SIHG14N50D Search Results
SIHG14N50D Price and Stock
Vishay Siliconix SIHG14N50D-GE3MOSFET N-CH 500V 14A TO247AC |
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SIHG14N50D-GE3 | Tube | 486 | 1 |
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SIHG14N50D-GE3 | 875 |
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SIHG14N50D-GE3 | 700 |
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Vishay Siliconix SIHG14N50D-E3MOSFET N-CH 500V 14A TO247AC |
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SIHG14N50D-E3 | Tube | 500 |
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Vishay Intertechnologies SIHG14N50D-E3MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHG14N50D-E3) |
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SIHG14N50D-E3 | Reel | 111 Weeks | 500 |
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Vishay Intertechnologies SIHG14N50D-GE3MOSFET N-CHANNEL 500V - Tape and Reel (Alt: SIHG14N50D-GE3) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIHG14N50D-GE3 | Reel | 111 Weeks | 500 |
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SIHG14N50D-GE3 | Bulk | 1 |
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SIHG14N50D-GE3 | 844 |
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SIHG14N50D-GE3 | 675 |
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SIHG14N50D-GE3 | 1 |
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SIHG14N50D-GE3 | 143 Weeks | 25 |
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SIHG14N50D-GE3 | 69 |
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SIHG14N50D Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | |
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SIHG14N50D-E3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-247AC | Original | |||
SIHG14N50D-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 14A TO-247AC | Original |
SIHG14N50D Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiHG14N50D_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter |
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SiHG14N50D AN609, 7252m 6040m 6395m 6003m 7660m 5478m 6766m 5019m | |
SiHG14N50DContextual Info: SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG14N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
forth dimension displaysContextual Info: SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG14N50D O-247AC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 forth dimension displays | |
Contextual Info: SiHG14N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Optimal Design - Low Area Specific On-Resistance - Low Input Capacitance (Ciss) - Reduced Capacitive Switching Losses - High Body Diode Ruggedness |
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SiHG14N50D O-247AC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
IRF740BPBF
Abstract: mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50
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O-220 O-251) O-220FP O-247AC IRF740BPBF mosfets for lcd tv SiHD3N50D IRF730BPBF SiHF8N50D SiHG22N50 | |
si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
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Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 |