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    Vishay Siliconix SISA18DN-T1-GE3

    MOSFET N-CH 30V 38.3A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SISA18DN-T1-GE3 Reel 3,000
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    • 10000 $0.20256
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    SISA18DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SISA18DN-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 38.3A 1212-8 Original PDF

    SISA18DN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SiSA18DN

    Contextual Info: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiSA18DN SiSA18DN-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    S1220

    Contextual Info: New Product SiSA18DN Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A)f 0.0075 at VGS = 10 V 38.3 0.0120 at VGS = 4.5 V 30.2 • TrenchFET Gen IV Power MOSFET • 100 % Rg and UIS Tested • Material categorization:


    Original     		SiSA18DN SiSA18DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 S1220 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    POWERPAK SO8

    Abstract: SIS32
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs – Ultra-Low RDS on with Next Generation Technology AND TEC I INNOVAT O L OGY TrenchFET Gen IV N HN POWER MOSFETs O 19 62-2012 New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V


    Original     		SiZ916DT VMN-PT0306-1209 POWERPAK SO8 SIS32 PDF