HXSR01608 Search Results

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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: HXSR01608 HXSR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x	Original	PDF	HXSR01608 HXSR01608 150nm
HXSR01608 Abstract: No abstract text available Text: HXSR01608 HXSR01608 2M x 8 STATIC RAM The monolithic, radiation hardened 16M bit Static proprietary design, layout and process hardening Random Access Memory SRAM in a 2M x 8 techniques. There is no internal EDAC implemented. configuration is a high performance 2,097,152 word x 8	Original	PDF	HXSR01608 HXSR01608 150nm
HXSR01608 Abstract: DSASW004792 honeywell memory sram S150 Text: HXSR01608 2M x 8 STATIC RAM 40 LEAD FLAT PACK PINOUT Features n Fabricated on S150 SiliconOn-Insulator SOI CMOS n 150 nm Process (Leff = 110 nm) n Read Cycle Times Typical ≤13 ns Worst case ≤ 20 ns n Write Cycle Times Typical ≤ 9 ns Worst case ≤ 12 ns	Original	PDF	HXSR01608 1X106 1x10-12 2x10-12 1x1014 1x1010 1x1012 XXX-XXXX-000-000 HXSR01608 DSASW004792 honeywell memory sram S150
HXSR01608 Abstract: No abstract text available Text: HXSR01608 2M x 8 STATIC RAM The monolithic 2M x 8 Radiation Hardened Static RAM is a high performance 2,097,152 word x 8-bit static random access memory, fabricated Honeywell’s 150nm silicon-on-insulator with CMOS S150 technology. It is designed for use in low	Original	PDF	HXSR01608 150nm ADS-14155 HXSR01608
HLXSR01608 Abstract: No abstract text available Text: HLXSR01608 HLXSR01608 2M x 8 STATIC RAM 1.5V Core VDD The HLXSR01608 radiation hardened 16Mbit Static proprietary design, layout and process hardening Random Access Memory SRAM is a monolithic techniques. There is no internal EDAC implemented. SRAM fabricated with Honeywell’s 150nm silicon-oninsulator CMOS (S150) technology. The 2M x 8 bit	Original	PDF	HLXSR01608 HLXSR01608 16Mbit 150nm 110mW 40MHz
Untitled Abstract: No abstract text available Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED A Made changes to Table IA, parameters: IDDDOP3 , IDDDOP1, IDDDOPW1, IDDOPW40, IDDDOPW40, IDDOPR1, IDDDOPR1, IDDOPR40, IDDDOPR40, CINA, CINC. ksr 08-12-12 Robert M. Heber B Made changes to Table IA, parameters: Standby current CS disabled	Original	PDF	IDDOPW40, IDDDOPW40, IDDOPR40, IDDDOPR40, MIL-PRF-38535 andLXSR01608-AQH 5962H0820202VXC HLXSR01608-AVH
TSMC 0.18 um MOSfet Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221 Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes	Original	PDF	QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
5962L0053605VYC Abstract: 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA Text: NOT MEASUREMENT SENSITIVE MIL-HDBK-103AJ 19 SEPTEMBER 2011 SUPERSEDING MIL-HDBK-103AH 28 MARCH 2011 DEPARTMENT OF DEFENSE HANDBOOK LIST OF STANDARD MICROCIRCUIT DRAWINGS This handbook is for guidance only. Do not cite this document as a requirement. AMSC N/A	Original	PDF	MIL-HDBK-103AJ MIL-HDBK-103AH MIL-HDBK-103AJ 5962L0053605VYC 5962-9069204QXA ATMEL 302 24C16 UT9Q512E-20YCC MOH0268D UT54ACS164245SEIUCCR Z085810 5962-9762101Q2A UT28F256QLET-45UCC 5962R0250401KXA