4SS1A72 Search Results

4SS1A72 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
L42n Abstract: HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e Text: H0NEYWE1_I_/SS ELEK-, MIL [13 I>e \| 4551872 DD00212 D • “ H o n eyw e ll r - n - ll'O HM3500, hvmioooo, HE12000 Preliminary ADVANCED DIGITAL BIPOLAR GATE ARRAY FAMILY FAMILY FEATURES • Broad Performance Optimized Family Allows Flexible System Partitioning:	OCR Scan	PDF	DD00212 HM3500, HE12000 ECL10K/KH/100K 148-Pin MIL-M-38510/600 MIL-STD-883C L42n HM3500 adb 630 L43n "alu 4 bit" ECL IC NAND L44N PT06-16-8P-S/transistor 03e
Untitled Abstract: No abstract text available Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 \|xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)	OCR Scan	PDF	HX6228 1x106 1x1014cm 1x109rad 1x101 32-Lead 1x106rad 2x105
HC6264 Abstract: No abstract text available Text: HONEYldELL/SS ELEK-. PII L 03 DËJ 4551Û7E 00 005 2E 1 ^ ¿ -2 3 -/2 Honeywell HC6264 Preliminary Digital Technologies 8K x 8 Radiation-Hardened Static RAM - HC6264 FEATURES RADIATION OTHER • Fabricated with RICMOS Epitaxiall .2 im Process • Access Time 50ns Typical	OCR Scan	PDF	HC6264 1x101 1x109 36-pin HC6264
Untitled Abstract: No abstract text available Text: Honeywell Military & Space Products Advance Information HX9100 64 X 64 CROSSBAR FEATURES • Fabricated with RICMOS“ IV Silicon on Insulator S0l 0.8 jxm Process (Letf = 0.65 nm) • CMOS Compatible I/O Total Dose Hardness of >1x10 rad(Si02) Dose Rate Upset Hardness >1x1011rad(Si)/sec (5V)	OCR Scan	PDF	HX9100 1x101 1x1012rad 1x101/cm2 HX9100 4SS1A72
Untitled Abstract: No abstract text available Text: H OlM EYüJELL/SS ELEK-, M IL 03 D Ë\| 4551Ö72 DDGG3].t □ T -9 2 -//-Û 7 Honeywell Radiation Hardened Bipolar Gate Array Family " Preliminary HM3500R, HVM10000R Family Features • Strategic Radiation Hardness Allows Spaced Based System Operations • Broad Performance Optimized Family Allows Flexible	OCR Scan	PDF	HM3500R, HVM10000R to172 148-Pin 244-Pin M2010, M2023 M1008,
NSL 32 equivalent Abstract: AVW smd AVW smd transistor Text: Honeywell Aerospace Electronics Advance Information 512K x 8 STATIC RAM—SOI HX6408 FEATURES RADIATION OTHER • • Read/Write Cycle Times < 20 ns, 3.3 V , 0 to 80°C < 25 ns, (3.3 V), -55 to 125°C Fabricated with RICMOS V Silicon On Insulator (SOI) 0.35 [im Process (Left = 0.28 \|im)	OCR Scan	PDF	36-Lead HX6408 5x105rad 1x101 NSL 32 equivalent AVW smd AVW smd transistor
Untitled Abstract: No abstract text available Text: Honeywell HTMOS High Temperature Products HIGH TEMPERATURE QUAD OPERATIONAL AMPLIFIER HT1104 FEATURES APPLICATIONS • S pecified O ver -55 to +225°C , O perational to +300°C • • Single or Split Supply O peration • T urbine Engine C ontrol • C om m on-M ode Input V oltage Range	OCR Scan	PDF	HT1104 100pF