383
    Text: Advanced sensor technologies for today’s breakthrough applications Table of Contents . www.optoelectronics.perkinelmer.com Table of Contents PerkinElmer Optoelectronics provides Digital Imaging, Sensor and Lighting technologies to speed the development of breakthrough applications for customers in biomedical,


    Original     		PDF 10-foot C1383 NPN transistor collector base and emitter NPN transistor c1383 C1383 transistor C1383 NPN transistor Light-Dependent Resistor specification c1983 transistor pin configuration of C1383 transistor LHI968 lhi878 c1383

    Untitled

    Abstract: No abstract text available
    Text: CN-H ACNH HIGH LOAD RELAY FOR SMART J/B CN-H RELAYS (ACNH) FEATURES TYPICAL APPLICATIONS • Best space savings in its class. • Large capacity switching despite small size. Can replace micro ISO terminal type relays. • Terminals for PC board pattern


    Original     		PDF ACNH3212 ACNH3112 ASCTB223E 201201-T

    ARE1003

    Abstract: ARE1006 ARE1009 ARE1012 ARE1024 ARE104H ARE10A03 ARE10A06 ARE10A09 ARE10A12
    Text: RE ARE RE RELAYS (ARE) 2.6 GHz SMALL MICROWAVE RELAYS FEATURES 20.2 .795 11.2 .441 • Excellent high frequency characteristics (to 2.6GHz) 8.9 .350 20.2 .795 Type 11.2 .441 9.6 .378 mm inch Impedance 50Ω Impedance 75Ω Frequency V.S.W.R. (Max.) Insertion loss


    Original     		PDF 900MHz ARE1003 ARE1006 ARE1009 ARE1012 ARE1024 ARE104H ARE10A03 ARE10A06 ARE10A09 ARE10A12

    Untitled

    Abstract: No abstract text available
    Text: MARCH 1995 MA31750 DS3748-6.5 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and


    Original     		PDF MA31750 DS3748-6 MIL-STD-1750 MA31750 MIL-STD-1750A MIL-STD1750B. MIL-STD-1750. MAS281.

    Untitled

    Abstract: No abstract text available
    Text: APRIL 1995 MA31753 PRELIMINARY INFORMATION DS3825-3.2 MA31753 DMA CONTROLLER DMAC FOR USE IN AN MA31750 SYSTEM The MA31753 Direct Memory Access Controller (DMAC) is a peripheral interface circuit design primarily for use with the MA31750 microprocessor. Each DMAC provides up to four


    Original     		PDF MA31753 DS3825-3 MA31750 MA31753

    A1512

    Abstract: MA28137 "silicon on sapphire" LAT-3 A15-12 MAS281 microprocessor radiation hard
    Text: MA28137 Marconi Electronic Devices Radiation Hard Program m able D M A C ontroller GENERAL DESCRIPTION FEATURES_ The MA28137 Direct Mem ory Access D M A controller is a p e r i p h e r a l interface circuit designed for MAS281-based


    OCR Scan     		PDF MIL-STD-1750A MAS281 MA28137_ MA28137 MAS281-based Commercial-55 MIL-M-38510 A1512 "silicon on sapphire" LAT-3 A15-12 microprocessor radiation hard

    HX6408

    Abstract: No abstract text available
    Text: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)


    OCR Scan     		PDF HX6408 5x105rad 1x109 1x101 40-Lead D2888 3Q172S HX6408

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)


    OCR Scan     		PDF HLX6256 1x106ra 1x10l4 1x101 4551A72

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)


    OCR Scan     		PDF HX6228 1x106 1x101 1x109 32-Lead

    TDC1010

    Abstract: "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 IDT7210 ma7010 Marconi radiation hard
    Text: MA7010 Marconi Electronic Devices D. + . u. .on ^ a r . ^ A ccum u|ator Signal S lic e T M APPLICATIO NS FEATU RES • Radiation Hard To 1 MRad (Si) • Fast Fourier transform processing • H igh SEU im m unity, Latch-up free • Array processing • Silicon-on-Sapphire technology


    OCR Scan     		PDF IDT7210 TDC1010 MA7010 16x16 MIL-M-38510 "multiplier accumulator" TSX-11 16x16 multiplier tsl-3 ma7010 Marconi radiation hard

    Untitled

    Abstract: No abstract text available
    Text: P jjp i G E C P L E S S E Y DS3587-3.3 MA3690/1/3 1553B BUS CONTROLLER/REMOTE TERMINAL The MA3690/1 chip set has three modes of operation: remote terminal, bus controller, and passive monitor It has a dual bus capability, requires minimum support hardware /


    OCR Scan     		PDF DS3587-3 MA3690/1/3 1553B MA3690/1 48-Pin MA3693 MA3690. Mil-Std-1553B. Mil-Std-883

    Untitled

    Abstract: No abstract text available
    Text: 51 GEC PLESSEY PR ELIM IN A R Y INFO R M ATIO N S E M I C O N D U C T O R S DS3748-4 2 MA31750 HIGH PERFORMANCE MIL-STD-1750 MICROPROCESSOR The GEC Plessey MA31750 is a single-chip microprocessor that implements the full MIL-STD-1750A instruction set architecture, or Option 2 of Draft MIL-STD1750B. The processor executes all mandatory instructions and


    OCR Scan     		PDF DS3748-4 MA31750 MIL-STD-1750 MA31750 MIL-STD-1750A MIL-STD1750B. MIL-STD-1750. MAS281. 32-bit

    Untitled

    Abstract: No abstract text available
    Text: Si GEC P I E S S E Y SE M I CO N D U CT O RS DS3578-2 4 MA2910 RADIATION HARD MICROPROGRAM CONTROLLER The industry standard MA2910 Microprogram Controller forms part of the MA2900 family of devices. Offering a building block approach to microcomputer and controller design, each device in the range is expandable


    OCR Scan     		PDF DS3578-2 MA2910 MA2910 MA2900 Cobalt-60 Mil-Std-883 1x10s 1x101 GS010%

    Untitled

    Abstract: No abstract text available
    Text: w GEC PLESS EY S E M I C O N D U C T O R S DS3587-3.3 MA36901 3 1553B BUS CONTROLLER/REMOTE TERMINAL The MA3690/1 chip set has three modes of operation: remote terminal, bus controller, and passive monitor It has a dual bus capability, requires minimum support hardware /


    OCR Scan     		PDF DS3587-3 MA36901 1553B MA3690/1 48-Pin MA3693 MA3690. Mil-Std-1553B. Mil-Std-883

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)


    OCR Scan     		PDF 1x106ra 1x109 1x101 28-Lead 36-Lead HX6656 MIL-STD-1835, CDIP2-T28

    900-197

    Abstract: SMD transistor Marking 1x smd marking WMM
    Text: Honeywell Aerospace Electronics A d van ce Inform ation 256K x 1 STATIC RAM—SOI HX6156 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 |j,m Process (Lefl = 0.6 |im) • Fast Read/Write Cycle Times < 15 ns (Typical)


    OCR Scan     		PDF 1x106rad 1x101 1x109 HX6156 24-Lead 28-LeadFlat 900-197 SMD transistor Marking 1x smd marking WMM

    Untitled

    Abstract: No abstract text available
    Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)


    OCR Scan     		PDF HX84050 1x106 1x10s 200-Lead