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    SI3456DD Search Results

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    SI3456DD Price and Stock

    Vishay Siliconix SI3456DDV-T1-GE3

    MOSFET N-CH 30V 6.3A 6TSOP
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    DigiKey SI3456DDV-T1-GE3 Cut Tape 85,192 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.14611
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    SI3456DDV-T1-GE3 Digi-Reel 85,192 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.14611
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    SI3456DDV-T1-GE3 Reel 81,000 3,000
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    Quest Components SI3456DDV-T1-GE3 12,000
    • 1 $0.8
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    New Advantage Corporation SI3456DDV-T1-GE3 90,000 1
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    Vishay Siliconix SI3456DDV-T1-E3

    MOSFET N-CH 30V 6.3A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3456DDV-T1-E3 Digi-Reel 4,940 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.14611
    • 10000 $0.14611
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    SI3456DDV-T1-E3 Cut Tape 4,940 1
    • 1 $0.55
    • 10 $0.341
    • 100 $0.55
    • 1000 $0.14611
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    SI3456DDV-T1-E3 Reel 3,000
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    Vishay Siliconix SI3456DDV-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3456DDV-T1-BE3 Cut Tape 4,397 1
    • 1 $0.52
    • 10 $0.32
    • 100 $0.52
    • 1000 $0.13648
    • 10000 $0.13648
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    SI3456DDV-T1-BE3 Digi-Reel 4,397 1
    • 1 $0.52
    • 10 $0.32
    • 100 $0.52
    • 1000 $0.13648
    • 10000 $0.13648
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    SI3456DDV-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI3456DDV-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI3456DDV-T1-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI3456DDV-T1-BE3 Reel 3,000 17 Weeks 3,000
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    Mouser Electronics SI3456DDV-T1-BE3 54,776
    • 1 $0.41
    • 10 $0.27
    • 100 $0.153
    • 1000 $0.129
    • 10000 $0.096
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    TTI SI3456DDV-T1-BE3 Reel 3,000
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    Vishay Intertechnologies SI3456DDV-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI3456DDV-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI3456DDV-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SI3456DDV-T1-GE3 15,459
    • 1 $0.42
    • 10 $0.28
    • 100 $0.142
    • 1000 $0.088
    • 10000 $0.088
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    Verical SI3456DDV-T1-GE3 57,000 3,000
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    SI3456DDV-T1-GE3 6,000 3,000
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    SI3456DDV-T1-GE3 3,000 3,000
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    Arrow Electronics SI3456DDV-T1-GE3 6,000 17 Weeks 3,000
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    SI3456DDV-T1-GE3 3,000 17 Weeks 3,000
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    Newark SI3456DDV-T1-GE3 Cut Tape 21,223 5
    • 1 $0.308
    • 10 $0.242
    • 100 $0.176
    • 1000 $0.176
    • 10000 $0.176
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    SI3456DDV-T1-GE3 Reel 3,000
    • 1 $0.147
    • 10 $0.147
    • 100 $0.147
    • 1000 $0.147
    • 10000 $0.122
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    TTI SI3456DDV-T1-GE3 Reel 12,000 3,000
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    • 10000 $0.091
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    TME SI3456DDV-T1-GE3 1
    • 1 $0.369
    • 10 $0.244
    • 100 $0.14
    • 1000 $0.128
    • 10000 $0.128
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    Avnet Asia SI3456DDV-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SI3456DDV-T1-GE3 18 Weeks 3,000
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    SI3456DD Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3456DDV-T1-BE3 Vishay Siliconix N-CHANNEL 30-V (D-S) MOSFET Original PDF
    SI3456DDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.3A 6TSOP Original PDF
    SI3456DDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.3A 6-TSOP Original PDF

    SI3456DD Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si3456DDV

    Abstract: a1615
    Text: SPICE Device Model Si3456DDV Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si3456DDV 18-Jul-08 a1615

    Si3456DDV

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 Qg (Typ.) APPLICATIONS • Load Switch 2.8 nC • HDD


    Original
    PDF Si3456DDV Si3456DDV-T1-E3 18-Jul-08

    Si3456DDV

    Abstract: SI3456CDV Si3456CDV-T1-E3 Si3456CDV-T1-GE3 SI3456DDV-T1-GE3 si3456dd
    Text: Specification Comparison Vishay Siliconix Si3456DDV vs. Si3456CDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456DDV-T1-GE3 replaces Si3456CDV-T1-GE3 Si3456DDV-T1-E3 or Si3456DDV-T1-GE3 replaces Si3456CDV-T1-E3


    Original
    PDF Si3456DDV Si3456CDV Si3456DDV-T1-GE3 Si3456CDV-T1-GE3 Si3456DDV-T1-E3 Si3456CDV-T1-E3 20-Jul-09 si3456dd

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    4511 mosfet

    Abstract: 03-FEB-09 4511 AN609 Si3456DDV
    Text: Si3456DDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original
    PDF Si3456DDV AN609, 03-Feb-09 4511 mosfet 03-FEB-09 4511 AN609

    Si3456DDV

    Abstract: si3456dd
    Text: New Product Si3456DDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.040 at VGS = 10 V 6.3 0.050 at VGS = 4.5 V 5.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    PDF Si3456DDV 2002/95/EC Si3456DDV-T1-E3 Si3456DDV-T1-GE3 18-Jul-08 si3456dd

    Untitled

    Abstract: No abstract text available
    Text: Si3456DDV_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter


    Original
    PDF Si3456DDV AN609, CO004 21-Jun-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3456DDV www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    PDF Si3456DDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    NPCE781BA0DX

    Abstract: nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U
    Text: 5 4 3 2 1 D D Berry DG15 Discrete/UMA Schematics Document Arrandale Intel PCH C C 2010-02-03 REV : A00 DY :None Installed UMA:UMA platform installed PARK:DIS PARK platform installed M96:DIS M96 platform installed VRAM_1G:VRAM 128M*16 installed Colay :Manual modify BOM


    Original
    PDF 512MB 64Mx16b C995R GPIO45 650ms NPCE781BA0DX nuvoton NPCE781BA0DX 92HD79B1a5 92HD79B1 NPCE781 TPS51611 NPCE781B UP7534BRA8 npce781ba G7922R61U

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original
    PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477