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Vishay Siliconix SI2305CDS-T1-GE3 MOSFET P-CH 8V 5.8A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2305CDS-T1-GE3	Cut Tape	47,584		1	1 $0.58 10 $0.358 100 $0.58 1000 $0.15429 10000 $0.15429	Buy Now
	SI2305CDS-T1-GE3	Digi-Reel	47,584		1	1 $0.58 10 $0.358 100 $0.58 1000 $0.15429 10000 $0.15429	Buy Now
	SI2305CDS-T1-GE3	Reel	45,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.13124	Buy Now
RS	SI2305CDS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.283	Get Quote
Vishay Siliconix SI2333CDS-T1-E3 MOSFET P-CH 12V 7.1A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2333CDS-T1-E3	Reel	44,860		3,000	1 - 10 - 100 - 1000 - 10000 $0.21343	Buy Now
RS	SI2333CDS-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.58	Get Quote
New Advantage Corporation	SI2333CDS-T1-E3		24,000		1	1 - 10 - 100 - 1000 - 10000 $0.1986	Buy Now
Vishay Siliconix SI2300DS-T1-GE3 MOSFET N-CH 30V 3.6A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2300DS-T1-GE3	Reel	21,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.15228	Buy Now
RS	SI2300DS-T1-GE3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.34	Get Quote
Vishay Siliconix SI2333CDS-T1-GE3 MOSFET P-CH 12V 7.1A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2333CDS-T1-GE3	Reel	15,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.21343	Buy Now
New Advantage Corporation	SI2333CDS-T1-GE3		51,000		1	1 - 10 - 100 - 1000 - 10000 $0.1725	Buy Now
Vishay Siliconix SI2323DDS-T1-BE3 P-CHANNEL 20-V (D-S) MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2323DDS-T1-BE3	Cut Tape	9,490		1	1 $0.85 10 $0.528 100 $0.85 1000 $0.23578 10000 $0.23578	Buy Now
	SI2323DDS-T1-BE3	Digi-Reel	9,490		1	1 $0.85 10 $0.528 100 $0.85 1000 $0.23578 10000 $0.23578	Buy Now
	SI2323DDS-T1-BE3	Reel	9,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.20295	Buy Now

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SI23 Datasheets (382)

Part	Manufacturer	Description	Datasheet Type	PDF
SI2300	Kexin	N-Channel Enhancement Mode MOSFET	Original	PDF
SI2300	TY Semiconductor	TY Equivalent - N-Channel Enhancement Mode MOSFET - SOT-23	Original	PDF
SI2300A	UMW	20V 6A 25MR@4.5V,6A 1V@50A N CHA	Original	PDF
SI2300DS-T1-BE3	Vishay Siliconix	N-CHANNEL 30-V (D-S) MOSFET	Original	PDF
SI2300DS-T1-GE3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23	Original	PDF
SI2300-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE	Original	PDF
SI2301-3A	Unknown	MOSFET SOT-23 P Channel 20V	Original	PDF
SI2301A	UMW	20V 2.8A 400MW 142MR@2.5V,2A 1V@	Original	PDF
Si2301ADS	Vishay Intertechnology	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301ADS	Vishay Telefunken	V(ds): -20V V(gs): ±8V P-channel 2.5-V (G-S) MOSFET	Original	PDF
Si2301ADS-E3	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236	Original	PDF
Si2301ADS-T1	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL	Original	PDF
Si2301ADS-T1-E3	Vishay	Transistor Mosfet P-CH 20V 1.75A 3TO-236 REEL	Original	PDF
SI2301AHE3-TP	Micro Commercial	Interface	Original	PDF

SI2301A-TP	Micro Commercial	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - P-CHANNEL,MOSFETS,SOT-23 PACKAGE	Original	PDF
Si2301BD	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301BDS	Vishay Siliconix	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
Si2301BDS-E3	Vishay	Transistor Mosfet P-CH 20V 2.2A 3TO-236	Original	PDF
Si2301BDS SPICE Device Model	Vishay	P-Channel 2.5-V (G-S) MOSFET	Original	PDF
SI2301BDST1	Vishay	MOSFET,P CHAN,2.5V,SOT23	Original	PDF

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SI23 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MOSFET SOT-23 marking code M2 Abstract: No abstract text available Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si2312BDS 2002/95/EC O-236 OT-23) Si2312BDS-T1-E3 Si2312BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC MOSFET SOT-23 marking code M2
si2366 Abstract: No abstract text available Text: Si2366DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si2366DS AN609, J2523 4374u 1469m 9180m 0805u 5327u 7530m 0215u si2366
marking L4 mosfet sot23 Abstract: SI2304 Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested	Original	PDF	Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC marking L4 mosfet sot23 SI2304
si2301 Abstract: No abstract text available Text: Si2301BDS Vishay Siliconix P-Channel 2.5 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si2301BDS 2002/95/EC O-236 OT-23) Si2301 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC
Si2303CDS Abstract: No abstract text available Text: Si2303CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.190 at VGS = - 10 V - 2.7 0.330 at VGS = - 4.5 V - 2.1 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2303CDS O-236 OT-23) Si2303CDS-T1-E3 Si2303CDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
SI2333DS-T1-E3 Abstract: No abstract text available Text: Si2333DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.032 at VGS = - 4.5 V - 5.3 0.042 at VGS = - 2.5 V - 4.6 0.059 at VGS = - 1.8 V - 3.9 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET	Original	PDF	Si2333DS O-236 OT-23) Si2333DS-T1-E3 Si2333DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.
Si2315BDS-T1-E3 Abstract: No abstract text available Text: Si2315BDS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • Halogen-free Option Available • TrenchFET Power MOSFETs: 1.8 V Rated RDS(on) (Ω) ID (A) 0.050 at VGS = - 4.5 V - 3.85 0.065 at VGS = - 2.5 V - 3.4 RoHS*	Original	PDF	Si2315BDS O-236 OT-23) Si2315BDS-T1 Si2315BDS-T1-E3 Si2315BDS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC
TSS 6672-1 Abstract: No abstract text available Text: Si2319CDS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	PDF	Si2319CDS AN609, 26-May-10 TSS 6672-1
si2301cds-t1-ge3 Abstract: No abstract text available Text: Specification Comparison www.vishay.com Vishay Siliconix Si2301CDS vs. Si2301BDS Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET SOT-23 Identical Part Number Replacements: Si2301CDS-T1-GE3 replaces Si2301BDS-T1-GE3 Si2301CDS-T1-E3 replaces Si2301BDS-T1-E3	Original	PDF	Si2301CDS Si2301BDS OT-23 Si2301CDS-T1-GE3 Si2301BDS-T1-GE3 Si2301CDS-T1-E3 Si2301BDS-T1-E3 Si2301BDS-T1
Si2329DS Abstract: si2329 si23 Text: SPICE Device Model Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	PDF	Si2329DS 11-Mar-11 si2329 si23
3V30V Abstract: 51K3 e515 Text: B C E7 R6 R5 Opt. R7 TGEN 10 CTRL 5 VREF C3 0.01uF 2 GND E10 C4 0.01uF 14 15 Q1 Si2319DS 2 3 LED+ R8 392k OUT PVIN R13 5.1k R9 Opt. R3 Opt. LED+ R15 Opt. 12 LED+ 330mA E2 ISN ISP 2 SW 1 SW PVIN OUT FB 4 Opt. 3 2 13 8 R10 Opt. PWM SYNC CTRL R11 Opt. 16 OUT	Original	PDF	V-40V 10MQ060N V-30V Si2319DS LT3518EUF 330mA 3V30V 51K3 e515
si2329 Abstract: SI2329DS Text: Si2329DS Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.030 at VGS = - 4.5 V - 6e 0.036 at VGS = - 2.5 V - 6e 0.048 at VGS = - 1.8 V - 5.9 0.068 at VGS = - 1.5 V -5 0.120 at VGS = - 1.2 V - 3.7 VDS (V) -8	Original	PDF	Si2329DS 2002/95/EC O-236 OT-23) Si2329DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. si2329
si2300 sot-23 Abstract: No abstract text available Text: Product specification KI2300 SI2300 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features VDS=20V,RDS(ON)=75m @VGS=1.8V,ID=1.0A 1 0.55 @VGS=2.5V,ID=4.0A +0.1 1.3-0.1 VDS=20V,RDS(ON)=60m +0.1 2.4-0.1 @VGS=4.5V,ID=5.0A 0.4 3 VDS=20V,RDS(ON)=40m 2 +0.1 0.95-0.1	Original	PDF	KI2300 SI2300) OT-23 si2300 sot-23
SI2301 Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SI2301 Features • • • • • • • • P-Channel Enhancement Mode -20V,-2.8A, RDS ON =120mΩ@VGS=-4.5V	Original	PDF	SI2301 OT-23 OT-23 SI2301

Si2304BDS Abstract: Si2304BDS-T1-E3 Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View	Original	PDF	Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11
Si2333CDS Abstract: Si2333CDS-T1-GE3 Si2333C Text: Si2333CDS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.035 at VGS = - 4.5 V - 5.1 0.045 at VGS = - 2.5 V - 4.5 0.059 at VGS = - 1.8 V - 3.9 VDS (V) - 12 • Halogen-free According to IEC 61249-2-21 Definition	Original	PDF	Si2333CDS 2002/95/EC O-236 OT-23) Si2333CDS-T1-E3 Si2333CDS-T1-GE3 11-Mar-11 Si2333C
Si2309DS Abstract: Si2309DS-T1 Text: Si2309DS Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) (Ω) ID (A) 0.340 at VGS = - 10 V - 1.25 0.550 at VGS = - 4.5 V -1 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET TO-236	Original	PDF	Si2309DS O-236 OT-23) Si2309DS-T1 Si2309DS-T1-E3 Si2309DS-T1-GE3 11-Mar-11
Si2302ADS Abstract: Si2302ADS-T1-E3 Si2302ADS-T1-GE3 2A MARKING CODE Text: Si2302ADS Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.060 at VGS = 4.5 V 2.4 0.115 at VGS = 2.5 V 2.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC	Original	PDF	Si2302ADS 2002/95/EC O-236 OT-23) Si2302ADS-T1-E3 Si2302ADS-T1-GE3 11-Mar-11 2A MARKING CODE
Si2301 Abstract: Si2301BDS Si2301BDS-T1 Si2301BDS-T1-E3 Text: Si2301BDS Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.100 at VGS = - 4.5 V - 2.4 0.150 at VGS = - 2.5 V - 2.0 VDS (V) - 20 • Halogen-free Option Available Pb-free Available RoHS* COMPLIANT TO-236 (SOT-23)	Original	PDF	Si2301BDS O-236 OT-23) Si2301 Si2301BDS-T1 Si2301BDS-T1-E3 Si2301BDS-T1-GE3 08-Apr-05
Si2307CDS Abstract: No abstract text available Text: New Product Si2307CDS Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, b 0.088 at VGS = - 10 V - 2.7 0.138 at VGS = - 4.5 V - 2.2 VDS (V) - 30 Qg (Typ.) APPLICATIONS COMPLIANT • Load Switch for Portable Devices	Original	PDF	Si2307CDS O-236 OT-23) Si2307CDS-T1-E3 Si2307CDS-T1-GE3 11-Mar-11
Untitled Abstract: No abstract text available Text: Si2372DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) MAX. ID (A) d 0.033 at VGS = 10 V 5.3 0.038 at VGS = 6 V 4.9 0.043 at VGS = 4.5 V 4.6 • TrenchFET power MOSFET Qg (TYP.) • 100 % Rg tested	Original	PDF	Si2372DS OT-23 O-236) Si2372DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: New Product Si2377EDS Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.061 at VGS = - 4.5 V - 4.4 0.080 at VGS = - 2.5 V - 3.8 0.110 at VGS = - 1.8 V - 3.3 0.165 at VGS = - 1.5 V - 0.5 Qg (Typ.) 7.6 nC	Original	PDF	Si2377EDS 2002/95/EC O-236 OT-23) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
Untitled Abstract: No abstract text available Text: Si2302DDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) Max. ID (A) 0.057 at VGS = 4.5 V 2.9 0.075 at VGS = 2.5 V 2.6 Qg (Typ.) 3.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	PDF	Si2302DDS 2002/95/EC O-236 OT-23) Si2302DDS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A
SI2304DS marking code SOT-23 Abstract: A4* marking code A4 MARKING CODE Text: SÌ2304DS VISHAY Siliconix ▼ N-Channel 30-V D-S MOSFET PRODUCT SUM M ARY V ds (V) r DS(ON) (-2) I d (A) 0.117 @ VGS = 10 V 2.5 0.190 @ VGS = 4.5 V 2.0 30 TO-236 (SOT-23) Top View Si2304DS (A4)* *Marking Code A B S O L U T E M A X IM U M R A T IN G S (TA = 2 5 ° C U N L E S S O T H E R W IS E N O T E D )	OCR Scan	PDF	2304DS O-236 OT-23) Si2304DS S-56945-- 23-Nov-98 SI2304DS marking code SOT-23 A4* marking code A4 MARKING CODE

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Vishay Siliconix SI2305CDS-T1-GE3

Vishay Siliconix SI2333CDS-T1-E3

Vishay Siliconix SI2300DS-T1-GE3

Vishay Siliconix SI2333CDS-T1-GE3

Vishay Siliconix SI2323DDS-T1-BE3

SI23 Datasheets (382)

SI23 Datasheets Context Search

MOSFET SOT-23 marking code M2

si2366

marking L4 mosfet sot23

si2301

Si2303CDS

SI2333DS-T1-E3

Si2315BDS-T1-E3

TSS 6672-1

si2301cds-t1-ge3

Si2329DS

3V30V

si2329

si2300 sot-23

SI2301

Si2304BDS

Si2333CDS

Si2309DS

Si2302ADS

Si2301

Si2307CDS

Untitled

Untitled

Untitled

SI2304DS marking code SOT-23