VPS05605 Search Results

BAS40-07W

Contextual Info: BAS40-07W 3 Silicon Schottky Diode 4
General-purpose diode for high-speed switching
Circuit protection
Voltage clamping 2
High-level detection and mixing 4 1 3 2 1 VPS05605 EHA07008 Type BAS40-07W Marking Pin Configuration 47s 1=C1 2=C2 3=A2 4=A1 -

marking code g1s

Abstract: Q62702-F1774 SOT 343 MARKING BF
Contextual Info: BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data 3 • For low noise, high gain controlled 4 input stages up to 1GHz • Operating voltage 5V 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code

BAT68-07W

Contextual Info: BAT68-07W Silicon Schottky Diodes 3
For mixer applications in the VHF / UHF range 4
For high-speed switching applications 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BAT68-07W 87s

Silicon N Channel MOSFET Tetrode

Abstract: Q62702-F1772 marking code g1s BF 2000W
Contextual Info: BF 2000W Silicon N Channel MOSFET Tetrode Target data sheet 3 • Short-channel transistor 4 with high S/C quality factor • For low-noise, gain-controlled input stages up to 1 GHz 2 1 Type Marking Ordering Code BF 2000W NDs Q62702-F1772 VPS05605 Pin Configuration

Contextual Info: BAT 64-07W Silicon Schottky Diodes 3 • For low-loss, fast-recovery, meter protection, 4 bias isolation and clamping applications • Integrated diffused guard ring • Low forward voltage 2 1 VPS05605 4 1 3 2 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

marking 81W

Contextual Info: BAR 81W Silicon RF Switching Diode 3
Design for use in shunt configuration 4
High shunt signal isolation
Low shunt insertion loss 2 1 Type Marking BAR 81W BBs Pin Configuration 1=A 2=C 3=A VPS05605 Package 4=C SOT-343 Maximum Ratings Parameter Symbol

ZL 58

Contextual Info: BFP 183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFP 136W NPN Silicon RF Transistor 3
For power amplifier in DECT and PCN systems 4
fT = 5.5GHz
Gold metalization for high reliability 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BFP 136W PAs Pin Configuration

Contextual Info: BF 2030W Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP620

Abstract: BFP620 acs BFP620 applications note GFT45
Contextual Info: BFP620 NPN Silicon Germanium RF Transistor 3 4
High gain low noise RF transistor
Provides outstanding performance for a wide range of wireless applications 2
Ideal for CDMA and WLAN applications
Outstanding noise figure F = 0.7 dB at 1.8 GHz 1 VPS05605

IC 7481 pin configuration

Abstract: IC 7481 ev 2816 01177 ic rom 2816 BFP520 BFP520 application notes k 3683 transistor
Contextual Info: SIEGET
45 BFP520 NPN Silicon RF Transistor 3
For highest gain low noise amplifier 4 at 1.8 GHz and 2 mA / 2 V Outstanding Gms = 23 dB Noise Figure F = 0.95 dB
For oscillators up to 15 GHz 2
Transition frequency fT = 45 GHz 1 VPS05605
Gold metallization for high reliability

BF2030W

Contextual Info: BF2030W Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP183W NPN Silicon RF Transistor 3
For low-noise, high-gain broadband amplifiers at 4 collector currents from 2 mA to 30 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

Contextual Info: BFP460 NPN Silicon RF Transistor* 3 4 • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 2 • Excellent ESD performance typical value > 1500V HBM 1 VPS05605 • High fT of 22 GHz

VPS05605

Abstract: transistor marking 47s bas 44 marking 47s
Contextual Info: BAS 40-07W Silicon Schottky Diode Preliminary data 3 • General-purpose diode for high-speed switching 4 • Circuit protection • Voltage clamping • High-level detecting and mixing • Available with CECC quality assessment 2 1 VPS05605 BAS 40-07W Type

BFP36

Contextual Info: BFP360W NPN Silicon RF Transistor 3 Preliminary data 4
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm 2
Low noise figure: 1.0 dB at 1.8 GHz 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

Contextual Info: BFP182W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

w1901

Contextual Info: BAS 28W Silicon Switching Diode Array 3 • For high-speed switching applications 4 • Electrical insulated diodes 4 2 3 Di1 1 Di2 1 VPS05605 2 EHA07289 Type Marking BAS 28W JTs Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT-343 Maximum Ratings

marking 47s

Contextual Info: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2

Contextual Info: BFP 182W NPN Silicon RF Transistor 3
For low noise, high-gain broadband amplifiers at 4 collector currents from 1 mA to 20 mA
fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type

900 mhz schottky diode

Abstract: marking 55 Sot-343
Contextual Info: BAT 63-07W Silicon Schottky Diode Preliminary data 3 • Low barrier diode for detectors up to GHz 4 frequencies • For high-speed switching applications • Zero bias detector diode 2 1 4 1 3 2 VPS05605 EHA07008 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BF2040W

Contextual Info: BF2040W Silicon N-Channel MOSFET Tetrode 3
For low noise, high gain controlled 4 input stages up to 1GHz
Operating voltage 5V Drain AGC HF Input G2 G1 R G1 2 HF Output + DC 1 VPS05605 GND VGG EHA07461 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP540

Abstract: INFINEON application note
Contextual Info: SIEGET
45 BFP540 NPN Silicon RF Transistor Preliminary data 3
For highest gain low noise amplifier 4 at 1.8 GHz Outstanding Gms = 21 dB Noise Figure F = 0.9 dB
Gold metallization for high reliability 2
SIEGET
45 - Line 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution!

BFP460

Contextual Info: BFP460 NPN Silicon RF Transistor* 3 4 • For low voltage / low current applications • Ideal for VCO modules and low noise amplifiers • Low noise figure: 1.1 dB at 1.8 GHz 2 • Excellent ESD performance • High fT of 22 GHz 1 VPS05605 * Short-term description