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    SI2366 Search Results

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    SI2366 Price and Stock

    Vishay Siliconix SI2366DS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET
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    DigiKey SI2366DS-T1-BE3 Digi-Reel 7,834 1
    • 1 $0.71
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    SI2366DS-T1-BE3 Cut Tape 7,834 1
    • 1 $0.71
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    SI2366DS-T1-BE3 Reel 6,000 3,000
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    Vishay Siliconix SI2366DS-T1-GE3

    MOSFET N-CH 30V 5.8A SOT23-3
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    DigiKey SI2366DS-T1-GE3 Cut Tape 6,017 1
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    SI2366DS-T1-GE3 Digi-Reel 6,017 1
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    SI2366DS-T1-GE3 Reel 6,000 3,000
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    RS SI2366DS-T1-GE3 Bulk 3,000
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    MOSLEADER SI2366DS-T1-GE3-ML

    N 30V 5.8A SOT-23
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    DigiKey SI2366DS-T1-GE3-ML Reel 200
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    Vishay Intertechnologies SI2366DS-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2366DS-T1-GE3)
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    Avnet Americas SI2366DS-T1-GE3 Reel 8 Weeks 3,000
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    Mouser Electronics SI2366DS-T1-GE3 23,515
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    Verical SI2366DS-T1-GE3 3,000 3,000
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    Arrow Electronics SI2366DS-T1-GE3 3,000 8 Weeks 3,000
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    Newark SI2366DS-T1-GE3 Reel 3,000
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    TTI SI2366DS-T1-GE3 Reel 3,000
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    TME SI2366DS-T1-GE3 1
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    EBV Elektronik SI2366DS-T1-GE3 18 Weeks 3,000
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    Vishay Intertechnologies SI2366DS-T1-BE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2366DS-T1-BE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI2366DS-T1-BE3 Reel 17 Weeks 3,000
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    Mouser Electronics SI2366DS-T1-BE3 59,416
    • 1 $0.51
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    Newark SI2366DS-T1-BE3 Bulk 3,000
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    TTI SI2366DS-T1-BE3 Reel 6,000 3,000
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    SI2366 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2366DS-T1-BE3 Vishay Siliconix N-CHANNEL 30-V (D-S) MOSFET Original PDF
    SI2366DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 5.8A SOT-23 Original PDF

    SI2366 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    si2366

    Abstract: No abstract text available
    Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2366DS AN609, J2523 4374u 1469m 9180m 0805u 5327u 7530m 0215u si2366

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SI2366DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2366DS Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2366DS 11-Mar-11

    Marking code H6

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 11-Mar-11 Marking code H6

    Marking code H6

    Abstract: si2366 si23
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Marking code H6 si2366 si23

    Untitled

    Abstract: No abstract text available
    Text: New Product Si2366DS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.036 at VGS = 10 V 5.8 0.042 at VGS = 4.5 V 5.4 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2366DS 2002/95/EC OT-23 Si2366DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2366DS www.vishay.com Vishay Siliconix N-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2366DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836