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Vishay Siliconix SI8902EDB-T2-E1 MOSFET 2N-CH 20V 3.9A 6MICROFOOT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI8902EDB-T2-E1	Cut Tape			1	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $2.5	Buy Now
	SI8902EDB-T2-E1	Digi-Reel			1	1 $2.5 10 $2.5 100 $2.5 1000 $2.5 10000 $2.5	Buy Now
	SI8902EDB-T2-E1	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SI8902EDB-T2-E1 Transistor MOSFET Array Dual N-Channel 20V 3.9A 6-Pin Micro Foot T/R - Tape and Reel (Alt: SI8902EDB-T2-E1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI8902EDB-T2-E1	Reel		111 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.87302	Buy Now
Mouser Electronics	SI8902EDB-T2-E1					1 - 10 - 100 - 1000 - 10000 $0.765	Get Quote
Bristol Electronics	SI8902EDB-T2-E1		1,999			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	SI8902EDB-T2-E1		1,599			1 $2.5568 10 $2.5568 100 $2.5568 1000 $0.9588 10000 $0.9588	Buy Now
Vishay Intertechnologies 781-SI8902EDB-T2-E1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	781-SI8902EDB-T2-E1		85			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI8902EDB Datasheets (3)

Part	Manufacturer	Description	Datasheet Type	PDF
SI8902EDB	Vishay Siliconix	Bi-Directional N-Channel 20-V (D-S) MOSFET	Original	PDF
SI8902EDB	Vishay Siliconix	MOSFETs	Original	PDF
SI8902EDB-T2-E1	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 3.9A 6-MFP	Original	PDF

SI8902EDB Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Si8902EDB-T2-E1 Abstract: Si8902EDB t2 955 e S8304 Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304	PDF
SI8407DB Abstract: 8902E Si8902EDB Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E	Original	Si8407DB Si8902EDB 275-mm 8902E 8902E	PDF
8902E Abstract: J-STD-020A Si8902EDB Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A	PDF
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04	PDF
Contextual Info: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02	PDF
Contextual Info: Tape Information Vishay Siliconix MICRO FOOT 2 x 3: 0.8 mm PITCH, 0.275 mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00 0.10 4.00 0.10 + 0.10 Ø 1.50 - 0.00 A 2.00 0.05 B 1.75 0.10 B 5.50 0.05 12.0 + 0.30 - 0.10 SECTION A-A A SECTION B-B Notes 1. 10 sprocket hole pitch cumulative tolerance ± 0.2.	Original	Si8407DB-T2 Si8902EDB-T2 93-5211-X) 92-5210-X) C10-0948-Rev. 11-Oct-10 93-5223-X 11-Oct-10	PDF
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
J-STD-020A Abstract: Si8902EDB Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A	PDF
Si8902EDB Abstract: J-STD-020A Contextual Info: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A	PDF
7404 Abstract: 7404 not 7404 data sheet AN609 Si8902EDB Contextual Info: Si8902EDB_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si8902EDB AN609 10-Aug-07 7404 7404 not 7404 data sheet	PDF
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 8902E 8902E 11-Mar-11	PDF
Si8407DB Abstract: Si8902EDB Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8−mm PITCH, 0.275−mm BUMP HEIGHT Si8407DB−T2, Si8902EDB−T2 4.00"0.10 4.00"0.10 +0.10 O1.50 - 0.00 A 2.00"0.05 0.279"0.02 B BO B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 - 0.10 5_ MAX SECTION A-A A 5_ MAX	Original	275-mm Si8407DB-T2 Si8902EDB-T2 10-sprocket 93-5211-x) 92-5210-x) S-31501--Rev. 14-Jul-03 Si8407DB Si8902EDB	PDF

Si8407DB-T2 Contextual Info: Tape Information Vishay Siliconix MICRO FOOTr 2x3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Si8407DB-T2, Si8902EDB-T2 4.00"0.10 4.00"0.10 +0.10 O1.50−0.00 A 2.00"0.05 B B 1.75 " 0.10 5.50 " 0.05 12.0 +0.30 −0.10 SECTION A-A A SECTION B-B NOTES: 1. 10 sprocket hole pitch cumulative tolerance "0.2 mm.	Original	275-mm Si8407DB-T2 Si8902EDB-T2 92-5210-x) S-40510--Rev. 17-May-04	PDF
J-STD-020A Abstract: Si8902EDB Contextual Info: Si8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 63Sn/37Pb S-21337--Rev. 05-Aug-02 J-STD-020A	PDF
Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET	Original	Si8902EDB 8902E 8902E 18-Jul-08	PDF
G-263 Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-32415--Rev. 24-Nov-03 G-263	PDF
Contextual Info: Si8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET	Original	Si8902EDB 8902E 8902E 63Sn/37Pb S-31863--Rev. 15-Sep-03	PDF
Si8902EDB Abstract: Si8902EDB-T2-E1 Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21	Original	Si8902EDB 11-Mar-11 Si8902EDB-T2-E1	PDF
Si8902EDB Contextual Info: SPICE Device Model Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si8902EDB S-60075Rev. 23-Jan-06	PDF
UP78 Abstract: Aaa SMD MARKING Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and	Original	Si8401DB Si3443DV Si8401DB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 UP78 Aaa SMD MARKING	PDF
Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si8473EDB 2002/95/EC 8473E Si8473EDB-T1-E1 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
SI-8100D Abstract: si8100 Si8100DB Contextual Info: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	Si8100DB 2002/95/EC Si8100DB-T2trademarks 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 SI-8100D si8100	PDF

SI8902EDB Search Results

SI8902EDB Price and Stock

Vishay Siliconix SI8902EDB-T2-E1

Vishay Intertechnologies SI8902EDB-T2-E1

Vishay Intertechnologies 781-SI8902EDB-T2-E1

SI8902EDB Datasheets (3)

SI8902EDB Datasheets Context Search

Si8902EDB-T2-E1

SI8407DB

8902E

J-STD-020A

Si8902EDB

7404

Si8407DB

Si8407DB-T2

J-STD-020A

G-263

Si8902EDB

Si8902EDB

UP78

SI-8100D