1X1011 Search Results

Contextual Info: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)

4N35 application note

Abstract: 4n35 IC 4N35 4N35 applications ic 4n35 data sheet 4n35 datasheet 4N35 circuits 4N35M-V of ic 4n35 4N35 application
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High crrent transfer ratio CTR : MIN. 100% at IF = 10mA, VCE = 10V * Response time ( ton : TYP. 3µs at VCC = 10V, IC = 2mA, RL = 100Ω ) * Input-output isolation voltage 4N35-V series : Viso = 3,550Vrms

E113898

Abstract: LTV-725F LTV-725FM LTV-725FS LTV-725FS-TA1 725f
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High collector-emitter voltage VCEO : 300V * High current transfer ratio ( CTR : MIN. 1,000 at IF=1mA, VCE=2V) * High isolation voltage between input and output ( VISO = 5,000Vrms ) * Low collector dark current

LTV-852S

Abstract: E113898 LTV-852 LTV-852M LTV-852S-TA1 LTV-8D52 LTV-8D52M LTV-8D52S LTV-8D52S-TA1
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High current transfer ratio CTR : MIN. 1000% at IF = 1mA, VCE = 2V * High input-output isolation voltage ( Viso = 5,000Vrms ) * High collector-emitter voltage ( VCEO = 300V ) * Dual-in-line package :

E113898

Abstract: LTV-724F LTV-724FM LTV-724FS R9653630
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES * High isolation voltage between input and output * High input current IF : MAX. 150 mA * Low collector dark current ( ICEO : MAX. 10-7A at VCE = 20V ) * Current transfer ratio ( CTR : 20% ~ 80% at IF = 100mA, VCE = 2V )

PC 814 photocoupler

Abstract: LTV824-V Lite-On LTV814 LTV814-V LTV824STA1-V mark code t4 diode LTV-814 LTV814STA1-V LTV814S-V LTV824M-V
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of LITE-ON Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-814 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV814-V : 1-channel type / LTV824-V : 2-channel type /

PC3Q67QJ000F

Abstract: pc3q67q E64380 EN60747-5-2 PC3H7J00000F VDE0884
Contextual Info: PC3Q67QJ000F Series Mini-flat Half Pitch 4-channel Package, General Purpose Photocoupler PC3Q67QJ000F Series * 1-channel package type is also available. model No. PC3H7J00000F Series • Description ■ Agency approvals/Compliance PC3Q67QJ000F Series contains an IRED optically

LTV-123-V

Abstract: IEC68 LTV-123 LTV-123M LTV-123M-V LTV-123S LTV-123S-TA1-V LTV-123S-V
Contextual Info: LITE-ON TECHNOLOGY CORPORATION Property of Lite-On Only FEATURES 1. This specification shall be applied to photocoupler. Model No. LTV-123 as an option. 2. Applicable Models Business dealing name * Dual-in-line package : LTV-123-V : 1-channel type * Wide lead spacing package :

GEC Plessey Semiconductors cross reference

Abstract: BMA31751 MA17501 MA17502 MA17503 MA31751 MAS281 AD00 TI MIL-STD-1750A E04A
Contextual Info: MAS281 MAS281 MIL-STD-1750A Microprocessor Replaces June 1999 version, DS3563-4.0 The MAS281 Microprocessor is a MIL-STD-1750A Notice 1 , 16-bit Central Processing Unit (CPU). It consists of three CMOS/SOS large-scale integration (LSI) chips: the MA17501

E210

Abstract: E64380 PC3Q410NIP0F
Contextual Info: PC3Q410NIP0F Mini-flat Half Pitch 4-channel Package, High CMR, AC Input, Low Input Current Photocoupler PC3Q410NIP0F ∗ 1-channel package type is also available. model No. PC3H41xNIP0F Series • Description ■ Agency approvals/Compliance PC3Q410NIP0F contains a IRED optically coupled

E64380

Abstract: PC814 PC814X PC814XP PC844X VDE0884
Contextual Info: PC814X Series DIP 4pin AC Input Photocoupler PC814X Series ∗ 4-channel package type is also available. model No. PC844X Series • Description ■ Agency approvals/Compliance PC814X Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in SMT gullwing lead-form option.

pc353

Abstract: D2006 E195 E64380 PC353TJ0000F sharp rohs marking
Contextual Info: PC353TJ0000F PC353TJ0000F Mini-flat Package Includes Base Terminal Connection Photocoupler • Description ■ Agency approvals/Compliance PC353TJ0000F contains an IRED optically coupled to a phototransistor. It is packaged in a 5-pin Mini-flat with Base terminal.

PC8171xNIP

Abstract: PC8171 PC81712NIP PC81716NIP E64380 PC81710NSZ PC81711NSZ PC81712NSZ PC81713NSZ PC81715NSZ
Contextual Info: PC8171xNSZ Series PC8171xNSZ Series DIP 4pin High CMR, Low Input Current Photocoupler • Description ■ Agency approvals/Compliance PC8171xNSZ Series contains an IRED optically coupled to a phototransistor. It is packaged in a 4pin DIP, available in SMT gullwing lead-form option.

PC714V1NSZX

Abstract: E64380 PC714V PC714V0NSZX PC714V0YSZX VDE0884
Contextual Info: PC714VxNSZX Series PC714VxNSZX Series DIP 6 pin General Purpose Photocoupler • Description ■ Agency approvals/Compliance PC714VxNSZX Series contains an IRED optically coupled to a phototransistor. It is packaged in a 6 pin DIP. Input-output isolation voltage rms is 5.0kV.

HX6408

Contextual Info: Honeywell Advance information HX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS V Silicon on Insulator SOI 0.5 |im Process (Lef) = 0.4 pm) • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness >5x105rad(Si02)

Contextual Info: S5E J> m 4 5 5 1 0 7 3 0 0 0 0 0 3 0 4 22 • Honeywell H0N3 - HONEYlüELL/S S E C Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM - SOI HX6828 FEATURES RADIATION OTHER • Fabricated with RICMOS Silicon on Insulator

Contextual Info: MSS1Ô7E DDDlbDE 3TB • Advance Information HLX6408 512K x 8 STATIC RAM—SOI FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.5 (im Process (Leff = 0.4 nm) • Read/Write Cycle Times <20 ns (Typical) <25 ns (-55 to 125°C)

Contextual Info: Honeywell Military & Space Products Preliminary 32K x 8 STATIC RAM— Low Power SOI \ HLX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |u.nn Low Power Process (Leff= 0.55 |am) • Read/Write Cycle Times < 17 ns (Typical)

Contextual Info: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)

ltv827c

Abstract: LTV-817C v 817 y LTV817M LTV817 LTV-827C Lite-on 817 ic 827 LTV847S LTV-847BC
Contextual Info: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * Current transfer ratio CTR : MIN. 50% at IF = 5mA, VCE = 5V January 2010 * High input-output isolation voltage ( Viso = 5,000Vrms ) * Response time ( tr : TYP. 4µs at VCE = 2V, IC = 2mA, RL = 100Ω )

4N35 application

Abstract: 4N35 applications 4N35 CONTROL CIRCUIT 4N35 ic 4n35 Control 4N35
Contextual Info: L IT E - O N T E CH NO L O G Y CO RP O RAT IO N Property of LITE-ON Only FEATURES * High crrent transfer ratio CTR : MIN. 100% at IF = 10mA, VCE = 10V * Response time ( ton : TYP. 3µs at VCC = 10V, IC = 2mA, RL = 100Ω ) * Input-output isolation voltage

MCX RF

Abstract: HCD220
Contextual Info: OCXO Sine Output HCD220 Specifications Product Parameters Frequency range: Optional SMA/B/C/BNC/MCX RF connector s 10.00 PIN 50.00 17.00 15.90 A A Fixing holes M3 tapped. Penetration 5mm max. A Freq adjust (+ve) 2 Fine adjust 3 Freq adjust (-ve) 4 Isolated RF output

MA28140

Abstract: PSS-04-107 DS3839-7 Transponder ID 48 audi Security Transponder DYNEx telemetry command protocol TTC-B-01
Contextual Info: MA28140 MA28140 Packet Telecommand Decoder • Built-in Command Pulse Distribution Unit Core Logic ■ Radiation Hard to 1MRads Si ■ High SEU Immunity, Latch-up Free 12 14 TCC0-5 TCS0-5 TCA0-5 VDD GND PTD CPDUSTN CPDUEN CPDUDIV MAPSTN MAPCK MAPDSR MAPDTR

Contextual Info: Ge Photodiodes Non-cooled Types NIR (Near Infrared) detectors for stable operation at room temperature • High stability over extended time periods Ge photodiodes are planar type photovoltaic devices that provide stable responsivity over extended time periods.