shockley diode
Abstract: No abstract text available
Text: 420 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)160 V(BO) Max. (V)240 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)120 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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shockley diode
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shockley diode
Abstract: No abstract text available
Text: 1N3490 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)12 I(H) Max. (A) Holding Current45m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m
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1N3490
Current45m
StyleDO-204AA
NumberTY00200003
shockley diode
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Untitled
Abstract: No abstract text available
Text: 1N3836 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)41 V(BO) Max. (V)49 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)27 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3836
Current15m
StyleDO-204AA
NumberTY00200003
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shockley diode
Abstract: No abstract text available
Text: 480 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)640 V(BO) Max. (V)960 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)480 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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shockley diode
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P-Channel Depletion Mode FET
Abstract: p channel depletion mosfet an101 siliconix N-Channel JFET FETs JFETs Junction FETs Junction FETs JFETs list of n channel fet n channel depletion MOSFET Depletion MOSFET depletion
Text: AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldĆeffect transistor FET has been known since J. E. Lilienfeld's patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic
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AN101
P-Channel Depletion Mode FET
p channel depletion mosfet
an101 siliconix
N-Channel JFET FETs
JFETs Junction FETs
Junction FETs JFETs
list of n channel fet
n channel depletion MOSFET
Depletion MOSFET
depletion
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Untitled
Abstract: No abstract text available
Text: UF100C Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)110 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100C
Current50m
StyleTO-204AAvar
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: UF100B Thyristors Four-Layer Shockley Diode V(BO) Min. (V)85 V(BO) Max. (V)115 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)115 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100B
Current50m
StyleTO-204AAvar
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 1N3837 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3837
Current15m
StyleDO-204AA
NumberTY00200003
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shockley diode
Abstract: No abstract text available
Text: 470 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)560 V(BO) Max. (V)840 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)420 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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Current500u
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shockley diode
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Untitled
Abstract: No abstract text available
Text: 450 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)400 V(BO) Max. (V)600 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)300 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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shockley diode application
Abstract: shockley diode shockley diode applications 1N3835 2sc 945 p transistor diode shockley 1N3837 shockley diode high voltage and high current shockley clevite
Text: CATALOG OF SHOCKLEY 4-LAYER DIODES L L E V IT E SHOCKLEY 10O1 RAGE M IL L TRANSISTOR ROAD • PA LO A L T O . C A L IF . General Information and Introduction to the Shockley 4 -L a y e r Diode The Shockley 4-layer diode is a two terminal, silicon semiconductor switch. It has
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8000/nominal
shockley diode application
shockley diode
shockley diode applications
1N3835
2sc 945 p transistor
diode shockley
1N3837
shockley diode high voltage and high current
shockley
clevite
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Untitled
Abstract: No abstract text available
Text: 1N3846 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3846
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 1N3840 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)21 V(BO) Max. (V)29 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3840
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 1N3936 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)16 V(BO) Max. (V)24 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)15 I(H) Max. (A) Holding Current11m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)70m
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1N3936
Current11m
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NumberTY00200003
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shockley diode
Abstract: No abstract text available
Text: T40R06220300 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)650 V(BO) Max. (V)0.8k I(S) Max. (A)5.0m I(TRM) Max. (A)35² @ t(w) (s) (Test Condition) I(TSM) Max. (A)300¥ V(R) Max. (V)600 I(H) Max. (A) Holding Current100m V(TM) Max. (V)40 @I(T) (A) (Test Condition)1.0k
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T40R06220300
Current100m
NumberTY00200003
shockley diode
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shockley diode
Abstract: No abstract text available
Text: UF100A Thyristors Four-Layer Shockley Diode V(BO) Min. (V)80 V(BO) Max. (V)120 I(S) Max. (A)100u I(TRM) Max. (A)1.5§ @ t(w) (s) (Test Condition) I(TSM) Max. (A)15 V(R) Max. (V)120 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.0 @I(T) (A) (Test Condition)750m
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UF100A
Current50m
StyleTO-204AAvar
NumberTY00200003
shockley diode
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p channel depletion mosfet
Abstract: list of n channel fet P-Channel Depletion Mode FET shockley diode Depletion MOSFET 6D n channel depletion MOSFET list of n channel MOSFET P-Channel Depletion Mode Field Effect Transistor depletion p mosfet P-Channel Depletion Mosfets
Text: AN101 An Introduction to FETs Introduction The basic principle of the field-effect transistor FET has been known since J. E. Lilienfeld’s patent of 1925. The theoretical description of a FET made by Shockley in 1952 paved the way for development of a classic electronic device which provides the designer the means to accomplish nearly every circuit function. At one time, the
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AN101
p channel depletion mosfet
list of n channel fet
P-Channel Depletion Mode FET
shockley diode
Depletion MOSFET 6D
n channel depletion MOSFET
list of n channel MOSFET
P-Channel Depletion Mode Field Effect Transistor
depletion p mosfet
P-Channel Depletion Mosfets
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Untitled
Abstract: No abstract text available
Text: 460 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)480 V(BO) Max. (V)720 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)360 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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shockley diode
Abstract: diode shockley shockley 1n3842 shockley diode 1N3842 IN3831
Text: MICROWAVE DIODE CORPORATION , , «3831 IN3846 • h -, SILICON PLANAR THYRISTOR DIODES lOOO Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA. u PACKAGE OUTLINE ELECTRI CAL PA RA M ETERS Type Switching Voltage Vg V Holding Cutrent IH (mA)
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IN3831
IN3846
IN3832
IK3833
IN3834
IK3835
IN3836
IN3837
IN3838
shockley diode
diode shockley
shockley
1n3842
shockley diode 1N3842
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Untitled
Abstract: No abstract text available
Text: 1N3845 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)46 V(BO) Max. (V)54 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A)10 V(R) Max. (V)30 I(H) Max. (A) Holding Current50m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3845
Current50m
StyleDO-204AA
NumberTY00200003
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Untitled
Abstract: No abstract text available
Text: 430 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)240 V(BO) Max. (V)360 I(S) Max. (A)500u I(TRM) Max. (A) @ t(w) (s) (Test Condition) I(TSM) Max. (A)50 V(R) Max. (V)180 I(H) Max. (A) Holding Current500u V(TM) Max. (V)2.0 @I(T) (A) (Test Condition)1.0
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shockley diode
Abstract: shockley diode shockley four layer diode shockley diode datasheet Thyristor Shockley curve tracer IN3831 Thyristor diodes IN3833
Text: www.DataSheet.in M IC R O W A V E D IO D E C O R P O R A T IO N THROUGH SILICON PLANAR THYRISTOR DIODES 1.000 IMH 025 0 535B Also known as Four Layer Diodes and Shockley Diodes Switching Voltage 20 to 100 volts Holding current .5 to 45 mA, PACKAGE OUTLINE
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M3831
N3846
IN3831
IN3832
IN3833
IN3834
IN3835
IN3836
IN3837
IN3838
shockley diode
shockley
diode shockley
four layer diode
shockley diode datasheet
Thyristor Shockley
curve tracer
Thyristor diodes
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shockley diode
Abstract: No abstract text available
Text: 1N3838 Thyristors Four-Layer Shockley Diode V(BO) Min. (V)90 V(BO) Max. (V)110 I(S) Max. (A)125u I(TRM) Max. (A)10 @ t(w) (s) (Test Condition)10u I(TSM) Max. (A) V(R) Max. (V)60 I(H) Max. (A) Holding Current15m V(TM) Max. (V)1.2 @I(T) (A) (Test Condition)100m
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1N3838
Current15m
StyleDO-204AA
NumberTY00200003
shockley diode
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shockley diode
Abstract: shockley shockley diode application diode shockley shockley diode datasheet electrical bell working principle transistor a 1941 Electron Research Germanium rectifier nj TRANSISTOR
Text: Bell Labs celebrates 50 years of the Transistor The Invention Team Dr. John Bardeen, Dr. Walter Brattain, and Dr. William Shockley discovered the transistor effect and developed the first device in December, 1947, while the three were members of the technical staff at Bell Laboratories in Murray Hill, NJ. They were awarded
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