Untitled
Abstract: No abstract text available
Text: Honeywell RICMOS GATE ARRAYS HR2000 FAMILY FEATURES • Fabricated on Honeywell’s Radiation Hardened 0.65 M-mLeff RICMOS™ IV Bulk Process • Total Dose Hardness >1x10 rad Si02 • Dose Rate Upset Hardness >1x109rad(Si)/sec • Array Sizes from 10K to 336K Available Gates (Raw)
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OCR Scan
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HR2000
1x109rad
1x101
1x101/cm2
HR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process
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OCR Scan
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HR1060
1x106
1x109rad
1x1012rad
1x109upsets/bit-day
1x1014cnrr2
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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OCR Scan
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HX6228
1x106
1x101
1x109
32-Lead
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PDF
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Untitled
Abstract: No abstract text available
Text: • ft fit * y w n Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC685 : FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 pm Process • Total Dose Hardness through 1x106 rad S i0 2 • Listed on SM D #5962-921 3 Available as
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OCR Scan
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1x106
1x1014cm
HC685
IL-l-38535
1x109
1x101
36-Lead
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION • Fabricated with RICMOS'“ IV Bulk 0.8 urn Process • Total Dose Hardness through 1x10e rad Si02 • Neutron Hardness through 1x1014 cnrr2 OTHER • Read/Write Cycle Times s 40 ns (-55 to 125°C)
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OCR Scan
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1x10e
1x101
36-Lead
28-Lead
HC6856
1E-10
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military Products Advance Information 128K x 8 RADIATION-HARDENED STATIC RAM-SOI HX6228 FEATURES OTHER RADIATION • Fabricated with RICMOS IV-E Silicon on Insulator SOI 0.7 |xm Process • Read/Write Cycle Times <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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OCR Scan
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HX6228
1x106
1x1014cm
1x109rad
1x101
32-Lead
1x106rad
2x105
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PDF
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pepi cr
Abstract: No abstract text available
Text: 55E D • MS51fl?2 OOGOflOa 277 ■ H0N3 Honeywell HONEYWELL/S S E C Military Products «"p q , -23 - o S 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION OTHER • Fabricated using DESC approved QML 1.2|xm RICMOS process • Access Time of 25 ns (typical
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OCR Scan
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MS51fl
1x106
1x101
1x109
PIN23
pepi cr
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PDF
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HC6364
Abstract: No abstract text available
Text: Honeywell 8K X 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES RADIATION OTHER • Fabricated using DESC Approved QML 1.2 urn RICMOS Process • Listed on SMD #5962-38294. Available as M IL-l-38535 QML Class Q and Class V • Total Dose Hardness through
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OCR Scan
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1x10e
1x109
1x101
IL-l-38535
HC6364
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PDF
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KD 2.d smd transistor
Abstract: No abstract text available
Text: Honeywell Military Products 32K x 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Bulk 0.8 |um Process • Total Dose Hardness through 1x106 rad S i02 • Listed on SMD #5962-92153. Available as MIL-l-38535 QML Class Q and Class V
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OCR Scan
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1x106
1x1014cm
1x109
1x101
HC6856
MIL-l-38535
36-Lead
KD 2.d smd transistor
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PDF
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HC6364
Abstract: No abstract text available
Text: b3E D MSS1Ô7E ÜGQD^a T Mb Honeywell IH0N3 8K x 8 RADIATION-HARDENED STATIC RAM HC6364 FEATURES OTHER RADIATION Fabricated using DESC Approved QML 1.2 nm RICMOS1“ Process • Listed on SMD #5962-38294. Available as MIL-l-38535 QML Class Q and Class V Total Dose Hardness through
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OCR Scan
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HC6364
MIL-l-38535
1x10s
1x101
1x109
1x10eto
36-LEAD
28-LEAD
HC6364/1
HC6364
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PDF
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honeywell SOI CMOS
Abstract: No abstract text available
Text: Honeywell Preliminary RICMOS " — LOW POWER SOI GATE ARRAYS HLX2000 FAMILY FEATURES • Optimized for Ultra Low Power Applications • Total Dose Hardness of >1x106 rad S i02 • Fabricated on Honeywell’s Radiation Hardened 0.55 |im RICMOS IV SOI Process
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OCR Scan
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HLX2000
1x106
1x109rad
1x109Errors/Bit-Day
1x101
honeywell SOI CMOS
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PDF
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Untitled
Abstract: No abstract text available
Text: bBE D • MSS1Ô7S O O O O ^ HONEYÜI ELL/ S 24T « S E C Honeywell honb - 64K x 1 RADIATION-HARDENED STATIC RAM HC6464 FEATURES RADIATION • Fabricated using DESC approved QML 1.2nm RICMOS process • Total Dose Hardness through 1x10s rad Si02
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OCR Scan
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HC6464
24-Pin
1x10s
1x101
PIN23
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PDF
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Untitled
Abstract: No abstract text available
Text: b3E » • *4551072 DÜGOTbl 7^b ■H0N3 Honeywell 32K X 8 RADIATION-HARDENED STATIC RAM HC6856 FEATURES RADIATION OTHER ■ Fabricated with RICMOS IV Bulk 0.8 jim Process • Read/Write Cycle Times s 40 ns -55 to 125°C • Total Dose Hardness through 1x10s rad(Si02)
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OCR Scan
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HC6856
1x10s
1x109
36-Lead
28-Lead
HC6856/1
1E-10
S00049
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products HC6856 32K x 8 STATIC RAM FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Bulk 0.8 urn Process Lelf = 0.65 urn • Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V • Total Dose Hardness through 1x106 rad(S i02)
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OCR Scan
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1x106
1x101
1x109
HC6856
MIL-PRF-38535
36-Leximum
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PDF
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