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    SI3456CDV Price and Stock

    Vishay Siliconix SI3456CDV-T1-E3

    MOSFET N-CH 30V 7.7A 6TSOP
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    DigiKey SI3456CDV-T1-E3 Reel 3,000
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    Vishay Siliconix SI3456CDV-T1-GE3

    MOSFET N-CH 30V 7.7A 6TSOP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI3456CDV-T1-GE3 Reel 3,000
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    Vishay Intertechnologies SI3456CDV-T1-E3

    Electronic Component
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    ComSIT USA SI3456CDV-T1-E3 2,011
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    SI3456CDV Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3456CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP Original PDF
    SI3456CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 7.7A 6TSOP Original PDF

    SI3456CDV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    S-80735

    Abstract: Si3456CDV
    Text: SPICE Device Model Si3456CDV Vishay Siliconix N-Channel 30V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3456CDV 18-Jul-08 S-80735

    Untitled

    Abstract: No abstract text available
    Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si3456DDV

    Abstract: SI3456CDV Si3456CDV-T1-E3 Si3456CDV-T1-GE3 SI3456DDV-T1-GE3 si3456dd
    Text: Specification Comparison Vishay Siliconix Si3456DDV vs. Si3456CDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456DDV-T1-GE3 replaces Si3456CDV-T1-GE3 Si3456DDV-T1-E3 or Si3456DDV-T1-GE3 replaces Si3456CDV-T1-E3


    Original     		PDF Si3456DDV Si3456CDV Si3456DDV-T1-GE3 Si3456CDV-T1-GE3 Si3456DDV-T1-E3 Si3456CDV-T1-E3 20-Jul-09 si3456dd

    68341

    Abstract: that 2159 AN609 Si3456CDV 32-1014
    Text: Si3456CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3456CDV AN609 03-Jan-08 68341 that 2159 32-1014

    Si3456CDV

    Abstract: Si3456CDV-T1-E3 Si3456CDV-T1-GE3
    Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 18-Jul-08

    SI3456C

    Abstract: No abstract text available
    Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI3456C

    Si3456CDV

    Abstract: Si3456CDV-T1-E3
    Text: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch


    Original     		PDF Si3456CDV Si3456CDV-T1-E3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3456CDV 2002/95/EC Si3456CDV-T1-E3 Si3456CDV-T1-GE3 11-Mar-11

    SI3456CDV

    Abstract: No abstract text available
    Text: New Product Si3456CDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)d 0.034 at VGS = 10 V 7.8 0.052 at VGS = 4.5 V 6.3 VDS (V) 30 • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 4 nC RoHS COMPLIANT • Load Switch


    Original     		PDF Si3456CDV Si3456CDV-T1-E3 08-Apr-05

    Si3456BDV

    Abstract: Si3456CDV Si3456BDV-T1-E3 Si3456CDV-T1-E3
    Text: Specification Comparison Vishay Siliconix Si3456CDV vs. Si3456BDV Description: Package: Pin Out: N-Channel, 30-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3456CDV-T1-E3 replaces Si3456BDV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3456CDV Si3456BDV Si3456CDV-T1-E3 Si3456BDV-T1-E3 29-Feb-08

    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


    Original     		PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250