SIEG Search Results

Siemens DIODE E 1240

Abstract: AMS 3630 Code "A06" RF Semiconductor SIEMENS BFP420 Transistor MJE 540 HA 12432 SOT343-3 BFP420 application notes BFP420 A06 ff 0401 transistor
Contextual Info: S IE M E N S SIEGET 25 BFP420 NPN Silicon RF Transistor • • • • • • For High Gain Low Noise Amplifiers For Oscillators up to 10 GHz Noise Figure F = 1.05 dB at 1.8 GHz Outstanding Gms = 20 dB at 1.8 GHz Transition Frequency 1j = 25 GHz Gold metalization for high reliability

Marking ANs

Abstract: Transistor C 5198 b 514 transistor BFP450
Contextual Info: SIEMENS SIEGET 25 BFP 450 NPN Silicon RF Transistor • For medium power amplifiers • Compression point P. 1dB = +19 dBm at 1.8 GHz maximum available gain Gma = 14 dB at 1.8 GHz Noise figure F = 1.25 dB at 1.8 GHz • Transition frequency fT = 24 GHz • Gold metalization for high reliability

SIEMENS BFP405

Abstract: marking A06 transistor A06
Contextual Info: SIEMENS SIEGET 25 BFP405 NPN Silicon RF Transistor • • • • • • For Low Current Applications For Oscillators up to 12 GHz Noise Figure F = 1.15 dB at 1.8 GHz Outstanding Gms = 22 dB at 1.8 GHz Transition Frequency fT = 25 GHz Gold metalization for high reliability

tca 335 A

Abstract: tca 765 TCA335A
Contextual Info: 47E ]> • fl23SbOS □□3L b4fl 5 ■ SIEG SIEMENS AKTIENGESELLSCHAF T -1 ^ - O lSingle Operational Amplifier with Darlington Input O TCA 332 TCA 335 Features • • • • • • • • • \ Bipolar 1C High input impedance Wide common-mode range Large supply-voltage range

Contextual Info: tiGE D 023SbD5 0QS0?bti 213 • SIEG SIEMENS SIEMENS AKTIENGESELLSCHAF SAE 81C52 256 x 8-Bit Static CMOS RAM NMOS-Compatible CMOS IC Preliminary Data Features • 256 x 8-bit organization • Standby mode • Compatible with the NMOS and CMOS versions of the microprocessor/microcontroller families

"if amplifier" siemens

Contextual Info: 47E D • flE3SbOS 0034101 3 ■ SIEMENS SIEG SIEMENS AK TI E N G E S l LLSCHAF T^lA'OerOi AM Amplifier for French Sound IF Standard TDA 2148 Bipolar IC Controlled AM IF amplifier with quasi-synchronous demodulator and integral mean value control for French sound IF applications.

82C54-2-P

Contextual Info: 47E » m Ö235b05 0G321flfl S • SIEG SIEMENS AKTIENGESELLSCHAF Av* "T-S W ^ y $ t\ SAB 82C54 Programmable CMOS Interval Timer SAB 82C54 up to 8 MHz SAB 82C54-2 up to 10 MHz • C om patible w ith all Siemens and m ost other microprocessors • Six program m able counter modes

Contextual Info: ô2 3 5 bD 5 00 34 L7 5 ö • SIEG H7E » SIE M EN S A K T I E N G E S E L L S C H A F “T ^ c\ - 0 > '3 - O TBC 2332 TBE 2335 Dual Operational Amplifier with Darlington Input Bipolar 1C Features • • • • • • • • • High input impedance Wide common-mode range

Contextual Info: 47E D SIEMENS • fi23SbOS 0031bl0 <3 ■ SIEG SIEMENS AKTIENGESEL LSCHAF SAB 82C212 Page/Interleave Memory Controller of Siemens PC-AT Chipset Advance Information 157 3.90 M7E » I fl2 3 5 b 0 5 G 0 3 1 b ll SIEMENS AKTIENGESELLSCHAF □ ■ S IE G SAB 82C212

MARKING CODE 13t sot363

Abstract: A03 MMIC mmic a03 sot363 13t mh 7400 marking 8019 7476 7476 PIN DIAGRAM dbl 8466 amplifier siemens
Contextual Info: SIEMENS BGA425 S i-M M IC -A m p lifier in SIEGET 25-Technology Prelim inary Data # # # # # # # M ultifunctional Case. 50 £2 Block LNA/M IX Unconditionally stable Gain |s21f =18.5 dB at 1.8 GHz (appl.1) Gain |s 21|2=22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (V D= 3 V ,lD=9.5m A)

420ECSP

Abstract: BFP420ecsp marking BFP
Contextual Info: SIEGET
25 BFP 420ECSP NPN Silicon RF Transistor Preliminary data
For oscillators up to 10 GHz XY
For high gain low noise amplifiers 4
Noise figure F = 1.15 dB at 1.8 GHz 3 outstanding G ms = 22 dB at 1.8 GHz 1
Transition frequency f T = 25 GHz
Gold metallization for high reliability

N1475

Contextual Info: f l 235 bOS G G 37 b 47 7 • MKT Capacitors SI EMENS A KT I EN 6 E S E L L S C H A F M7E D - - SIEG E3 B 3 2 5 2 0 .B 3 2 52 9 / f 'C f S l 7 ' O S. M e t a liz a d p o ly e s t e r film c a p a c it o r s in a c c o r d a n c e w it h D IN 4 4 1 1 2

BFP405

Abstract: BCR400 rf amplifier siemens 10 ghz aplication note SIEMENS BFP405
Contextual Info: Application Note No. 020 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using SIEMENS SIEGET 25 BFP405. The design emphasis has been on achieving a low noise

siemens rs 1003

Abstract: TRANSISTOR BI 187 Q62702-F1592 VPS05605 TS1440
Contextual Info: SIEGET 25 BFP 405 NPN Silicon RF Transistor 3 • For low current applications 4 • For oscillators up to 12 GHz • Noise figure F = 1.15 dB at 1.8 GHz outstanding Gms = 22 dB at 1.8 GHz • Transition frequency f T = 25 GHz 2 • Gold metalization for high reliability

5B05

Contextual Info: SIEMENS AK TIENGE SEL LSCHAF M7E D fl53SbGS 0D573A2 2 • SIEG SIEM ENS SFH 435 GaAs INFRARED EMITTER DOUBLE EMITTING DIODE * Diametrical Radiation * High Pulse Handling Capability * Good Spectral Matching with Silicon Photodetectors DESCRIPTION The SFH 435 is a two-beam GaAs infrared

transistor Siemens 14 S S 92

Abstract: transistor 115 47e
Contextual Info: I 023SbOS 0020014 3 El SIEG SIEMENS AKTIENGESELLSCHAF 47E » T-21-Z5 BS 107 SIPMOS Small-Signal Transistor Vos /„ = 200 V =0.13 A flbs o n = 26 Q • N channel • Enhancement mode • Package: TO-92') "type Ordering code for version on tape Ordering code

F47E

Contextual Info: S I E M EN S A K T I E N G E S E L L S C H A F r 47E D • Ö S B S bD S 00276^ t> ■ SIEG T-Hl-t'7 LHi 1258 LHi 1258 Pyroelectric-Four-Element-Detector The four-element detector is the sensor ele­ ment designed for all intelligent systems of motion detection devices. It allows the identifi­

transistor Bf 979

Abstract: pnp vhf transistor
Contextual Info: I BSE D • flB35taDS 0GG45Ö4 T ■ SIEG 'T -3 I-/S BF 979 S PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 5C 04584 D - BF 9 7 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 4 1 8 6 7 .

446S

Abstract: 4463a 4463 B OB35
Contextual Info: 47E :i: D • v - öB35bDS 0034704 ü ■ SIEG SIEMENS AKTIENGESELLSCHAF T - ”W - O o - 'S - O Quad Low-Drift PNP Operational Amplifier Advance Information TAF 4463 Bipolar 1C Features • • • • • • • • • Low offset voltage drift High offset long-term stability

marking AUs

Abstract: BFP420F BFP540FESD amplifier marking code a
Contextual Info: BFP540FESD NPN Silicon RF Transistor* • For ESD protected high gain low noise amplifier 3 • Excellent ESD performance 2 4 1 typical value 1000 V HBM • Outstanding Gms = 20 dB Noise Figure F = 0.9 dB • SIEGET  45 - Line • Pb-free (ROHS compliant) package 1)

BFP405

Abstract: A03 RF amplifier A03 amplifier BCR400
Contextual Info: Application Note No. 021 Discrete & RF Semiconductors G. Lohninger A Low-Noise-Amplifier shows good Noise Figure performance at 1.9 GHz using BFP405 This application note describes a low noise amplifier at 1.9GHz using Siemens SIEGET25 BFP405. The design emphasis has been on achieving a low noise

sab82288

Abstract: SAB82289 SAB 80286 16 N 82288
Contextual Info: SIEM ENS 47E D • A23SbDS 0 0 3 i n b 3 ■ SIEG SIEMENS AKTI ENGESELLSCHAF " P c Q '3 5 r ö 5 Bus Controller for SAB 80286 Processors SAB 82288 Preliminary SAB 82288-6 up to 12 MHz SAB 82288 up to 16 MHz • Provides com m ands and control fo r local and system bus

THYRISTOR br 403

Abstract: SIEMENS THYRISTOR thyristor 808 BR403
Contextual Info: i 2SC D • fl23SbOS 0G047bl S Silicon Miniature Thyristor I SIEG BR403 3.5-11 SIEMENS AKTIEN6ESELLSCHAF Si BR 4 0 3 is a silicon planar thyristor in a plastic package silimar to TO 202. The thyristor is especially suitable for use in switching power supplies as well as for universal applications

Contextual Info: SIEMENS AKTIENGESELLSCHAF *47E D S IE M E N S • 6S3SbDS DG27135 1 ■ SIEG ^ ^ LR 5420 LS 5420 LY 5420 LG 5410 red SUPER-RED YELLOW GREEN T13/4 5 mm LED LAMP FEATURES * High Light Output * Water Clear Lens: Green Lightly Tinted Clear Lens: Red, SuperRed, Yellow