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    Vishay Intertechnologies SI7401DN-T1-E3

    7.3 A, 20 V, 0.021 OHM, P-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI7401DN-T1-E3 2,500
    • 1 $1.625
    • 10 $1.625
    • 100 $1.625
    • 1000 $0.7475
    • 10000 $0.6825
    		Buy Now

    Vishay Intertechnologies SI7401DN-T1

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI7401DN-T1 5,098
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    SI7401DN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si7401DN Analog Devices Thermoelectric Cooler Controller Original PDF
    SI7401DN Vishay Siliconix P-Channel 20-V (D-S) MOSFET Original PDF
    SI7401DN-DS Vishay Telefunken DS-Spice Model for Si7401DN Original PDF
    SI7401DN-RC Vishay Siliconix R-C Thermal Model Parameters Original PDF
    Si7401DN SPICE Device Model Vishay P-Channel 20-V (D-S) MOSFET Original PDF

    SI7401DN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74229

    Abstract: Si7411DN Si7401DN Si7401DN-T1 Si7401DN-T1-E3 Si7411DN-T1-E3
    Text: Specification Comparison Vishay Siliconix Si7411DN vs. Si7401DN Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET PowerPAK 1212-8 Identical Part Number Replacements Si7411DN-T1-E3 Replaces Si7401DN-T1-E3 Si7411DN-T1-E3 Replaces Si7401DN-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si7411DN Si7401DN Si7411DN-T1-E3 Si7401DN-T1-E3 Si7401DN-T1 06-Nov-06 74229

    Si7401DN

    Abstract: Si7401DN-T1
    Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package


    Original     		PDF Si7401DN 07-mm Si7401DN-T1 18-Jul-08

    Si7401DN

    Abstract: Si7401DN-T1
    Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 at VGS = – 4.5 V – 11 0.028 at VGS = – 2.5 V – 9.8 0.034 at VGS = – 1.8 V – 8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package


    Original     		PDF Si7401DN 07-mm Si7401DN-T1 08-Apr-05

    S0331

    Abstract: No abstract text available
    Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.021 @ VGS = - 4.5 V - 11 0.028 @ VGS = - 2.5 V - 9.8 0.034 @ VGS = - 1.8 V - 8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKr Package


    Original     		PDF Si7401DN 07-mm Si7401DN-T1 S-03311--Rev. 26-Mar-01 S0331

    Untitled

    Abstract: No abstract text available
    Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package


    Original     		PDF Si7401DN 07-mm Si7401DN-T1 08-Apr-05

    74284

    Abstract: MAR 527 73834 AN609 Si7401DN
    Text: Si7401DN_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7401DN AN609 03-Mar-06 74284 MAR 527 73834

    p-channel mosfet

    Abstract: Si7401DN
    Text: SPICE Device Model Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7401DN 31-May-01 p-channel mosfet

    Untitled

    Abstract: No abstract text available
    Text: Si7401DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (Ω) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 • TrenchFET Power MOSFETS: 1.8-V Rated • New PowerPAK® Package


    Original     		PDF Si7401DN 07-mm Si7401DN-T1 S-51210 27-Jun-05

    s0331

    Abstract: Si7401DN
    Text: Si7401DN New Product Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.021 @ VGS = –4.5 V –11 0.028 @ VGS = –2.5 V –9.8 0.034 @ VGS = –1.8 V –8.9 D TrenchFETr Power MOSFETS: 1.8-V Rated D New PowerPAKt Package


    Original     		PDF Si7401DN 07-mm S-03311--Rev. 26-Mar-01 s0331

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si7613DN 2002/95/EC Si7613DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    s8058

    Abstract: No abstract text available
    Text: Si7120DN Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.019 at VGS = 10 V 10 0.028 at VGS = 4.5 V 8.2 • • • • • Halogen-free Option Available TrenchFET Power MOSFET RoHS COMPLIANT New Low Thermal Resistance


    Original     		PDF Si7120DN Si7120DN-T1-E3 Si7120DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 s8058

    Untitled

    Abstract: No abstract text available
    Text: SQS464EEN www.vishay.com Vishay Siliconix Automotive N-Channel 40 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • Typical ESD Protection 800 V • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd


    Original     		PDF SQS464EEN AEC-Q101 2002/95/EC SQS464EEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SQS404EN-T1-GE3

    Abstract: marking D3 TSOP-6 PPAK1212
    Text: SQS404EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested


    Original     		PDF SQS404EN AEC-Q101 2002/95/EC SQS404EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SQS404EN-T1-GE3 marking D3 TSOP-6 PPAK1212

    MAR 826

    Abstract: No abstract text available
    Text: SQ7415AEN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen free According to IEC61249-2-21 Definition • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC


    Original     		PDF SQ7415AEN IEC61249-2-21 AEC-Q101 2002/95/EC SQ7415AEN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 MAR 826

    Untitled

    Abstract: No abstract text available
    Text: SQS482EN www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • 100 % Rg and UIS Tested 30 RDS(on) () at VGS = 10 V 0.0085 RDS(on) () at VGS = 4.5 V


    Original     		PDF SQS482EN AEC-Q101 SQS482EN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS434DN Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0076 at VGS = 10 V 35 0.0092 at VGS = 4.5 V 35 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF SiS434DN 2002/95/EC SiS434DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SQ7415EN www.vishay.com Vishay Siliconix Automotive P-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • TrenchFET Power MOSFET • PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile • Fast Switching • AEC-Q101 Qualified


    Original     		PDF SQ7415EN AEC-Q101 2002/95/EC SQ7415EN-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    TSOP8

    Abstract: si7401
    Text: Si7820DN Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) () ID (A) 0.240 at VGS = 10 V 2.6 0.250 at VGS = 6 V 2.5 Qg (Typ.) 12.1 PowerPAK 1212-8 APPLICATIONS S 3.30 mm • Primary Side Switch - Telecom Power Supplies


    Original     		PDF Si7820DN 2002/95/EC Si7820DN-T1-E3 Si7820DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 TSOP8 si7401

    si7415dn-t1-ge3

    Abstract: No abstract text available
    Text: Si7415DN Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.065 at VGS = - 10 V - 5.7 0.110 at VGS = - 4.5 V - 4.4 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • Fast Switching


    Original     		PDF Si7415DN Si7415DN-T1-E3 Si7415DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7922DN Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.195 at VGS = 10 V 2.5 0.230 at VGS = 6 V 2.3 • Halogen-free Option Available • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK®


    Original     		PDF Si7922DN Si7922DN-T1-E3 Si7922DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si7615

    Abstract: SI7615ADN SI7615A
    Text: New Product Si7615ADN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0044 at VGS = - 10 V - 35a 0.0060 at VGS = - 4.5 V - 35a 0.0098 at VGS = - 2.5 V a Qg (Typ.) 59 nC - 35 APPLICATIONS PowerPAK 1212-8


    Original     		PDF Si7615ADN Si7615ADN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7615 SI7615A

    SiSA18DN

    Abstract: No abstract text available
    Text: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		PDF SiSA18DN SiSA18DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7107DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.0108 at VGS = - 4.5 V - 15.3 0.015 at VGS = - 2.5 V - 13.0 0.020 at VGS = - 1.8 V - 11.2 PowerPAK 1212-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7107DN 2002/95/EC Si7107DN-T1-E3 Si7107DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)


    Original     		PDF SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12