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    SI84 Search Results

    SI84 Result Highlights (2)

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    SN65DSI84TPAPRQ1 Texas Instruments Automotive Single Channel MIPI® DSI to Dual-Link LVDS Bridge 64-HTQFP -40 to 105 Visit Texas Instruments Buy
    SN65DSI84ZXHR Texas Instruments MIPI® DSI bridge to Flatlink™ LVDS single-channel DSI to dual-link LVDS bridge 64-NFBGA -40 to 85 Visit Texas Instruments
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    SI84 Price and Stock

    Skyworks Solutions Inc SI8422BB-D-ISR

    DGTL ISO 2500VRMS 2CH GP 8SOIC
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    Skyworks Solutions Inc SI8423AB-D-ISR

    DGTL ISO 2500VRMS 2CH GP 8SOIC
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    Vishay Siliconix SI8406DB-T2-E1

    MOSFET N-CH 20V 16A 6MICRO FOOT
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    Vishay Siliconix SI8489EDB-T2-E1

    MOSFET P-CH 20V 4MICROFOOT
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    Skyworks Solutions Inc SI8440BB-D-IS

    DGTL ISO 2500VRMS 4CH GP 16SOIC
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    SI84 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI84 Delta Electronics SMT Power Inductor Original PDF
    SI8400AA-A-IS Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8400AA-A-ISR Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8400AA-B-IS Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8400AA-B-ISR Silicon Laboratories Digital Isolators, Isolators, IC ISOLATOR BIDIR I2C 8-SOIC Original PDF
    SI8400AB-A-IS Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8400AB-A-ISR Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8400AB-B-IS Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8400AB-B-ISR Silicon Laboratories Digital Isolators, Isolators, IC ISOLATOR BIDIR I2C 8-SOIC Original PDF
    SI-8400L Sanken Electric Separate Excitation Switching Type with Coil Original PDF
    SI-8400L Sanken Electric Separate Excitation Switching Type with Coil Original PDF
    SI-8401 Sanken Electric Separate Excitation Switching Type with Coil Original PDF
    SI8401AA-B-IS Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8401AA-B-ISR Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8401AB-B-IS Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    SI8401AB-B-ISR Silicon Laboratories Digital Isolators, Isolators, IC DGTL ISO 2CH OPEN DRAIN 8SOIC Original PDF
    Si8401DB Vishay Intertechnology P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    Si8401DB SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF
    SI8401DB-T1 Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    ...

    SI84 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    UP78

    Abstract: Aaa SMD MARKING
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING

    Si8483DB

    Abstract: Si8483DB-T2-E1 si8483
    Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) (Max.) ID (A)e 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 VDS (V) - 12 Qg (Typ.) 21 nC APPLICATIONS


    Original     		PDF Si8483DB 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si8483DB-T2-E1 si8483

    Si8422

    Abstract: SI8422BD KobiConn Si8420 si8420bd SI8400AB si8442bb high speed opto isolator digital galvanic isolator SI8442BB-C-IS
    Text: Si84xxISO-EVB UG Si84 XX ISO E VALUATION B OAR D U SER ’ S G UIDE 1. Introduction The Si84xxISO evaluation board allows designers to evaluate Silicon Lab's family of CMOS ultra-low-power isolators. These isolators are CMOS devices employing RF coupler technology to transmit digital information


    Original     		PDF Si84xxISO-EVB Si84xxISO Si841x/2x/3x/4x/5x/6x 634-SI84XXISO-KIT Si84XXISO-KIT Si8422 SI8422BD KobiConn Si8420 si8420bd SI8400AB si8442bb high speed opto isolator digital galvanic isolator SI8442BB-C-IS

    mosfet 2891

    Abstract: No abstract text available
    Text: SPICE Device Model Si8499DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8499DB 18-Jul-08 mosfet 2891

    Untitled

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si8416DB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8416DB AN609, 3908u 7041m 6128m 7225u 3113u 3748u 9593u 19-Dec-11

    si8489

    Abstract: No abstract text available
    Text: Si8489EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY RDS(on) () Max. ID (A)a, e 0.044 at VGS = - 10 V - 5.4 0.054 at VGS = - 4.5 V - 4.9 0.082 at VGS = - 2.5 V - 3.9 VDS (V) - 20 Qg (Typ.) 9.5 nC • Material categorization:


    Original     		PDF Si8489EDB Si8489trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8489

    si8406

    Abstract: No abstract text available
    Text: Si8406DB Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.033 at VGS = 4.5 V 16e 0.037 at VGS = 2.5 V 16e 0.042 at VGS = 1.8 V 15 Qg (Typ.) 7.5 nC MICRO FOOT Bump Side View S • Load Switch • Battery Management


    Original     		PDF Si8406DB Si8406DB-T2-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si8406

    Untitled

    Abstract: No abstract text available
    Text: Si8469DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si8469DB AN609, 9755u 4849u 0393m 1634m 0148u 1583m 6626m 19-Oct-10

    Si8421A

    Abstract: Si8420B Si8421B Si8410B Si8410 Si8420 Si8421 VDE0884 SI8420-B-IS Si8420-B
    Text: Si8410/20/21 S INGLE A N D D UAL -C HANNEL D IGITAL I SOLATORS Features High-speed operation Pin Assignments 2500 VRMS isolation DC – 150 Mbps Narrow Body SOIC Transient Immunity Low propagation delay >25 kV/µs <10 ns DC correct No start-up initialization required


    Original     		PDF Si8410/20/21 Si841x Si842x Si8421A Si8420B Si8421B Si8410B Si8410 Si8420 Si8421 VDE0884 SI8420-B-IS Si8420-B

    Si8420

    Abstract: Si8410 Si8421 VDE0884 SI8410-C-IS
    Text: Si8410/20/21 S INGLE & D UAL - C HANNEL D IGITAL I SOLATORS Features High-speed operation Pin Assignments 2500 VRMS isolation DC – 150 Mbps Narrow Body SOIC Transient Immunity Low propagation delay >25 kV/µs <10 ns DC correct No start-up initialization required


    Original     		PDF Si8410/20/21 Si841x Si842x Si8420 Si8410 Si8421 VDE0884 SI8410-C-IS

    Untitled

    Abstract: No abstract text available
    Text: Si8461DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.100 at VGS = - 4.5 V - 3.7 0.118 at VGS = - 2.5 V - 3.4 0.140 at VGS = - 1.8 V - 3.1 0.205 at VGS = - 1.5 V -2 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si8461DB 2002/95/EC Si8461DB-T2-E1 11-Mar-11

    Si3443DV

    Abstract: Si8401DB Si8401DB-T1-E1
    Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and


    Original     		PDF Si8401DB Si3443DV Si8401DB-T1-E1 11-Mar-11

    Si8400

    Abstract: SOIC127P600X173-8N AN375 SOIC-16 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1
    Text: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features  Independent, bidirectional SDA and SCL isolation channels Open drain outputs with 35 mA sink current  60-year life at rated working voltage  High electromagnetic immunity


    Original     		PDF Si840x 60-year Si8405) SOIC-16 Si8400 SOIC127P600X173-8N AN375 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1

    Untitled

    Abstract: No abstract text available
    Text: Si8435DB Vishay Siliconix New Product P-Channel 1.5-V G-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.041 at VGS = - 4.5 V - 10.0 VDS (V) - 20 0.048 at VGS = - 2.5 V - 9.32 0.058 at VGS = - 1.8 V - 8.48 0.075 at VGS = - 1.5 V - 7.45 Qg (Typ) • TrenchFET Power MOSFET


    Original     		PDF Si8435DB 08-Apr-05

    8205 datasheet

    Abstract: 8205 A 9583 AN609 si84
    Text: Si8465DB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si8465DB AN609, 09-Sep-09 8205 datasheet 8205 A 9583 AN609 si84

    S-82023

    Abstract: Si8445DB
    Text: SPICE Device Model Si8445DB Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si8445DB 18-Jul-08 S-82023

    65420

    Abstract: No abstract text available
    Text: SPICE Device Model Si8461DB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8461DB 18-Jul-08 65420

    A8483

    Abstract: No abstract text available
    Text: Si8483DB Vishay Siliconix P-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 e RDS(on) () (Max.) ID (A) 0.026 at VGS = - 4.5 V - 16 0.035 at VGS = - 2.5 V - 16 0.055 at VGS = - 1.8 V - 13 0.092 at VGS = - 1.5 V - 2.5 Qg (Typ.) 21 nC S • Load Switch for Smart Phones, Tablet PCs, and Mobile


    Original     		PDF Si8483DB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 A8483

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8473EDB Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si8473EDB 18-Jul-08

    Si8441

    Abstract: RF transmitter and receiver Si8440 Si8442 SOIC-16 VDE0805 VDE0884 SI8440-C-IS Si8441C Si8440C
    Text: Si8440/1/2 Q U A D -C H A N N E L D I G I TA L I S O L A T O R Features Pin Assignments High-speed operation: DC – 150 Mbps Low propagation delay: <10 ns Wide Operating Supply Voltage: 2.375–5.5 V Low power: I1 + I2 < 12 mA/channel at 100 Mbps Precise timing:


    Original     		PDF Si8440/1/2 SOIC-16 Si8441 RF transmitter and receiver Si8440 Si8442 VDE0805 VDE0884 SI8440-C-IS Si8441C Si8440C

    Untitled

    Abstract: No abstract text available
    Text: Si8410/20/21 5 kV Si8422/23 (2.5 & 5 kV) L O W - P OWER, S INGLE AND D U A L - C HANNEL D IGITA L I S O L A T O R S Features  High-speed operation DC to 150 Mbps  No start-up initialization required  Wide Operating Supply Voltage: 2.6–5.5 V


    Original     		PDF Si8410/20/21 Si8422/23

    Si8409DB

    Abstract: No abstract text available
    Text: SPICE Device Model Si8409DB Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si8409DB S-52398Rev. 21-Nov-05

    si8473

    Abstract: No abstract text available
    Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 18-Jul-08 si8473