UP78
Abstract: Aaa SMD MARKING
Text: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8401DB
Si3443DV
Si8401DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
UP78
Aaa SMD MARKING
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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SI-8100D
Abstract: si8100 Si8100DB
Text: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si8100DB
2002/95/EC
Si8100DB-T2trademarks
2011/65/EU
2002/95/EC.
2011/65/EU.
12-Mar-12
SI-8100D
si8100
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PDF
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PCB design for 0.2mm pitch csp package
Abstract: led matrix 8x8 mini circuits 0.3mm pitch csp package E30JA Amkor CSP mold compound Soldering guidelines and SMD footprint design led 3mm 8x8 matrix mlf 0.3mm pitch MLF 6x6 guideline pad dimension 1210
Text: Application Notes for Surface Mount Assembly of Amkor’s MicroLeadFrame MLF® Packages December 2003 Page 1 December 2003 Rev. E Contents 1.0 Introduction 3 2.0 Surface Mount Consideration 3 3.0 PCB Design Requirements 4 3.1 4 4 8 8 10 3.2 3.3 Page 2
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Untitled
Abstract: No abstract text available
Text: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si8475EDB
2002/95/EC
8475E
Si8475EDB-T1-E1
25hay
11-Mar-11
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
11-Mar-11
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PDF
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smd marking AAAA
Abstract: No abstract text available
Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging
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Original
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Si8402DB
Si8402DB-T1-E1
11-Mar-11
smd marking AAAA
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PDF
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UP78
Abstract: No abstract text available
Text: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8413DB
Si8413DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
UP78
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8405DB Vishay Siliconix 12-V P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V - 4.0 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging
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Original
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Si8405DB
Si8405DB-T1-E1
11-Mar-11
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PDF
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Type B PICC BPSK SUBCARRIER LOAD MODULATION
Abstract: AT88RF1354 Magnetic card reader writer schematics pcb antenna 13.56 MHz matching RFID loop antenna 13.56 T matching RFID loop antenna 13.56 trench cpr 04 qfn 48 7x7 stencil 125 kHz RFID reader automotive transponder
Text: 1. Features • Compatible with all ISO/IEC 14443 Type B Compliant Cards, Tags, and Transponders • High Performance 13.56 MHz RF Communications Interface ― ISO/IEC 14443-2 Type B Compliant 106 Kbps Signaling ― ISO/IEC 14443-3 Type B Compliant Frame and Data Format
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Original
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AT88RF1354
547A-RFID-10/08
Type B PICC BPSK SUBCARRIER LOAD MODULATION
AT88RF1354
Magnetic card reader writer schematics
pcb antenna 13.56 MHz
matching RFID loop antenna 13.56
T matching RFID loop antenna 13.56
trench cpr 04
qfn 48 7x7 stencil
125 kHz RFID reader
automotive transponder
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78F0511
Abstract: 78F0547GC 78F0547GC DIAGRAM 78F0515A D78F05 78F0547 78F0511A 78f0535a 78K0/KF2 78f0547gc ic
Text: User’s Manual 8 78K0/Kx2 User’s Manual: Hardware 8-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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78K0/Kx2
R01UH0008EJ0401
U18598EJ3V0UD00)
78F0511
78F0547GC
78F0547GC DIAGRAM
78F0515A
D78F05
78F0547
78F0511A
78f0535a
78K0/KF2
78f0547gc ic
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline
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Original
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Si8487DB
Si8409DB
848xx
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
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Original
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Si8902EDB
8902E
8902E
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and
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Original
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Si8413DB
Si8413DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP
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Original
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Si8475EDB
8475E
Si8475EDB-T1-E1
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8405DB Vishay Siliconix 12 V P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V -4 • Material categorization:
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Original
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Si8405DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8409DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.046 at VGS = - 4.5 V - 6.3 0.065 at VGS = - 2.5 V - 5.3 Qg (Typ.) 17 MICRO FOOT Bump Side View 3 Backside View APPLICATIONS 2 D D S G 4 • TrenchFET Power MOSFET
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Original
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Si8409DB
Si8401DB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si8473EDB
2002/95/EC
8473E
Si8473EDB-T1-E1
11-Mar-11
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PDF
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SAC387
Abstract: NXR-1400 tamura solder paste SN63 PB37 alpha PowerPAK 1212-8 stencil ekra e5 SAC387 solder MIL-STD-750 method 1037 UP78 SAC-387
Text: VISHAY SILICONIX Power MOSFETs Application Note 914 "PowerPAK 1212-8", The Proven Automotive Package By Kandarp Pandya INTRODUCTION This application note presents useful information on the PowerPAK 1212-8 to facilitate SQE and design engineers. Vishay introduced the PowerPAK power MOSFET package
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Original
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1990s
AN825
17-May-10
SAC387
NXR-1400
tamura solder paste
SN63 PB37 alpha
PowerPAK 1212-8 stencil
ekra e5
SAC387 solder
MIL-STD-750 method 1037
UP78
SAC-387
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PDF
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QFN-48 LAND PATTERN
Abstract: QFN PACKAGE thermal resistance QFN-48 footprint qfn 48 7x7 footprint ipc-SM-782 thermal analysis on pcb SMD transistor Mo FOOTPRINT PCB qfn 48 7x7 stencil AN5060
Text: Optimum PCB and Stencil Layout for WirelessUSB QFN Package Introduction When designing a system board using the WirelessUSB™ LS/LR QFN chip for wireless product applications, there are several important factors to consider. It is advised to pay critical attention to PCB design and assembly aspects when
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging
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Original
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Si8402DB
Si8402DB-T1-E1
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21
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Original
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Si8902EDB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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Untitled
Abstract: No abstract text available
Text: Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) - 20 RS1S2(on) (Ω) IS1S2 (A) 0.060 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.9 0.105 at VGS = - 1.8 V - 3.4 • • • • TrenchFET Power MOSFET
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Original
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Si8901EDB
8901E
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
PDF
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UMV_3750_R16
Abstract: No abstract text available
Text: CONFIDENTIAL O p e ra tin g T e m p e r a tu r e S to ra g e T e m p e r a tu r e R ange R ange -4 0 t o + 85 d e g r e e s C -5 5 +125 d e g r e e s C to V c c V o lta g e , V d c +5,5 V tu n e +5,0 V o lta g e , V d c DC V o lt a g e a p p lie d t o RF o u t
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OCR Scan
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S85--
UMV-3750-R16
UP-786
33SS6
UMV_3750_R16
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PDF
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